MCC )HDWXUHV • • • MJ413 MJ423 MJ431 omponents 21201 Itasca Street Chatsworth !"# $ % !"# 10 Amp NPN Silicon Power Transistors 125W High Collector-Emitter Voltage VCES=400V DC Current Gain Specified 3.5A High Frequency Response to 2.5 MHz 0D[LPXP5DWLQJV • • • TO-3 Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance: 1.0 /W junction to case : A N E C Characteristic Symbol Max Unit Collector-Emitter Voltage VCEX 400 Vdc Collector-Base Voltage VCB 400 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current-Continuous IC 10 Adc Base Current IB 2.0 Adc PD 125 1.0 Watts W/ K D U : Total Device Dissipation @TC=25 Derate above 25 : V L H 2 1 : G B Q PIN 1. PIN 2. CASE. Figure 1 - Power Derating Curve BASE EMITTER COLLECTOR PD – Power Dissipation(W) DIMENSIONS INCHES DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 150 50 100 Temperature °C Power Dissipation (W) - Versus - Temperature °C 0 www.mccsemi.com MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE ∅ MCC MJ413, MJ423 & MJ431 (OHFWULFDO &KDUDFWHULVWLFV # °& 8QOHVV 2WKHUZLVH 6SHFLILHG Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) (IC=100mA, IB=0) Collector Cutoff Current MJ413 MJ423 (VCE=400V, VEB(off)=1.5V) MJ431 MJ413 MJ423 (VCE=400V, VEB(off)=1.5V, TC=125 ) MJ431 Emitter Cutoff Current MJ413 MJ423 (VBE=5.0Vdc, IC=0) MJ431 ON CHARACTERISTICS DC Current Gain MJ413 (IC=0.5A, VCE=5.0V) (IC=1.0A, VCE=5.0V) MJ423 (IC=1.0A, VCE=5.0V) (IC=2.5A, VCE=5.0V) MJ431 (IC=2.5A, VCE=5.0V) (IC=3.0A, VCE=5.0V) Collector-Emitter Saturation Voltage MJ413 (IC=0.5A, IB=0.05A) MJ423 (IC=1.0A, IB=0.1A) MJ431 (IC=2.5A, IB=0.5A) Base-Emitter Saturation Voltage MJ413 (IC=0.5A, IB=0.05A) MJ423 (IC=1.0A, IB=0.1A) MJ431 (IC=2.5A, IB=0.5A) DYNAMIC CHARACTERISTICS Current Gain – Bandwidth Product (IC=200mA, VCE=10V, f=1.0MHz) (1) Pulse Test: Pulse Width V 'XW\ &\FOH : Symbol Min Max Unit VCEO(sus) 325 --- Vdc ICEX mAdc 0.25 2.5 0.5 5.0 IEBO mAdc 5.0 2.0 hFE 20 15 30 10 15 10 80 90 35 VCE(sat) Vdc 0.6 0.8 0.7 VBE(sat) Vdc 1.25 1.25 1.50 fT 2.0% MHz 2.5 www.mccsemi.com