ON ECH8501 Bipolar transistor (-)30v, (-)30a, low vce(sat) complementary dual ech8 Datasheet

Ordering number : ENA1581A
ECH8501
Bipolar Transistor
http://onsemi.com
(–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8
Features
•
•
•
• Mounting height 0.9mm
Composite type, facilitating high-density mounting
Low collector-to-emitter saturation voltage
NPN : VCE(sat)=0.075V(typ.)@IC=2.5A
PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A
Halogen free compliance
Specifications ( ): PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
(--30)40
V
(--)30
V
(--)6
V
(--)5
A
Collector Current (Pulse)
VEBO
IC
ICP
Base Current
IB
Collector Dissipation
Junction Temperature
PC
PT
Tj
Storage Temperature
Tstg
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Total Dissipation
PW≤1μs, duty cycle≤1%
(--)30
A
(--)600
mA
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
W
When mounted on ceramic substrate (900mm2×0.8mm)
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-007
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
Top View
ECH8501-TL-H
Packing Type : TL
0.25
2.9
0.15
8
5
MA
2.3
2.8
0 to 0.02
LOT No.
TL
4
1
0.65
Electrical Connection
0.3
1 : Emitter(NPN TR)
2 : Base(NPN TR)
3 : Emitter(PNP TR)
4 : Base(PNP TR)
5 : Collector(PNP TR)
6 : Collector(PNP TR)
7 : Collector(NPN TR)
8 : Collector(NPN TR)
0.07
0.9
0.25
Marking
Bottom View
8
7
6
5
1
2
3
4
ECH8
Semiconductor Components Industries, LLC, 2013
September, 2013
53012 TKIM/72110EA TKIM TC-00002441 No. A1581-1/8
ECH8501
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
ICBO
IEBO
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=(--)10V, f=1MHz
IC=(--)2.5A, IB=(--)125mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Ratings
min
typ
200
Unit
max
(--)0.1
μA
(--)0.1
μA
560
(260)280
MHz
(49)32
IC=(--)2.5A, IB=(--)125mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=∞
pF
(--100)75
(--170)110
(--)0.85
(--)1.2
(--30)40
V(BR)EBO
ton
IE=(--)10μA, IC=0A
tstg
tf
See specified Test Circuit.
mV
V
V
(--)30
V
(--)6
V
(37)30
ns
(147)220
ns
(14)12
ns
Note : The specifications shown above are for each individual transistor.
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
Vout
IB2
VR
RB
50Ω
RL
+
+
100μF
470μF
VBE= --5V
VCC=12V
IC=20IB1= --20IB2=2.5A
(For PNP, the polarity is reversed.)
Ordering Information
Device
ECH8501-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1581-2/8
ECH8501
--3.0
--10mA
--8mA
--6mA
--2.5
--2.0
--1.5
--4mA
--1.0
--2mA
--0.5
IB=0mA
--0.1
--0.2
--0.3
--0.4
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
3.5
A
30m
20m
A
m
40
10mA
3.0
2.5
8mA
2.0
6mA
1.5
4mA
1.0
2mA
IB=0mA
0
0
--0.5
0.1
0.2
0.3
0.5
0.4
Collector-to-Emitter Voltage, VCE -- V
IT15618
[PNP]
IC -- VBE
5
VCE= --2V
IT15619
[NPN]
VCE=2V
4
--1
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
1
0
--1.2
--25°C
2
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
IT15620
hFE -- IC
1000
3
25°C
25°C
--2
--25°C
--3
Ta=75°
C
Collector Current, IC -- A
--4
Ta=75°
C
Collector Current, IC -- A
--5
[PNP]
VCE= --0.5V
1.2
IT15621
hFE -- IC
1000
7
[NPN]
VCE=0.5V
7
DC Current Gain, hFE
Ta=75°C
5
DC Current Gain, hFE
4.0
A
[NPN]
0.5
0
0
0
70m
A 50m
A
--3.5
--20mA
4.5
Collector Current, IC -- A
mA --70
mA
--4.0
A
--30m
A
m
