ON MJF15031G Complementary power transistor Datasheet

MJF15030 (NPN),
MJF15031 (PNP)
Complementary Power
Transistors
For Isolated Package Applications
Designed for general−purpose amplifier and switching applications,
where the mounting surface of the device is required to be electrically
isolated from the heatsink or chassis.
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS, 36 WATTS
Features
•
•
•
•
•
Electrically Similar to the Popular MJE15030 and MJE15031
No Isolating Washers Required, Reduced System Cost
High Current Gain−Bandwidth Product
UL Recognized, File #E69369, to 3500 VRMS Isolation
These Devices are Pb−Free and are RoHS Compliant*
NPN
PNP
COLLECTOR 2, 4
COLLECTOR 2, 4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
150
Vdc
Collector−Base Voltage
VCB
150
Vdc
Emitter−Base Voltage
VEB
5
Vdc
Collector−Emitter Voltage
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H. ≤ 30%, TA = 25_C)
Per Figure 11
Collector Current
− Continuous
Collector Current
− Peak
VISOL
1
BASE
EMITTER 3
EMITTER 3
VRMS
4500
IC
8
Adc
ICM
16
Adc
Base Current
IB
2
Adc
Total Power Dissipation (Note 2) @ TC = 25_C
Derate above 25_C
PD
36
0.286
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
TJ, Tstg
–65 to +150
_C
Operating and Storage Temperature Range
1
BASE
MARKING
DIAGRAM
1
2
TO−220 FULLPACK
CASE 221D
STYLE 2
3
MJF1503xG
AYWW
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
Characteristic
RqJA
62.5
_C/W
Thermal Resistance, Junction−to−Case (Note 2)
RqJC
3.5
_C/W
Lead Temperature for Soldering Purposes
TL
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
MJF1503x = Specific Device Code
x = 0 or 1
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 8
1
Package
Shipping
MJF15030G
TO−220 FULLPACK 50 Units/Rail
(Pb−Free)
MJF15031G
TO−220 FULLPACK
(Pb−Free)
50 Units/Rail
Publication Order Number:
MJF15030/D
MJF15030 (NPN), MJF15031 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Min
Max
Unit
VCEO(sus)
150
−
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
ICEO
−
10
mAdc
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
ICBO
−
10
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
−
10
mAdc
DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc)
(IC = 2 Adc, VCE = 2 Vdc)
(IC = 3 Adc, VCE = 2 Vdc)
(IC = 4 Adc, VCE = 2 Vdc)
hFE
40
40
40
20
−
−
−
−
−
DC Current Gain Linearity
(VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP)
hFE
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
ON CHARACTERISTICS (Note 3)
Typ
2
3
Collector−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.1 Adc)
VCE(sat)
−
0.5
Vdc
Base−Emitter On Voltage
(IC = 1 Adc, VCE = 2 Vdc)
VBE(on)
−
1
Vdc
fT
30
−
MHz
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 4)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. fT = ⎪hfe⎪• ftest.
1
0.5
0.3
0.2
SINGLE PULSE
RqJC(t) = r(t) RqJC
TJ(pk) - TC = P(pk) RqJC(t)
0.1
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (ms)
100
Figure 1. Thermal Response
http://onsemi.com
2
200 300
500
1K
2K 3K
5K
10K
MJF15030 (NPN), MJF15031 (PNP)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 2 and 3 is based on TJ(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
20
IC, COLLECTOR CURRENT (AMP)
10
100 ms
5
3
2
5 ms
dc
1
0.5
0.3
0.2
WIREBOND LIMIT
THERMAL LIMIT
SECONDARY BREAKDOWN
LIMIT @ TC = 25°C
0.1
0.05
0.03
0.02
3
2
50 70 100 150 200
5
7 10
20 30
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. Forward Bias Safe Operating Area
1000
Cib (NPN)
500
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (AMP)
8
5
3
VBE(off) = 9 V
IC/IB = 10
TC = 25°C
2
1
0
0
Cib (PNP)
200
100
Cob (PNP)
50
30
5V
3V
1.5 V
0V
100 110 120 130 140 150
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Cob (NPN)
20
10
1.5
3
hfe , SMALL-SIGNAL CURRENT GAIN
100
50
30
PNP
VCE = 10 V
IC = 0.5 A
TC = 25°C
20
NPN
10
5
0.5
0.7
1
2
3
5
7
100 150
Figure 4. Capacitances
f T, CURRENT GAIN — BANDWIDTH PRODUCT (MHz)
Figure 3. Reverse Bias Switching Safe
Operating Area
5 7 10
30
50
VR, REVERSE VOLTAGE (VOLTS)
10
100
90
(PNP)
60
(NPN)
50
20
10
0
0.1
0.2
0.5
1
2
5
f, FREQUENCY (MHz)
IC, COLLECTOR CURRENT (AMP)
Figure 5. Small−Signal Current Gain
Figure 6. Current Gain — Bandwidth Product
http://onsemi.com
3
10
MJF15030 (NPN), MJF15031 (PNP)
DC CURRENT GAIN
1K
1K
VCE = 2 V
500
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
500
TJ = 150°C
200
150
TJ = 25°C
100
70
50
TJ = -55°C
30
VCE = 2 V
TJ = 150°C
200
TJ = 25°C
100
TJ = -55°C
50
20
20
10
0.1
0.2
0.5
2
1
5
10
0.1
10
0.2
0.5
1
2
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 7a. MJF15030 NPN
5
10
Figure 7b. MJF15031 PNP
“ON” VOLTAGE
1.8
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
1
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2 V
1.4
1
0.8
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 20
0.4
VCE(sat) @ IC/IB = 20
0.2
0.1
0.2
0.5
VBE(sat) @ IC/IB = 20
IC/IB = 10
1
2
5
0
0.1
10
2
5
10
Figure 8b. MJF15031 PNP
1
10
VCC = 80 V
IC/IB = 10
TJ = 25°C
0.5
3
td (NPN, PNP)
0.2
tr (PNP)
0.1
VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25°C
5
t, TIME (s)
μ
t, TIME (s)
μ
1
IC, COLLECTOR CURRENT (AMP)
Figure 8a. MJF15030 NPN
0.05
2
ts (PNP)
1
0.5
tf (PNP)
tr (NPN)
0.03
0.2
0.02
0.01
0.1
0.5
0.2
IC, COLLECTOR CURRENT (AMP)
IC/IB = 10
0.2
0.5
1
2
5
0.1
0.1
10
IC, COLLECTOR CURRENT (AMP)
tf (NPN)
0.2
0.3
0.5
1
2
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turn−On Times
Figure 10. Turn−Off Times
http://onsemi.com
4
5
10
MJF15030 (NPN), MJF15031 (PNP)
TEST CONDITIONS FOR ISOLATION TESTS*
FULLY ISOLATED PACKAGE
LEADS
HEATSINK
0.110, MIN
Figure 11. Mounting Position
*Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
4-40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 12. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to
8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package
over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the
plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However,
in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
http://onsemi.com
5
MJF15030 (NPN), MJF15031 (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
Y
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJF15030/D
Similar pages