Fairchild BC556 Pnp epitaxial silicon transistor Datasheet

BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
•
•
•
•
Switching and Amplifier
High-Voltage: BC556, VCEO = -65 V
Low-Noise: BC559, BC560
Complement to BC546, BC547, BC548, BC549, and BC550
1
TO-92
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
BC556ABU
BC556A
TO-92 3L
Bulk
BC556ATA
BC556A
TO-92 3L
Ammo
BC556BTA
BC556B
TO-92 3L
Ammo
BC556BTF
BC556B
TO-92 3L
Tape and Reel
BC556BTFR
BC556B
TO-92 3L
Tape and Reel
BC557ATA
BC557A
TO-92 3L
Ammo
BC557BTA
BC557B
TO-92 3L
Ammo
BC557BTF
BC557B
TO-92 3L
Tape and Reel
BC558BTA
BC558B
TO-92 3L
Ammo
BC559BTA
BC559B
TO-92 3L
Ammo
BC559CTA
BC559C
TO-92 3L
Ammo
BC560CTA
BC560C
TO-92 3L
Ammo
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
1
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
April 2014
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Value
BC556
-80
BC557 / BC560
-50
BC558 / BC559
-30
BC556
-65
BC557 / BC560
-45
BC558 / BC559
-30
Unit
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-100
mA
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
°C
-65 to +150
°C
TSTG
Storage Temperature Range
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
-15
nA
ICBO
Collector Cut-Off Current
VCB = -30 V, IE = 0
hFE
DC Current Gain
VCE = -5 V, IC = -2 mA
VCE(sat)
Collector-Emitter Saturation
Voltage
IC = -10 mA, IB = -0.5 mA
-90
-300
IC = -100 mA, IB = -5 mA
-250
-650
VBE(sat)
Collector-Base Saturation Voltage
IC = -10 mA, IB = -0.5 mA
-700
IC = -100 mA, IB = -5 mA
-900
VBE(on)
Base-Emitter On Voltage
fT
Cob
NF
110
VCE = -5 V, IC = -2 mA
-600
-660
VCE = -5 V, IC = -10 mA
VCE = -5 V, IC = -10 mA,
f = 10 MHz
Output Capacitance
VCB = -10 V, IE = 0, f = 1 MHz
BC556 / BC557 / BC558 VCE = -5 V, IC = -200 μA,
f = 1 kHz, RG = 2 kΩ
BC559 / BC560
VCE = -5 V, IC = -200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz
BC559
BC560
-750
150
mV
MHz
6
2
mV
mV
-800
Current Gain Bandwidth Product
Noise
Figure
800
pF
10
1
4
1.2
4.0
1.2
2.0
dB
hFE Classification
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
2
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
1000
-50
IB = -350μA
-40
IB = -300μA
-35
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
VCE = -5V
IB = -400μA
-45
IB = -250μA
-30
IB = -200μA
-25
-20
IB = -150μA
-15
IB = -100μA
-10
100
10
IB = -50μA
-5
1
-0.1
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
VCE[V], COLLECTOR-EMITTER VOLTAGE
-100
IC = -10 IB
VCE = -5V
IC[mA], COLLECTOR CURRENT
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Figure 2. DC Current Gain
-10
VBE(sat)
-0.1
VCE(sat)
-0.01
-0.1
-10
-1
-0.1
-1
-10
-0.2
-100
-0.4
f=1MHz
IE = 0
1
-10
-100
-1.0
-1.2
1000
VCE = -5V
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
-0.8
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Cob(pF), CAPACITANCE
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
10
-0.6
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
-1
-100
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
-1
-10
Figure 6. Current Gain Bandwidth Product
www.fairchildsemi.com
3
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Physical Dimensions
TO-92 (Bulk)
D
Figure 7. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
4
BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor
Physical Dimensions (Continued)
TO-92 (Ammo, Tape and Reel)
Figure 8. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf.
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0
www.fairchildsemi.com
5
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Advance Information
Formative / In Design
Preliminary
First Production
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Full Production
Obsolete
Not In Production
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I68
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