Infineon IDW75E60 600 v emcon technology Datasheet

IDW75E60
A
Features:
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175 °C junction operating temperature
• Easy paralleling
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
http://www.infineon.com/emcon/
C
PG-TO-247-3
Applications:
• Welding
• Motor drives
Type
VRRM
IF
VF,Tj=25°C
Tj,max
Marking
Package
IDW75E60
600V
75A
1.65V
175°C
D75E60
PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continuous forward current
IF
Value
600
V
A
TC = 25°C
120
TC = 90°C
82
TC = 100°C
75
Surge non repetitive forward current
Unit
IFSM
220
A
IFRM
225
A
TC = 25°C, tp = 10 ms, sine halfwave
Maximum repetitive forward current
TC = 25°C, tp limited by tj,max, D = 0.5
Ptot
Power dissipation
W
TC = 25°C
300
TC = 90°C
170
TC = 100°C
150
Operating junction and storage temperature
Tj, Tstg
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
TS
Power Semiconductors
1
-55…+175
°C
260
°C
Rev. 2.1 Nov 09
IDW75E60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.5
K/W
RthJA
40
Characteristic
Thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
T j = 25° C
-
1.65
2.0
T j = 17 5° C
-
1.65
-
T j = 25° C
-
-
40
T j = 17 5° C
-
-
1000
Unit
Static Characteristic
Collector-emitter breakdown voltage
VRRM
IR=0.25mA
Diode forward voltage
VF
I F = 75A
Reverse leakage current
IR
V
µA
V R = 6 00V
Dynamic Electrical Characteristics
Diode reverse recovery time
trr
T j = 25° C
-
121
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00V, I F = 7 5A ,
-
2.4
-
µC
Diode peak reverse recovery current
Irr
dI F / dt= 146 0A / µs
-
38.5
-
A
Diode peak rate of fall of reverse
recovery current during t b
dI r r / dt
-
921
-
A/µs
Diode reverse recovery time
trr
T j = 12 5° C
-
155
-
ns
Diode reverse recovery charge
Qrrm
V R = 4 00V, I F = 7 5A ,
-
4.4
-
µC
Diode peak reverse recovery current
Irr
dI F / dt= 146 0A / µs
-
46.6
-
A
Diode peak rate of fall of reverse
recovery current during t b
dI r r / dt
-
960
-
A/µs
Diode reverse recovery time
trr
T j = 17 5° C
-
182
-
ns
Diode reverse recovery charge
Qrrm
V R = 4 00V, I F = 7 5A ,
-
5.8
-
µC
Diode peak reverse recovery current
Irr
dI F / dt= 146 0A / µs
-
56.2
-
A
Diode peak rate of fall of reverse
recovery current during t b
dI r r / dt
-
1013
-
A/µs
Power Semiconductors
2
Rev. 2.1 Nov 09
IDW75E60
300W
120A
IF, FORWARD CURRENT
Ptot,
POWER DISSIPATION
250W
200W
150W
100W
90A
60A
30A
50W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 1. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
200A
IF=150A
2.0V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
125°C
TC, CASE TEMPERATURE
Figure 2. Diode forward current as a
function of case temperature
(Tj ≤ 175°C)
TJ=25°C
175°C
150A
100A
50A
0A
75°C
75A
1.5V
37.5A
1.0V
0.5V
0V
1V
0.0V
0°C
2V
VF, FORWARD VOLTAGE
Figure 3. Typical diode forward current as
a function of forward voltage
Power Semiconductors
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 4. Typical diode forward voltage as a
function of junction temperature
3
Rev. 2.1 Nov 09
IDW75E60
TJ=175°C
150ns
100ns
TJ=25°C
50ns
0ns
1000A/µs
5µC
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
200ns
4µC
3µC
2µC
T J=25°C
1µC
0µC
1000A/µs
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 5. Typical reverse recovery time as
a function of diode current slope
(VR=400V, IF=75A,
Dynamic test circuit in Figure E)
T J =175°C
T J =175°C
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 6. Typical reverse recovery charge
as a function of diode current
slope
(VR = 400V, IF = 75A,
Dynamic test circuit in Figure E)
-1200A/µs
T J=175°C
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr,
REVERSE RECOVERY CURRENT
60A
-1000A/µs
50A
40A
T J =25°C
30A
20A
10A
0A
1000A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 7. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 75A,
Dynamic test circuit in Figure E)
Power Semiconductors
-800A/µs
-600A/µs
-400A/µs
-200A/µs
0A/µs
1000A/µs
1500A/µs
T J=25°C
1500A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 8. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=400V, IF=75A,
Dynamic test circuit in Figure E)
4
Rev. 2.1 Nov 09
ZthJC, TRANSIENT THERMAL RESISTANCE
IDW75E60
D=0.5
-1
10 K/W
0.2
0.1
0.05
0.02
0.01
-2
10 K/W
single pulse
1µs
10µs
100µs
R,(K/W)
0.0556
0.1757
0.12374
0.12192
0.02305
R1
τ, (s)
0.1495
0.02797
3.623 E-3
3.276 E-4
2.635 E-5
R2
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 9. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
5
Rev. 2.1 Nov 09
IDW75E60
Power Semiconductors
6
Rev. 2.1 Nov 09
IDW75E60
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
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Power Semiconductors
7
Rev. 2.1 Nov 09
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