FJU1615 FJU1615 For Output Amplifier of Electronic Flash Unit • Low Collector-Emitter Saturation Voltage • High Performance at Low Supply Voltage 1 I-PACK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -30 Units V VCEO VEBO Collector-Emitter Voltage -20 V Emitter-Base Voltage -7 V IC Collector Current -10 A PC Collector Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=-100µA, IE=0 Min. -30 BVCEO Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 -20 BVEBO Emitter-Base Breakdown Voltage IC=-100µA, IC=0 -7 ICBO Collector Cut-off Current VCB=-20V, IE=0 Typ. Max. Units V V V -1.0 µA -1.0 µA IEBO Emitter Cut-off Current VEB=-7V, IC=0 hFE1 hFE2 DC Current Gain VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A VCE (sat) Collector-Emitter Saturation Voltage IC=-4A, IB=-0.05A -0.17 -0.25 V VBE (sat) Base-Emitter Saturation Voltage IC=-4A, IB=-0.05A -0.9 -1.2 V 200 160 600 fT Current Gain Band Width Product VCE=-5V, IC=-1.5A 180 MHz Cob Output Capacitance VCB=-10V, IE=0, f=1MHz 220 pF TON Turn On Time 80 ns TSTG Storage Time IC=-5A, IB1=-IB2=-0.125A RL=2Ω, VCC=-10V TF Fall Time 300 ns 60 ns * Pulse Test : PW ≤ 350µs,Duty Cycle ≤ 2% hFE1 Classification Classification L K hFE1 200 ~ 400 300 ~ 600 © 2001 Fairchild Semiconductor Corporation Rev. A. February 2001 FJU1615 Typical Characteristics -20 -15 VCE=-2V -15 IB =-50mA -10 IB=-20mA IB=-10mA -5 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IB=-100mA -0 -2 -4 -6 -8 -10 -12 -14 -16 Tc =125℃ 75℃ -10 25℃ -5 -0 -0.0 -18 -0.8 -1.2 VBE[V], BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Fig. 1 Static Characteristic Fig. 2 Transfer Characteristic -10 1000 Tc =125℃ 75℃ 25℃ VCE=-2.0V VCE(sat) [V], SATURATION VOLTAGE hFE, DC CURRENT GAIN -0.4 100 10 -0.1 -1 -10 -100 -1 IC/IB =80 -0.1 IC /IB=40 -0.01 -0.1 -1 -10 -100 IC [A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Fig. 3 DC Current Gain Fig. 4 Collector-Emitter Saturation Voltage IC/IB=80 VCB =-10V, IE=0 f=1MHz 500 Cob[pF], CAPACITANCE VBE(sat) [V], SATURATION VOLTAGE -10 -1 -0.1 400 300 200 100 -0.01 -0.1 0 -1 -10 IC[A], COLLECTOR CURRENT Fig. 5 Base-Emitter Saturation Voltage © 2001 Fairchild Semiconductor Corporation -100 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE Fig. 6 Output Capacitance Rev. A. February 2001 FJU1615 Typical Characteristics (Continued) 100 1.2 IC[A], COLLECTOR CURRENT PD[W], POWER DISSIPATION TC=25℃ 0.8 0.4 0.0 0 50 100 TC[℃], CASE TEMPERATURE Fig. 7 Power Derating © 2001 Fairchild Semiconductor Corporation 150 IC(Pulse) 10ms 1ms PW=100us 10 IC(DC) 1 0.1 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Fig. 8 Forward Bias Safe Operating Area Rev. A. February 2001 FJU1615 Package Dimensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters © 2001 Fairchild Semiconductor Corporation Rev. A. February 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ LILENT SWITCHER® SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ VCX™ UHC™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. © 2001 Fairchild Semiconductor Corporation Rev. G