ON MMBT3904WT1 General purpose amplifier transistors surface mount Datasheet

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MMBT3904WT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN and PNP Silicon
These transistors are designed for general purpose amplifier applications. They are
housed in the SOT–323/SC–70 which is designed for low power surface mount
applications.
MAXIMUM RATINGS
Symbol
Value
Unit
Collector – Emitter Voltage
Rating
MMBT3904WT1
MMBT3906WT1
VCEO
40
–40
Vdc
Collector – Base Voltage
MMBT3904WT1
MMBT3906WT1
VCBO
60
–40
Vdc
Emitter – Base Voltage
MMBT3904WT1
MMBT3906WT1
VEBO
6.0
–5.0
Vdc
IC
200
–200
mAdc
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
3
Collector Current — Continuous MMBT3904WT1
MMBT3906WT1
1
THERMAL CHARACTERISTICS
2
Characteristic
Total Device Dissipation(1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
– 55 to +150
°C
CASE 419–02, STYLE 3
SOT–323/SC–70
DEVICE MARKING
MMBT3904WT1 = AM
MMBT3906WT1 = 2A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Max
40
–40
—
—
60
–40
—
—
6.0
–5.0
—
—
—
—
50
–50
—
—
50
–50
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
(IC = –1.0 mAdc, IB = 0)
MMBT3904WT1
MMBT3906WT1
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = –10 mAdc, IE = 0)
MMBT3904WT1
MMBT3906WT1
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = –10 mAdc, IC = 0)
MMBT3904WT1
MMBT3906WT1
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MMBT3904WT1
MMBT3906WT1
V(BR)CEO
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
IBL
nAdc
ICEX
nAdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
300 ms; Duty Cycle
2.0%.
v
v
Thermal Clad is a trademark of the Bergquist Company.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
MMBT3904WT1
40
70
100
60
30
—
—
300
—
—
MMBT3906WT1
60
80
100
60
30
—
—
300
—
—
MMBT3904WT1
—
—
0.2
0.3
MMBT3906WT1
—
—
–0.25
–0.4
MMBT3904WT1
0.65
—
0.85
0.95
MMBT3906WT1
–0.65
—
–0.85
–0.95
300
250
—
—
—
—
4.0
4.5
—
—
8.0
10.0
1.0
2.0
10
12
0.5
0.1
8.0
10
100
100
400
400
1.0
3.0
40
60
—
—
5.0
4.0
Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
hFE
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
—
VCE(sat)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Vdc
VBE(sat)
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
MMBT3904WT1
MMBT3906WT1
fT
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT3904WT1
MMBT3906WT1
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)
(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz)
MMBT3904WT1
MMBT3906WT1
MHz
Cobo
pF
Cibo
pF
kΩ
hie
X 10– 4
hre
hfe
—
mmhos
hoe
NF
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc)
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
MMBT3904WT1
MMBT3906WT1
td
—
—
35
35
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
(IC = –10 mAdc, IB1 = –1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
tr
—
—
35
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
(VCC = –3.0 Vdc, IC = –10 mAdc)
MMBT3904WT1
MMBT3906WT1
ts
—
—
200
225
Fall Time
(IB1 = IB2 = 1.0 mAdc)
(IB1 = IB2 = –1.0 mAdc)
MMBT3904WT1
MMBT3906WT1
tf
—
—
50
75
2. Pulse Test: Pulse Width
2
v 300 ms, Duty Cycle v 2.0%.
ns
ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3904WT1
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 < t1 < 500 ms
t1
DUTY CYCLE = 2%
275
+3 V
+10.9 V
275
10 k
10 k
0
– 0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
– 9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
5000
10
MMBT3904WT1
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
MMBT3904WT1
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
100
70
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
3
MMBT3904WT1
500
500
IC/IB = 10
200
100
70
50
tr @ VCC = 3.0 V
30
20
40 V
10
7
5
15 V
MMBT3904WT1
td @ VOB = 0 V
1.0
5.0 7.0 10
2.0 3.0
20
50 70 100
30
100
70
50
30
20
10
7
5
2.0 V
200
MMBT3904WT1
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
Figure 6. Rise Time
200
500
500
300
200
IC/IB = 20
t′s = ts – 1/8 tf
IB1 = IB2
IC/IB = 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
100
70
50
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
VCC = 40 V
IC/IB = 10
300
t r, RISE TIME (ns)
TIME (ns)
300
200
IC/IB = 20
IC/IB = 10
30
20
10
7
5
2.0 3.0
IC/IB = 10
30
20
10
7
5
MMBT3904WT1
1.0
100
70
50
5.0 7.0 10
20
50 70 100
30
200
MMBT3904WT1
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
2
0
0.1
4
SOURCE RESISTANCE = 500 W
IC = 100 mA
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
10
NF, NOISE FIGURE (dB)
14
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
MMBT3904WT1
4.0
10
20
40
MMBT3904WT1
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9. Noise Figure
Figure 10. Noise Figure
40
Motorola Small–Signal Transistors, FETs and Diodes Device Data
100
MMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
300
hoe, OUTPUT ADMITTANCE (m mhos)
100
MMBT3904WT1
h fe , CURRENT GAIN
200
100
70
50
MMBT3904WT1
50
20
10
5
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
20
10
5.0
10
10
10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
h ie , INPUT IMPEDANCE (k OHMS)
5.0
Figure 12. Output Admittance
Figure 11. Current Gain
MMBT3904WT1
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
7.0
MMBT3904WT1
