ON MBRS140T3 Surface mount schottky power rectifier Datasheet

MBRS140T3
Preferred Device
Surface Mount
Schottky Power Rectifier
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes in surface mount applications where compact size
and weight are critical to the system.
Features
•
•
•
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE, 40 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
(0.55 V Max @ 1.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Pb−Free Package is Available
SMB
CASE 403A
PLASTIC
Mechanical Characteristics
MARKING DIAGRAM
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
AYWW
B14 G
G
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
B14
A
Y
WW
G
260°C Max. for 10 Seconds
Cathode Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
Average Rectified Forward Current
TL = 115°C
IF(AV)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
40
A
TJ
−65 to +125
°C
Operating Junction Temperature
February, 2007 − Rev. 7
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRS140T3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
1
MBRS140T3G
Package
Shipping†
SMB
2500/Tape & Reel
SMB
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRS140T3/D
MBRS140T3
THERMAL CHARACTERISTICS
Symbol
Value
Unit
RqJL
12
°C/W
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
VF
0.6
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
Characteristic
Thermal Resistance − Junction−to−Lead
(TL = 25°C)
ELECTRICAL CHARACTERISTICS
mA
1.0
10
1
0.7
0.5
TC = 100°C
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.1
TC = 25°C
0.2
0.3
0.4
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
TJ = 125°C
I R , REVERSE CURRENT (mA)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
0.5
0.6
0.7
0.8
0.9
1
1.1
100°C
75°C
25°C
0
4
8
12
16
20
24
28
32
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
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2
36
40
MBRS140T3
200
180
NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
C, CAPACITANCE (pF)
160
140
120
100
80
60
40
20
0
0
4
8
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Capacitance
10
RATED VOLTAGE APPLIED
RqJC = 12°C/W
TJ = 125°C
9
8
7
6
5
4
3
SQUARE WAVE
DC
2
1
0
30
40
50
60
70
80
90 100
TC, CASE TEMPERATURE (°C)
110
120
130
5
4
π
5
3
CAPACITANCE
LOAD
2
IPK
IAV
1
0
DC
SQUARE
WAVE
TJ = 125°C
0
10
= 20
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Current Derating (Case)
Figure 5. Power Dissipation
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3
5
MBRS140T3
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.13
2.45
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBRS140T3/D
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