MCC RBM05S omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • THRU RBM4S 0.5Amp Fast Recovery Glass Passivated Bridge Rectifier 50 to 400 Volts Rating to 400v PRV Ideal for printed curcuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive produst Fast recovery , low loss switching Maximum Ratings • • • MBS -1 Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Thermal Resistance Junction to Ambient : 75 °C/W MCC Catalog Number RBM05S RBM1S RBM2S RBM4S Device Marking --------- Maximum Rccurrent Peak Reverse Voltage 50V 100V 200V 400V Maximum RMS Voltage 35V 70V 140V 280V ∼ Maximum DC Blocking Voltage 50V 100V 200V 400V D B E ∼ + F C A Notch in case K M J Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time IF(AV) 0.5A TA = 40°C IFSM 30A 8.3ms, half sine VF 1.15V IFM = 0.5A; TA = 25°C IR 5 µA 0.1mA TA = 25°C TA = 125°C CJ 13pF Measured at 1.0MHz, VR=4.0V T rr 150ns H G N L M INCHES .252 .272 .017 .029 .090 .106 .004 .008 .021 .023 .055 .065 ----.200 .040 .050 .008 .014 MM 6.40 0.45 2.30 0.10 0.53 1.40 ---- 1.02 0.15 6.91 94 0.75 2.70 0.20 0.58 1.65 5.08 1.27 0.35 www.mccsemi.com Version: 3 2003/02/10 MCC RBM05S thru RBM4S Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current 35 0.8 Peak Forward Surge Current (A) Average Forward Rectified Current (A) Fig. 1 – Maximum Forward Current Derating Curve 0.7 Aluminum Substrate 0.6 0.5 0.4 Glass Epoxy P.C.B. 0.3 0.2 0.1 25 20 f = 60Hz f = 50Hz 15 10 5.0 1.0 Cycle Resistive or Inductive Load 0 0 0 20 40 60 80 100 120 140 1 160 100 10 Ambient Temperature (°C) Number of Cycles Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Leakage Characteristics Per Leg 100 Instantaneous Reverse Leakage Current (µA) 10 Instantaneous Forward Current (A) TA = 40°C Single Half Sine-Wave (JEDEC Method) 30 Pulse Width = 300 s 1% Duty Cycle TJ = 125°C 10 1 TJ = 150°C TJ = 25°C 0.1 1 0.1 TJ = 25°C 0.01 0.01 0.2 0.4 0.6 0.8 1.2 1.0 1.4 Instantaneous Forward Voltage (V) 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Junction Capacitance (pF) 30 TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p 25 20 15 10 5.0 0 0.1 1 10 100 200 Reverse Voltage (V) Version: 3 www.mccsemi.com 2003/02/10