Central CMPD5001 Inductive load silicon switching diode Datasheet

CMPD5001
CMPD5001S
SURFACE MOUNT
HIGH CURRENT
INDUCTIVE LOAD
SILICON SWITCHING DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPD5001 series
types are silicon switching diodes manufactured by
the epitaxial planar process, designed for switching
applications requiring extremely high current capability.
SOT-23 CASE
The following configurations are available:
CMPD5001
CMPD5001S
SINGLE
DUAL, IN SERIES
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Repetitive Reverse Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MARKING CODE: DA2
MARKING CODE: D49
SYMBOL
VR
IF
IFRM
IRRM
IFSM
IFSM
PD
TJ, Tstg
ΘJA
120
400
800
600
6.0
1.5
350
-65 to +150
357
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=90V
100
nA
IR
100
μA
BVR
VR=90V, TA=150°C
IR=50μA
325
V
VF
IF=10mA
0.75
V
VF
IF=50mA
0.84
V
VF
IF=100mA
0.90
V
VF
IF=200mA
1.00
V
VF
IF=400mA
1.25
V
CT
VR=0, f=1.0MHz
35
pF
trr
IR=IF=30mA, Irr=3.0mA, RL=100Ω
IR=IF=10mA, Irr=3.0mA, RL=100Ω
60
ns
50
ns
trr
120
R4 (25-January 2010)
CMPD5001
CMPD5001S
SURFACE MOUNT
HIGH CURRENT
INDUCTIVE LOAD
SILICON SWITCHING DIODE
SOT-23 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMPD5001
CMPD5001S
LEAD CODE:
1) Anode
2) No Connection
3) Cathode
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: DA2
MARKING CODE: D49
R4 (25-January 2010)
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