Hittite HMC474MP86E Sige hbt gain block mmic amplifier, dc - 6.0 ghz Datasheet

HMC474MP86 / 474MP86E
v01.0705
AMPLIFIERS - SMT
5
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Designer’s Kit
Available
Typical Applications
Features
The HMC474MP86 & HMC474MP86E is an ideal
RF/IF gain block for:
Gain: 15.5 dB
• Cellular / PCS / 3G
Output IP3: +22 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
• CATV, Cable Modem & DBS
Single Supply: +3V to +10V
• Microwave Radio & Test Equipment
Included in the HMC-DK001 Designer’s Kit
Functional Diagram
General Description
P1dB Output Power: +8 dBm
The HMC474MP86 & HMC474MP86E are general
purpose SiGe Heterojunction Bipolar Transistor (HBT)
Gain Block MMIC SMT amplifiers covering DC to 6
GHz. This Micro-P packaged amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage with up
to +10 dBm output power. The HMC474MP86 &
HMC474MP86E offer 15.5 dB of gain with a +22 dBm
output IP3 at 850 MHz while requiring only 25 mA from
a single positive supply. The Darlington feedback pair
used results in reduced sensitivity to normal process
variations and excellent gain stability over temperature
while requiring a minimal number of external bias
components.
Electrical Specifications, Vs= 5.0 V, Rbias= 110 Ohm, TA = +25° C
Parameter
Min.
Typ.
13
12
10
9
8
7
15.5
14
12
11
10
9
Max.
dB
dB
dB
dB
dB
dB
Gain
Gain Variation Over Temperature
DC - 6.0 GHz
0.01
Input Return Loss
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
15
16
19
16
dB
dB
dB
dB
Output Return Loss
DC - 5.0 GHz
5.0 - 6.0 GHz
17
13
dB
dB
Reverse Isolation
DC - 4.0 GHz
17
dB
Output Power for 1 dB Compression (P1dB)
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
8
7
6
dBm
dBm
dBm
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
22
20
17
dBm
dBm
dBm
Noise Figure
DC - 5.0 GHz
5.0 - 6.0 GHz
3
3.4
dB
dB
25
mA
Supply Current (Icq)
5
4
3
0.015
Note: Data taken with broadband bias tee on device output.
5 - 420
Units
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
dB/ °C
HMC474MP86 / 474MP86E
v01.0705
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
5
Gain vs. Temperature
20
20
15
18
16
14
5
0
GAIN (dB)
RESPONSE (dB)
10
S21
S11
S22
-5
12
10
8
6
+25 C
+85 C
-40 C
-10
4
-15
2
-20
0
0
1
2
3
4
5
6
7
8
0
1
FREQUENCY (GHz)
4
5
6
Output Return Loss vs. Temperature
0
0
+25 C
+85 C
-40 C
-5
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
3
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-10
-15
-20
+25 C
+85 C
-40 C
-10
-15
-20
-25
-25
0
1
2
3
4
5
6
0
1
FREQUENCY (GHz)
2
3
4
5
6
5
6
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
6
+25 C
+85 C
-40 C
5
-5
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
2
AMPLIFIERS - SMT
Broadband Gain & Return Loss
+25 C
+85 C
-40 C
-10
-15
-20
4
3
2
1
-25
0
0
1
2
3
4
FREQUENCY (GHz)
5
6
0
1
2
3
4
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 421
HMC474MP86 / 474MP86E
v01.0705
P1dB vs. Temperature
Psat vs. Temperature
12
12
10
10
8
8
Psat (dBm)
P1dB (dBm)
6
4
6
+25 C
+85 C
-40 C
4
+25 C
+85 C
-40 C
2
2
0
0
0
1
2
3
4
5
6
0
2
OIP3 (dBm)
25
20
15
+25 C
+85 C
-40 C
5
0
1
2
3
4
5
6
Gain
P1dB
28
Icc (mA)
+85 C
25
+25 C
23
-40 C
22
21
20
2.2
2.3
Vcc (Vdc)
2.4
2.5
2.6
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
27
2.1
Psat
OIP3
24
20
16
12
8
4
0
3
4
5
6
7
8
9
10
Gain, Power & OIP3 vs. Supply Voltage
for Rs = 110 Ohms @ 850 MHz
28
2
6
Vs (Vdc)
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, RBIAS= 110 Ohms
24
5
32
FREQUENCY (GHz)
26
4
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 25 mA @ 850 MHz
30
10
3
FREQUENCY (GHz)
Output IP3 vs. Temperature
5 - 422
1
FREQUENCY (GHz)
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
AMPLIFIERS - SMT
5
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
32
28
Gain
P1dB
Psat
OIP3
24
20
16
12
8
4
0
4.75
5
Vs (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5.25
HMC474MP86 / 474MP86E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
5
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+6.0 Vdc
Collector Bias Current (Icc)
35 mA
RF Input Power (RFin)(Vcc = +2.4 Vdc)
+5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 4.3 mW/°C above 85 °C)
0.280 W
Thermal Resistance
(junction to lead)
232 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1B
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
AMPLIFIERS - SMT
v01.0705
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATABLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC474MP86
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC474MP86E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking
[1]
H474
[2]
H474
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 423
HMC474MP86 / 474MP86E
v01.0705
AMPLIFIERS - SMT
5
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc= 25 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
3V
5V
6V
8V
10V
RBIAS VALUE
30 Ω
110 Ω
150 Ω
240 Ω
300 Ω
RBIAS POWER RATING
1/8 W
1/8 W
1/4 W
1/2 W
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
5 - 424
50
900
1900
2200
2400
3500
5200
5500
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
6.8 nH
3.3 nH
C1, C2
0.01 μF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC474MP86 / 474MP86E
v01.0705
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6.0 GHz
5
AMPLIFIERS - SMT
Evaluation PCB
List of Materials for Evaluation PCB 107179
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1, C2
Capacitor, 0402 Pkg.
C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 μF Capacitor, Tantalum
R1
Resistor, 1210 Pkg.
L1
Inductor, 0603 Pkg.
U1
HMC474MP86 / HMC474MP86E
PCB [2]
107087 Evaluation PCB
[1]
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown. A sufficient
number of VIA holes should be used to connect
the top and bottom ground planes. The evaluation
board should be mounted to an appropriate heat
sink. The evaluation circuit board shown is available
from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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