ON MJE172 Power transistors complementary silicon Datasheet

 Order this document
by MJE171/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for low power audio amplifier and low current, high speed switching
applications.
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc — MJE171, MJE181
VCEO(sus) = 80 Vdc — MJE172, MJE182
• DC Current Gain —
hFE = 30 (Min) @ IC = 0.5 Adc
hFE = 12 (Min) @ IC = 1.5 Adc
• Current–Gain — Bandwidth Product —
fT = 50 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages —
ICBO = 100 nA (Max) @ Rated VCB
*Motorola Preferred Device
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3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
12.5 WATTS
MAXIMUM RATINGS
Rating
Symbol
Collector–Base Voltage
MJE171
MJE181
MJE172
MJE182
Unit
80
100
Vdc
60
80
Vdc
VCB
VCEO
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
Base Current
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
VEB
IC
7.0
Vdc
3.0
6.0
Adc
IB
PD
1.0
Adc
1.5
0.012
Watts
W/_C
PD
12.5
0.1
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
θJC
θJA
10
_C/W
83.4
_C/W
CASE 77–08
TO–225AA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PD, POWER DISSIPATION (WATTS)
TA TC
2.8 14
2.4
12
2.0
10
1.6 8.0
TC
1.2 6.0
0.8 4.0
TA
0.4 2.0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
—
—
—
—
—
—
0.1
0.1
0.1
0.1
—
0.1
50
30
12
250
—
—
—
—
—
0.3
0.9
1.7
—
—
1.5
2.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0)
VCEO(sus)
MJE171, MJE181
MJE172, MJE182
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0, TC = 150_C)
(VCB = 100 Vdc, IE = 0, TC = 150_C)
Vdc
µAdc
ICBO
MJE171, MJE181
MJE172, MJE182
MJE171, MJE181
MJE172, MJE182
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
mAdc
µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.5 Adc, VCE = 1.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.5 Adc, IB = 150 mAdc)
(IC = 3.0 Adc, IB = 600 mAdc)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 150 mAdc)
(IC = 3.0 Adc, IB = 600 mAdc)
VBE(sat)
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.2
Vdc
fT
50
—
MHz
—
—
60
40
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (1)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
pF
MJE171/MJE172
MJE181/MJE182
(1) fT = hfe• ftest.
VCC
+ 30 V
1K
RC
25 µs
SCOPE
RB
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
–4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
Figure 2. Switching Time Test Circuit
2
tr
100
0
t, TIME (ns)
+11 V
– 9.0 V
500
300
200
50
30
20
VCE = 30 V
IC/IB = 10
VBE(off) = 4.0 V
TJ = 25°C
td
10
5
3
2
NPN MJE181/182
PNP MJE171/172
1
1
2
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
IC, COLLECTOR CURRENT (AMPS)
3
5
Figure 3. Turn–On Time
Motorola Bipolar Power Transistor Device Data
10
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
θJC(t) = r(t) θJC
θJC = 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.05
0.1
0.07
0.05
0.02
0.01
0.03
0 (SINGLE PULSE)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
10
20
50
100
200
Figure 4. Thermal Response
ACTIVE–REGION SAFE OPERATING AREA
10
100 µs
500 µs
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
10
5.0
dc
5.0 ms
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
MJE171
MJE172
2.0 3.0
5.0
10
20 30
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5.0
100 µs
2.0
500 µs
1.0
5.0 ms
0.5
0.2
0.1
0.05
0.02
0.01
1.0
100
2.0 3.0
5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. MJE171, MJE172
Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of a
transistor — average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T J(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T J(pk)
150 _ C. T J(pk) may be calculated from the data in
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
t
10K
100
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, TIME (ns)
1K
500
300
200
PNP MJE171/MJE172
NPN MJE181/MJE182
70
C, CAPACITANCE (pF)
5K
3K
2K
ts
100
50
30
20
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
MJE181
RATED VCEO
MJE182
tf
50
Cib
30
20
Cob
NPN MJE181/182
PNP MJE171/172
10
0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2 3
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
TJ = 25°C
5
10
10
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
30
50
Figure 8. Capacitance
3
PACKAGE DIMENSIONS
–B–
U
F
Q
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
M
1 2 3
H
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5 _ TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA
ISSUE V
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4
◊
Motorola Bipolar Power Transistor Device Data
*MJE171/D*
MJE171/D
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