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
Figure 13. Input Impedance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
5
MMBT3904WT1
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
MMBT3904WT1
+25°C
1.0
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
MMBT3904WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.2
0.1
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
MMBT3904WT1
MMBT3904WT1
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
– 55°C TO +25°C
– 0.5
– 55°C TO +25°C
– 1.0
+25°C TO +125°C
qVB FOR VBE(sat)
– 1.5
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
1.0
6
2.0
5.0
10
20
50
100
200
– 2.0
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
180 200
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBT3906WT1
3V
3V
< 1 ns
+ 9.1 V
275
275
< 1 ns
10 k
10 k
0
CS < 4 pF*
+10.6 V
300 ns
10 < t1 < 500 ms
DUTY CYCLE = 2%
DUTY CYCLE = 2%
CS < 4 pF*
1N916
t1
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
MMBT3906WT1
5.0
MMBT3906WT1
VCC = 40 V
IC/IB = 10
3000
2000
QT
Cobo
Q, CHARGE (pC)
CAPACITANCE (pF)
7.0
Cibo
3.0
2.0
1000
700
500
300
200
QA
100
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
70
50
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 21. Capacitance
Figure 22. Charge Data
200
500
500
300
200
IC/IB = 10
MMBT3906WT1
MMBT3906WT1
300
200
VCC = 40 V
IB1 = IB2
t f , FALL TIME (ns)
IC/IB = 20
TIME (ns)
100
70
50
tr @ VCC = 3.0 V
30
20
10
7
5
15 V
40 V
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 23. Turn – On Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
100
70
50
IC/IB = 10
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
Figure 24. Fall Time
7
MMBT3906WT1
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = –5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
4.0
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
1.0
0
0.1
0.2
0.4
IC = 1.0 mA
10
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
IC = 0.5 mA
8.0
6.0
4.0
IC = 50 mA
2.0
IC = 100 mA
MMBT3906WT1
1.0 2.0 4.0
10
f, FREQUENCY (kHz)
20
MMBT3906WT1
40
0
0.1
100
0.2
0.4
Figure 25.
1.0 2.0
4.0
10
20
RS, SOURCE RESISTANCE (kΩ)
40
100
Figure 26.
h PARAMETERS
(VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE (m mhos)
300
MMBT3906WT1
hfe , CURRENT GAIN
200
100
70
50
70
MMBT3906WT1
50
30
20
10
7.0
5.0
30
0.1
0.2
0.5 0.7 1.0
2.0 3.0
0.3
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
Figure 27. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
MMBT3906WT1
h ie , INPUT IMPEDANCE (k Ω)
10
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 29. Input Impedance
8
5.0 7.0
Figure 28. Output Admittance
20
0.3
0.2
0.5 0.7 1.0
2.0 3.0
0.3
IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
MMBT3906WT1
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0
Figure 30. Voltage Feedback Ratio
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
MMBT3906WT1
STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
– 55°C
0.5
0.3
MMBT3906WT1
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 31. DC Current Gain
1.0
TJ = 25°C
MMBT3906WT1
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
VBE(sat) @ IC/IB = 10
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
VBE @ VCE = 1.0 V
0.6
MMBT3906WT1
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1.0
2.0
50
5.0 10
20
IC, COLLECTOR CURRENT (mA)
100
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 32. Collector Saturation Region
200
Figure 33. “ON” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
0.5
qVC FOR VCE(sat)
+25°C TO +125°C
– 55°C TO +25°C
0
–0.5
MMBT3906WT1
+25°C TO +125°C
–1.0
qVS FOR VBE(sat)
– 55°C TO +25°C
–1.5
–2.0
0
20
40
60
80 100 120 140 160
IC, COLLECTOR CURRENT (mA)
180 200
Figure 34. Temperature Coefficients
9
INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SOT–323/SC–70
SOT–323/SC–70 POWER DISSIPATION
The power dissipation of the SOT–323/SC–70 is a function
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, RθJA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA . Using the
values provided on the data sheet for the SOT–323/SC–70
package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SOT–323/SC–70 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–323/SC–70
package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal
Clad. Using a board material such as Thermal Clad, an
aluminum core board, the power dissipation can be doubled
using the same footprint.
10
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
1
2
D
V
G
C
0.05 (0.002)
R N
J
DIM
A
B
C
D
G
H
J
K
L
N
R
S
V
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.035
0.049
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.031
0.039
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.90
1.25
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
0.80
1.00
2.00
2.20
0.30
0.40
K
H
CASE 419–02
ISSUE G
SOT–323/SC–70
Motorola Small–Signal Transistors, FETs and Diodes Device Data
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
11
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12
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Motorola Small–Signal Transistors, FETs and Diodes MMBT3904WT1/D
Device Data
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