--40
IC -- VCE
5.0
mA
mA
0
--5
--1
00
Collector Current, IC -- A
--4.5
[PNP]
100
IC -- VCE
--5.0
25°C
3
--25°C
2
5
Ta=75°C
25°C
3
--25°C
2
100
100
7
5
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
hFE -- IC
1000
7
0.01
5 7 --10
IT15622
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
[PNP]
hFE -- IC
1000
VCE= --2V
7
5 7 10
IT15623
[NPN]
VCE=2V
7
Ta=75°C
5
DC Current Gain, hFE
DC Current Gain, hFE
2
25°C
3
--25°C
2
5
Ta=75°C
25°C
3
--25°C
2
100
7
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT15624
100
0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT15625
No. A1581-3/8
ECH8501
VCE(sat) -- IC
[PNP]
2
--100
7
5
°C
75
3
=
Ta
2
C
5°
--2
°C
25
--10
7
5
3
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
VCE(sat) -- IC
[PNP]
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
--100
7
5
C
5°
=7
Ta
3
2
C
5°
--2
C
°
25
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
VBE(sat) -- IC
[PNP]
=
Ta
2
°C
25
10
7
5
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT15679
Collector Current, IC -- A
VCE(sat) -- IC
[NPN]
IC / IB=50
2
100
7
5
°C
75
C
5°
--2
=
Ta
3
2
°C
25
2
--1.0
Ta= --25°C
7
25°C
5
75°C
3
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Output Capacitance, Cob -- pF
7
5
3
2
3
5
7
--10
2
Collector-to-Base Voltage, VCB -- V
3
5
IT15632
2
3
5 7 1.0
2
3
5 7 10
IT15680
VBE(sat) -- IC
[NPN]
IC / IB=20
1.0
Ta= --25°C
7
25°C
5
75°C
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT15631
Cob -- VCB
100
f=1MHz
100
5 7 0.1
Collector Current, IC -- A
[PNP]
2
3
2
2
0.01
5 7 --10
IT15630
Cob -- VCB
3
2
3
IC / IB=20
Collector Current, IC -- A
Output Capacitance, Cob -- pF
°C
75
C
5°
--2
3
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
--1.0
5
7
0.01
5 7 --10
IT15628
Collector Current, IC -- A
2
--0.01
7
10
--10
7
--0.01
100
3
IC / IB=50
[NPN]
IC / IB=20
2
3
0.01
5 7 --10
IT15678
Collector Current, IC -- A
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
VCE(sat) -- IC
3
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
[NPN]
f=1MHz
7
5
3
2
10
1.0
2
3
5
7
10
2
3
Collector-to-Base Voltage, VCB -- V
5
IT15633
No. A1581-4/8
ECH8501
f T -- IC
3
2
100
7
5
3
7
5
3
2
3
5 7 --0.1
3
5 7 --1.0
2
3
Collector Current, IC -- A
ASO
5
3
2
100
7
5
3
2
3
5 7 0.1
DC
10
ms
0m
s
s
IC=5A
1m
s
op
era
tio
n
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
3
5 7 1.0
2
PC -- Ta
1.8
3
5 7 10
IT15635
[PNP/NPN]
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
10
2
Collector Current, IC -- A
≤1μs
100μs
[NPN]
VCE=10V
2
0.01
5 7 --10
IT15634
[PNP/NPN]
ICP=30A
1.0
7
5
3
2
0.1
7
5
3
2
2
0μ
50
10
7
5
3
2
2
fT -- IC
7
Gain-Bandwidth Product, fT -- MHz
5
2
--0.01
Collector Current, IC -- A
[PNP]
VCE= --10V
Collector Dissipation, PC -- W
Gain-Bandwidth Product, f T -- MHz
7
1.4
1.3
1.2
To
t
al
1.0
Di
ss
ip
nit atio
1u
0.8
n
0.6
0.4
0.2
2 3
5 7 10
Collector-to-Emitter Voltage, VCE -- V
2 3
5
IT15636
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT15457
No. A1581-5/8
ECH8501
Embossed Taping Specification
ECH8501-TL-H
No. A1581-6/8
ECH8501
Outline Drawing
ECH8501-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1581-7/8
ECH8501
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PS No. A1581-8/8
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