Fairchild J212 N-channel rf amplifier Datasheet

G
S
G
S
TO-92
SOT-23
D
Mark: 62V / 62W / 62X
D
NOTE: Source & Drain
are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
25
V
VDG
Drain-Gate Voltage
VGS
Gate-Source Voltage
- 25
V
IGF
Forward Gate Current
10
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Max
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
J210-212
350
2.8
125
*MMBFJ210-212
225
1.8
357
556
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
J210/J211/J212/MMBFJ210/J211/J212, Rev A
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
MMBFJ210
MMBFJ211
MMBFJ212
J210
J211
J212
5
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
- 100
pA
OFF CHARACTERISTICS
V (BR)GSS
Gate-Source Breakdown Voltage
IG S S
Gate Reverse Current
I G = 1.0 µA, V DS = 0
V G S = 15 V, V D S = 0
V GS(off)
Gate-Source Cutoff Voltage
V D S = 15 V, I D = 1.0 nA
210
211
212
-1.0
- 2.5
- 4.0
-3.0
- 4.5
- 6.0
V
V
V
V DS = 15 V, V GS = 0
210
211
212
2.0
7.0
15
15
20
40
mA
mA
mA
4000
6000
7000
12,000
12,000
12,000
200
µmhos
µmhos
µmhos
µmhos
- 25
V
ON CHARACTERISTICS
ID S S
Zero-Gate Voltage Drain Current*
SMALL SIGNAL CHARACTERISTICS
g fs
g oss
Common Source Forward
Transconductance
Common Source Output
Conductance
V D S = 15 V, V G S = 0, f = 1.0 kHz
210
211
212
V D S = 15 V, V G S = 0, f = 1.0 kHz
*Pulse Test: Pulse Width ≤ 300 µS
Typical Characteristics
Parameter Interactions
Common Drain-Source
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
N-Channel RF Amplifier
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Transfer Characteristics
Leakage Current vs. Voltage
Noise Voltage vs. Frequency
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
N-Channel RF Amplifier
5
Transconductance vs.
Drain Current
Output Conductance
vs. Drain Current
(continued)
Typical Characteristics
(continued)
Capacitance vs. Voltage
Input Admittance
Output Admittance
os)
Common Source Characteristics
Forward Transadmittance
Reverse Transadmittance
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
N-Channel RF Amplifier
(continued)
Common Gate Characteristics
Input Admittance
Output Admittance
Forward Transadmittance
Reverse Transadmittance
J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212
N-Channel RF Amplifier
5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET 
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
Similar pages