Panasonic MA6S718 Schottky barrier diodes (sbd) Datasheet

Schottky Barrier Diodes (SBD)
MA6Z718 (MA6S718)
Silicon epitaxial planar type
Unit: mm
For switching
2.0±0.1
(0.65)(0.65)
4
1
2
3
1.25±0.1
2.1±0.1
■ Features
• Three isolated elements are contained in one package, allowing
high-density mounting
• Forward voltage VF , optimum for low voltage rectification
• Optimum for high frequency rectification because of its short
reverse recovery time trr
5˚
Rating
Unit
VR
30
V
Maximum peak reverse voltage
VRM
30
V
Peak forward current
IFM
150
mA
IF
30
mA
*
Forward current *
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1: Anode 1
2: Anode 2
3: Anode 3
EIAJ: SC-88
(0.15)
0 to 0.1
Symbol
Reverse voltage
0.16+0.10
–0.06
0.2±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter
0.7±0.1
(0.425)
5
5˚
6
4: Cathode 3
5: Cathode 2
6: Cathode 1
SMini6-F1 Package
Marking Symbol: M2N
Internal Connection
6
5
4
1
2
3
Note) *: Value for single diode
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
V
VF1
IF = 1 mA
0.4
VF2
IF = 30 mA
1.0
Reverse current
IR
VR = 30 V
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1.5
pF
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
η
VIN = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Forward voltage
Reverse recovery time
*
Detection efficiency
1
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
90%
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: April 2004
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00114BED
1
MA6Z718
IF  V F
103
IR  V R
VF  Ta
1.6
103
Reverse current IR (µA)
Forward current IF (mA)
102
−20°C
Ta = 125°C
10
1
Ta = 125°C
10
75°C
1
10–1
10−1
10–2
10−2
25°C
Forward voltage VF (V)
75°C 25°C
102
1.2
0.8
IF = 30 mA
0.4
3 mA
1 mA
0
0.4
0.8
1.2
0
Forward voltage VF (V)
IR  T a
20
25
30
10−1
120
160
IF(surge)  tW
2.0
1.0
0
120
80
103
200
Forward surge current IF(surge) (A)
1
40
40
Ta = 25°C
VR = 30 V
10 V
1V
10
0
Ambient temperature Ta (°C)
Ct  VR
Terminal capacitance Ct (pF)
Reverse current IR (µA)
15
3.0
Ambient temperature Ta (°C)
2
10
Reverse voltage VR (V)
102
10−2
−40
5
0
−40
0
10
20
Reverse voltage VR (V)
SKH00114BED
30
IF(surge)
tW
102
10
1
10 −1
10 −1
1
10
Pulse width tW (ms)
200
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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