Eudyna FRM5W231KT Ingaas-apd/preamp receiver Datasheet

InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
FEATURES
KT
• Data rate up to 2.5Gb/s
• -32dBm typ. sensitivity
• 30µm active area APD
chip with GaAs preamplifier
• Small co-axial package
with single mode fiber
APPLICATIONS
• High bit rate long haul optical transmission systems operating
at 2.5Gb/s
LT
DESCRIPTION
These APD preamplifiers use an InGaAs APD chip with
GaAs IC preamplifier. The KT package is designed for a horizontal
PC board mount. The LT package is secured by a vertical flange.
Each package is connected with single mode fiber by Nd: YAG
welding. The detector preamplifier is DC coupled and has a
low electrical output when the APD is illuminated.
Edition 1.0
March 1999
1
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Storage Temperature
Tstg
-40 to +85
°C
Operating Temperature
Top
-40 to +85
°C
Supply Voltage
Vss
-7 to 0
V
APD Reverse Voltage
VR (Note 1)
0 to VB
V
APD Reverse Current
IR (Note 2)
0.6
mA
OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, Vss=-5.2V, unless
otherwise specified)
Symbol
Test Conditions
APD Responsivity
R15
R13
1,550nm, M=1
1,310nm, M=1
Min.
0.80
0.75
APD Breakdown Voltage
VB
ID=10µA
40
Temperature Coefficient of VB
γ
Note 3
AC Transimpedance
Zt
Parameter
Bandwidth
Equivalent Input
Noise Current Density
Sensitivity
Maximum Overload
Limits
Typ.
0.85
0.85
Unit
Max.
-
A/W
A/W
50
65
V
0.08
0.12
0.15
V/°C
AC-Coupled, f=100MHz,
RL=50Ω,
Pin <-20dBm,
400
600
-
Ω
BW
AC-Coupled, RL=50Ω,
M=3 to 15,
-3dBm from 1MHz
1.8
2.0
-
GHz
in
AC-Coupled, RL=50Ω,
Average within BW
-
6.5
8
-
-32
-31
dBm
Pr
2.488Gb/s NRZ,
PRBS=223-1,
B.E.R.=10-10,
VR is set at
optimum value
Tc=-40 to +85°C
-
-31
-30
dBm
2.488Gb/s NRZ, M=3,
PRBS=223-1,
B.E.R.=10-10,
VR is set at
optimum value
Tc=-40 to +85°C,
M=3
-5
-
-
dBm
-7
-
-
dBm
Po
pA/
Hz
Power Supply Current
Iss
-
-
-
40
mA
Power Supply Voltage
Vss
-
-5.46
-5.2
-4.94
V
Note: (1) VB differs from device to device. VB data is attached to each devices.
(2) CW condition
(3) γ=dVB/dTC
Edition 1.0
March 1999
2
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
Fig. 2 Relative Frequency Response
Fig. 1 Output Characteristics
0.7
0.3
Relative Response (3dB/div)
Output Voltage Peak to Peak, Vpp(mV)
Tc = 25°C
Vss=-5.2V
0.6 AC-Coupled
RL=50Ω
0.5 100Mb/s
Duty 50%
Mark density 50%
0.4
Zt ~ 600Ω
0.2
M=10
M=5
Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
Pin=-30dBm
λ = 1,310/1,550nm
0
0.1
0
3.0
1.5
Frequency, f (GHz)
0
0.1
0.2
0.3
0.4
0.5
0.6
Average Photocurrent, Ip.ave (mA)
Fig.4 Eye Diagram with a 1,550nm,
2.5Gb/s NRZ, 223-1 PRBS incident signal
Input optical wave form with Bessel filter
Fig.3 Equivalent Input Noise Current Density
Equivalent Input Noise Current Density,
in (pA/sqr. Hz)
M=15
10
5
Equivalent output wave form at
Pin=-32dBm, Tc=25°C, M=optimum
Tc = 25°C
Vss=-5.2V
AC-Coupled
RL=50Ω
0
0
2.0
1.0
Frequency, f (GHz)
100ps/div
Edition 1.0
March 1999
3
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
Fig.5 Bit Error Rate
λ=1,310/1,550nm
2.5Gb/s, NRZ
Vss=-5.2V
M=Optimum
Duty 50%
Mark Density 50%
Bit Error Rate
10-4
10-6
Tc=+25°C
+85°C
10-8
-40°C
10-10
10-12
-40
-35
-30
-25
Received Optical Power (dBm)
“KT” PACKAGE
UNIT: mm
GND
2-C1.5
2.0±0.1
VR
2.5±0.1
VSS
Ø0.9±0.1
Ø7.2 MAX
Ø6.0 MAX
4-Ø0.45±0.05
P.C.D. 4.0±0.2
P.C.D. 2.0±0.2
8.4±0.2
14.0±0.15
17.0±0.2
VR
OUT
GND
4.4 MAX
32.0 MAX
10.0 MIN
4.2±0.2
1000 MIN
VSS
8.4±0.2
OUT
“LT” PACKAGE
UNIT: mm
GND
VR
VR
7.6 MAX
Ø0.9
Ø6.0 MAX
1.0±0.1
VSS
OUT
Ø7.2 MAX
4-Ø0.45±0.05
2.5±0.1
P.C.D. 2.0±0.2
OUT
P.C.D. 4.0±0.2
14.0±0.15
17.0±0.2
VSS
GND
10.0 MIN
32.0 MAX
1000 MIN
Edition 1.0
March 1999
4
InGaAs-APD/Preamp
Receiver
FRM5W231KT/LT
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FME, QDD
Fujitsu Microelectronics Europe GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division
Global Sales Support Department
Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku,
Shinjuku-ku, Tokyo, 163-0721, Japan
TEL: +81-3-5322-3356
FAX: +81-3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0200M200
Edition 1.0
March 1999
5
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