Microsemi APT60GL120JU3 Isotop buck chopper trench field stop igbt4 power module Datasheet

APT60GL120JU3
ISOTOP® Buck chopper
Trench + Field Stop IGBT4
Power module
Application
• AC and DC motor control
• Switched Mode Power Supplies
C
G
E
A
A
E
G
VCES = 1200V
IC = 60A @ Tc = 80°C
C
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• ISOTOP® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
ISOTOP®
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
TC = 25°C
Max ratings
1200
80
60
100
±20
280
Tj = 150°C
100A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Reverse Bias Safe Operating Area
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APT60GL120JU3 – Rev 0 July, 2009
Symbol
VCES
APT60GL120JU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE = 15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 1.6mA
VGE = 20V, VCE = 0V
Typ
5.0
1.85
2.25
5.8
Min
Typ
Max
Unit
250
2.25
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE= ±15V ; VCE=600V
IC=50A
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 50A
RG = 8.2Ω
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 50A
RG = 8.2Ω
TJ = 25°C
VGE = ±15V
VCE = 600V
TJ = 150°C
IC = 50A
TJ = 25°C
RG = 8.2Ω
TJ = 150°C
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
2770
205
160
pF
0.38
µC
130
20
300
45
ns
150
35
ns
350
80
3.8
5.5
2.5
4.5
mJ
200
A
mJ
Chopper diode ratings and characteristics
IRM
IF
VF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 800V
di/dt =200A/µs
Min
1200
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
100
500
Tj = 125°C
30
2.6
3.2
1.8
Tj = 25°C
300
Tj = 125°C
Tj = 25°C
Tj = 125°C
380
360
1700
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Max
Unit
V
µA
A
3.1
V
ns
nC
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APT60GL120JU3 – Rev 0 July, 2009
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APT60GL120JU3
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Typ
IGBT
Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
Max
0.53
1.2
20
Unit
°C/W
V
175
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
Anode
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Emitter
Gate
Dimensions in Millimeters and (Inches)
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3-5
APT60GL120JU3 – Rev 0 July, 2009
ISOTOP® is a registered trademark of ST Microelectronics NV
APT60GL120JU3
Typical Performance Curve
Output Characteristics (VGE=15V)
100
Output Characteristics
100
TJ = 150°C
80
TJ=25°C
60
VGE=19V
60
TJ=150°C
IC (A)
IC (A)
80
40
20
VGE=15V
40
VGE=9V
20
0
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
100
VCE = 600V
VGE = 15V
RG = 8.2 Ω
TJ = 150°C
60
12
E (mJ)
IC (A)
TJ=25°C
16
40
3
4
Eon
8
Eoff
TJ=150°C
4
0
0
5
6
7
8
9
10
11
12
0
13
20
40
60
80
100
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
12
120
100
10
VCE = 600V
VGE =15V
IC = 50A
TJ = 150°C
8
6
80
IC (A)
Eon
E (mJ)
2
VCE (V)
Energy losses vs Collector Current
20
80
20
1
Eoff
60
40
4
VGE=15V
TJ=150°C
RG=8.2 Ω
20
2
0
0
10
20
30
Gate Resistance (ohms)
40
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
IGBT
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APT60GL120JU3 – Rev 0 July, 2009
Thermal Impedance (°C/W)
0.6
APT60GL120JU3
Forward Characteristic of diode
80
VCE=600V
D=50%
RG=8.2 Ω
TJ=150°C
Tc=75°C
ZCS
100
75
50
IF, Forward Current (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
125
ZVS
25
Hard
switching
60
TJ=125°C
TJ=25°C
40
20
0
0
10
20
30
40
50
60
70
80
0
90
IC (A)
0.5
1
1.5
2
2.5
3
3.5
4
VF, Anode to Cathode Voltage (V)
Thermal Impedance (°C/W)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.8
0.9
DIODE
0.7
0.6
0.4
0.2
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APT60GL120JU3 – Rev 0 July, 2009
Rectangular Pulse Duration in Seconds
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