Renesas HTT1129EZTL-E Silicon npn epitaxial twin transistor Datasheet

HTT1129E
Silicon NPN Epitaxial Twin Transistor
REJ03G0840-0200
(Previous ADE-208-1541A)
Rev.2.00
Aug.10.2005
Features
• Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor
2SC5849
Q2: Equivalent OSC transistor
2SC5872
Outline
RENESAS Package code: PXSF0006LA-A
(Package name: EMFPAK-6)
Pin Arrangement
6
5
B1 6
4
E2 5
Q2
Q1
1
2
3
C1
Note:
Marking is “Z”.
Rev.2.00 Aug 10, 2005 page 1 of 8
B2 4
1
E1
2
C2
3
1. Collector Q1
2. Emitter Q1
3. Collector Q2
4. Base Q2
5. Emitter Q2
6. Base Q1
HTT1129E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Ratings
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
Note: *Value on PCB. (FR–4 (13 x 13 x 0.635 mm)).
Q1
Q2
15
6
1.5
80
15
6
0.8
50
Total 200*
150
150
–55 to +150
–50 to +150
Collector Power Dissipation Pc* (mW)
Collector Power Dissipation Curve
250
200
*Value on PCB.
(FR–4 (13 x13 x 0.635 mm))
2 devices total
150
100
50
0
50
100
150
Ambient temperature Ta (°C)
Rev.2.00 Aug 10, 2005 page 2 of 8
200
Unit
V
V
V
mA
mW
°C
°C
HTT1129E
Q1 Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Reverse transfer capacitance
Gain bandwidth product
Forward transfer coefficient
Noise figure
Symbol
V(BR)CBO
ICBO
ICEO
IEBO
hFE
Cre
Min
15
⎯
⎯
⎯
90
⎯
Typ
⎯
⎯
⎯
⎯
120
0.50
Max
⎯
0.1
0.1
0.1
140
0.65
Unit
V
µA
µA
µA
⎯
pF
fT
|S21|2
NF
2
7
⎯
4
11
1.7
⎯
⎯
2.3
GHz
dB
dB
Symbol
V(BR)CBO
ICBO
ICEO
IEBO
hFE
Cre
Min
16
⎯
⎯
⎯
90
⎯
Typ
⎯
⎯
⎯
⎯
120
0.25
Max
⎯
0.1
0.1
0.1
140
0.35
Unit
V
µA
µA
µA
⎯
pF
fT
|S21|2
NF
8
13
⎯
10
16
1.0
⎯
⎯
1.6
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 15 V, IE = 0
VCE = 6 V, RBE = infinite
VEB = 1.5 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, f = 1 MHz
Emitter ground
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50 Ω
Q2 Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Reverse transfer capacitance
Gain bandwidth product
Forward transfer coefficient
Noise figure
Rev.2.00 Aug 10, 2005 page 3 of 8
Test conditions
IC = 10 µA, IE = 0
VCB = 15 V, IE = 0
VCE = 6 V, RBE = infinite
VEB = 0.8 V, IC = 0
VCE = 1 V, IC = 5 mA
VCB = 1 V, f = 1 MHz
Emitter ground
VCE = 1 V, IC = 5 mA, f = 1 GHz
VCE = 1 V, IC = 5 mA,
f = 900 MHz
ΓS = ΓL = 50 Ω
HTT1129E
Q1 Main Characteristics
Typical Output Characteristics
25
160 µA
180 µA
140 µA
16
Collector Current IC (mA)
Collector Current IC (mA)
20
Typical Forward Transfer Characteristics
120 µA
100 µA
12
80 µA
8
60 µA
40 µA
4
IB = 20 µA
1
0
2
3
4
5
VCE = 1 V
20
15
10
5
0
6
0.2
Collector to Emitter Voltage VCE (V)
100
100
10
Reverse Transfer Capacitance Cre (pF)
DC Current Transfer Ratio hFE
VCE = 1 V
1.0
1.0
Emitter ground
f = 1 MHz
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Gain Bandwidth Product vs.
Collector Current
Noise Figure vs. Collector Current
20
5
f = 1 GHz
VCE = 1 V
f = 900 MHz
16
VCE = 3 V
12
VCE = 2 V
8
4
Noise Figure NF (dB)
Gain Bandwidth Product fT (GHz)
0.8
Reverse Transfer Capacitance vs.
Collector to Base Voltage
200
1.0
0.6
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
0
0.1
0.4
4
3
2
1
VCE = 1 V
0
1
2
5
10
20
50
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 4 of 8
100
0
1
2
5
10
20
Collector Current IC (mA)
50
100
HTT1129E
S21 Parameter vs. Collector Current
20
S21 Parameter |S21|2 (dB)
f = 1 GHz
16
VCE = 2 V
12
VCE = 1 V
8
4
0
1
2
5
10
20
50
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 5 of 8
100
HTT1129E
Q2 Main Characteristics
Typical Forward Transfer Characteristics
Typical Output Characteristics
50
160 µA
140 µA
16
VCE = 1 V
Collector Current IC (mA)
Collector Current IC (mA)
20
120 µA
100 µA
12
80 µA
8
60 µA
40 µA
4
IB = 20 µA
0
1
2
3
4
5
40
30
20
10
0
6
0.2
Collector to Emitter Voltage VCE (V)
100
Collector Current
100
Reverse Transfer Capacitance Cre (pF)
DC Current Transfer Ratio hFE
VCE = 1 V
10
Emitter ground
f = 1 MHz
0.3
0.2
0.1
0
IC (mA)
0.5
1.0
1.5
Collector to Base Voltage
2.0
VCB (V)
Noise Figure vs. Collector Current
8
20
7
f = 1 GHz
16
Noise Figure NF (dB)
Gain Bandwidth Product fT (GHz)
1.0
0.4
Gain Bandwidth Product vs.
Collector Current
VCE = 3 V
12
8
4
f = 900 MHz
VCE = 1 V
6
VCE = 2 V
5
4
3
2
VCE = 3 V
1
VCE = 1 V
0
1
0.8
Reverse Transfer Capacitance vs.
Collector to Base Voltage
200
1.0
0.6
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
0
0.1
0.4
2
5
10
20
50
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 6 of 8
100
0
1
2
5
10
20
50
Collector Current IC (mA)
100
HTT1129E
S21 Parameter vs. Collector Current
20
S21 Parameter |S21|2 (dB)
f = 900MHz
VCE = 3 V
16
12
8
VCE = 1 V
4
0
1
2
5
10
20
50
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 7 of 8
100
HTT1129E
Package Dimensions
JEITA Package Code
RENESAS Code
¾
PXSF0006LA-A
D
Package Name
MASS[Typ.]
EMFPAK-6 / EMFPAK-6V
0.0012g
A
e
c
E
A
LP
HE
A
L
x M S
b
A
e
A2
A
A1
y S
Reference
Symbol
e1
S
b
I1
b1
c1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
b
b1
c
c1
D
E
e
HE
L
LP
x
y
b2
e1
I1
Dimension in Millimeters
Min
0.45
0
0.45
0.1
0.1
1.15
0.75
0.95
0.05
0.1
Nom
0.17
0.15
0.13
0.11
1.2
0.8
0.4
1.0
0.1
Max
0.5
0.01
0.49
0.25
0.15
1.25
0.85
1.05
0.15
0.3
0.05
0.05
0.3
0.7
0.35
Ordering Information
Part Name
HTT1129EZTL-E
Quantity
5000
Shipping Container
φ 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 8 of 8
Sales Strategic Planning Div.
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