KSA1381 KSA1381 CRT Display, Video Output • High Collector-Emitter Breakdown Voltage : VCEO= -300V • Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings - 300 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage - 300 -5 V V IC Collector Current (DC) - 100 mA ICP Collector Current (Pulse) - 200 mA PC Collector Dissipation (TC=25°C) 7 W PC Collector Dissipation (Ta=25°C) 1.2 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = - 10µA, IE = 0 Min. - 300 Typ. Max. Units V BVCEO Collector-Emitter Breakdown Voltage IC = - 1mA, IB = 0 - 300 V BVEBO Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 -5 V ICBO Collector Cut-off Current VCB = - 200V, IE = 0 - 0.1 µA IEBO Emitter Cut-off Current VEB = - 4V, IC = 0 - 0.1 µA hFE DC Current Gain VCE = - 10V, IC = - 10mA VCE(sat) Collector-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 0.6 VBE(sat) Base-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA -1 fT Current Gain Bandwidth Product VCE = - 30V, IC = - 10mA 150 MHz Cob Output Capacitance VCB = - 30V, f = 1MHz 3.1 pF Cre Reverse Transfer Capacitance VCB = - 30V, f = 1MHz 2.3 pF 40 320 V V hFE Classification Classification C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1381 Typical Characteristics -10 -20 IB = -60㎂ IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT IB = -140㎂ IB = -120㎂ -16 IB = -100㎂ IB = -80㎂ -12 IB = -60㎂ -8 IB = -40㎂ -4 IB = -20㎂ IB = -50㎂ -8 IB = -40㎂ -6 IB = -30㎂ -4 IB = -20㎂ IB = -10㎂ -2 IB = 0㎂ IB = 0㎂ -0 -0 -0 -2 -4 -6 -8 -0 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN V CE = -10V 100 -10 -100 -100 Ic = 10 IB VBE(sat) -1 VCE(sat) -0.1 -0.01 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -160 1000 V CE = -30V VCE = -10V IC[mA], COLLECTOR CURRENT -140 100 10 1 -0.1 -80 -10 IC[mA], COLLECTOR CURRENT fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT -60 Figure 2. Static Characteristic 1k -1 -40 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10 -0.1 -20 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2000 Fairchild Semiconductor International -120 -100 -80 -60 -40 -20 -0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 6. Base-Emitter On Voltage Rev. A, February 2000 KSA1381 Typical Characteristics (Continued) 100 100 f=1MHz Cre[pF], CAPACITANCE Cob[pF], CAPACITANCE IE=0 f=1MHz 10 1 0.1 -0.1 -1 -10 -100 10 1 0.1 -0.1 -1000 VCB [V], COLLECTOR-BASE VOLTAGE -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 7. Collector Output Capacitance Figure 8. Reverse Transfer Capacitance 8 1000 7 50 IC(DC) MAX. PC[W], POWER DISSIPATION IC(Pulse) MAX. 0u 100 s D C (T a 10 1 1 10 ) (T 5℃ DC =2 C IC[mA], COLLECTOR CURRENT -1 =2 5℃ 1ms 10ms ) 100 1000 6 5 Tc 4 3 2 Ta 1 0 0 V CE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Safe Operating Area ©2000 Fairchild Semiconductor International 25 50 75 100 125 150 175 o T[ C], TEMPERATURE Figure 10. Power Derating Rev. A, February 2000 KSA1381 Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. E