SeCoS BD13003B Npn plastic encapsulated transistor Datasheet

BD13003B
1.5A , 700V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES

TO-126
Power Switching Applications
CLASSIFICATION OF ts
Product-Rank
BD3DD13003-A1
BD3DD13003-A2
Range
2-2.5 (μs)
2.5-3 (μs)
A
B
E
F
Product-Rank
BD3DD13003-B1
BD3DD13003-B2
Range
3-3.5 (μs)
3.5-4 (μs)
C
L
K
N
H
M
D
J
Collector
G

REF.
A
B
C
D
E
F
G

Base

Emitter
Millimeter
Min.
Max.
7.40
7.80
2.50
2.90
10.60
11.00
15.30
15.70
3.70
3.90
3.90
4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
1.10
1.50
0.45
0.60
0.66
0.86
2.10
2.30
1.17
1.37
3.00
3.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
Rating
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
1.5
150, -55~150
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
fT
700
400
9
20
5
5
-
V
V
V
mA
mA
mA
Fall time
tf
-
0.5
1
0.5
1
30
0.6
1.2
-
Storage time
tS
2
-
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
http://www.SeCoSGmbH.com/
14-Mar-2014 Rev. B
4
Test Conditions
V
V
MHz
IC=5mA, IE=0
IC=10mA, IB=0
IE=2mA, IC=0
VCB=700V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=0.5A
VCE=5V, IC=1.5A
IC=1A, IB=250mA
IC=1A, IB=250mA
VCE=10V, IC=100mA, f =1MHz
μs
IC=1A,IB1= -IB2=0.2A,VCC=100V
μs
IC=250mA (UI9600)
Any changes of specification will not be informed individually.
Page 1 of 2
BD13003B
Elektronische Bauelemente
1.5A , 700V
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
14-Mar-2014 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2
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