LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation Common source configuration Lower noise floor Applications Broadband linear operation 500 MHz to 1400 MHz ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Source Voltage VGS 20 V Drain-Source Current IDS 0.7 A Power Dissipation PD 8 W Junction Temperature TJ 200 °C Storage Temperature TSTG -55 to +150 °C DIM MIN MAX MIN MAX θJC 21.8 °C/W A 20.70 20.96 .815 .825 B 14.35 14.61 .565 .575 C 13.72 14.22 .540 .560 D 6.27 6.53 .247 .257 E 6.22 6.48 .245 .255 F 6.22 6.48 .245 .255 G 1.14 1.40 .045 .055 H 2.92 3.18 .115 .125 J 1.40 1.65 .055 .065 K 1.96 2.46 .077 .097 L 3.61 4.37 .142 .172 M .08 .15 .003 .006 Thermal Resistance LETTER TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 500 10.0 - j41.5 40.0 +j53.0 1000 4.2 - j12.0 11.85 + j33.0 1400 3.5 - j1.0 7.5 + j23.3 VDD = 28V, IDQ = 25mA, POUT = 2.0 W ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. MILLIMETERS INCHES ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Max Units BVDSS 65 - V VGS = 0.0 V , IDS = 1.0 mA Drain-Source Leakage Current IDSS - 0.5 mA VGS = 28.0 V , VGS = 0.0 V Gate-Source Leakage Current IGSS - 0.5 µA VGS = 20.0 V , VDS = 0.0 V VGS(TH) 2.0 6.0 V VDS = 10.0 V , IDS = 5.0 mA GM 40 - mS VDS = 28.0 V , IDS = 50.0 mA , Δ VGS = 1.0V, 80 μs Pulse Input Capacitance CISS - 3.5 pF VDS = 28.0 V , F = 1.0 MHz Output Capacitance COSS - 3.75 pF VDS = 28.0 V , F = 1.0 MHz Reverse Capacitance CRSS - 1.2 pF VDS = 28.0 V , F = 1.0 MHz Power Gain GP 10 - dB VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz Drain Efficiency ŋD 40 - % VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz VSWR-T - 20:1 - VDD = 28.0 V, IDQ = 25 mA, POUT = 2.0 W F =1.0 GHz Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Load Mismatch Tolerance Test Conditions 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant Typical Broadband Performance Curves CAPACITANCES VS VOLTAGE F =1.0MHz 3 4 POWER OUTPUT (W) CAPACITANCE (pF) 5 COSS 3 CISS 2 1 POWER OUTPUT VS VOLTAGE F =1.0GHz PIN=2.0 W IDQ=25 mA CRSS 2 1 0 0 5 10 15 20 25 5 30 10 GAIN VS FREQUENCY VDD=28 V IDQ=25.0 mA POUT=2.0 W EFFICIENCY (%) GAIN (dB) 25 30 35 10 5 1000 45 42 39 36 500 0 700 EFFICIENCY VS FREQUENCY VDD =28 V IDQ =25.0 mA Pout =2.0 W 48 15 500 20 VDS (V) VPS (v) 20 15 1400 750 1000 1250 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =25.0 mA POWER OUTPUT (W) 4 3 1000 MHz 500MHz 1400 MHz 2 1 0 0 0.05 0.1 0.2 0.3 0.4 0.5 POWER INPUT (W) 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. 1400 LF2802A RF Power MOSFET Transistor 2W, 500-1000MHz, 28V M/A-COM Products Released; RoHS Compliant TEST FIXTURE CIRCUIT DIMENSIONS TEST FIXTURE ASSEMBLY 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.