ON MMUN2241LT1 Bias resistor transistor Datasheet

MMUN2211LT1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space and Component Count
• The SOT-23 package can be soldered using wave or reflow. The
•
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device
Number to order the 7 inch/3000 unit reel. Replace “T1” with
“T3” in the Device Number to order the13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation @ TA = 25°C
(Note 1) Derate above 25°C
PD
*200
1.6
mW
mW/°C
DEVICE MARKING AND RESISTOR VALUES
Device
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PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 1
BASE
(INPUT)
R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
3
3
1
A8x
2
SOT−23
CASE 318
STYLE 6
1
2
A8x = Device Code
x
= (See Table)
ORDERING INFORMATION
Device
Package
Shipping†
MMUN2211LT1
SOT−23
3000/Tape & Reel
MMUN2212LT1
SOT−23
3000/Tape & Reel
MMUN2213LT1
SOT−23
3000/Tape & Reel
MMUN2214LT1
SOT−23
3000/Tape & Reel
MMUN2215LT1
SOT−23
3000/Tape & Reel
MMUN2216LT1
SOT−23
3000/Tape & Reel
MMUN2230LT1
SOT−23
3000/Tape & Reel
Marking
R1(K)
R2(K)
MMUN2211LT1
A8A
10
10
MMUN2212LT1
A8B
22
22
MMUN2213LT1
A8C
47
47
MMUN2214LT1
A8D
10
47
MMUN2215LT1
A8E
10
∞
MMUN2231LT1
SOT−23
3000/Tape & Reel
MMUN2216LT1
A8F
4.7
∞
MMUN2232LT1
SOT−23
3000/Tape & Reel
MMUN2230LT1
A8G
1.0
1.0
MMUN2233LT1
SOT−23
3000/Tape & Reel
MMUN2231LT1
A8H
2.2
2.2
MMUN2234LT1
SOT−23
3000/Tape & Reel
MMUN2232LT1
A8J
4.7
4.7
MMUN2238LT1
SOT−23
3000/Tape & Reel
MMUN2233LT1
A8K
4.7
47
MMUN2241LT1
SOT−23
3000/Tape & Reel
MMUN2234LT1
A8L
22
47
MMUN2238LT1
A8R
2.2
∞
MMUN2241LT1
A8U
100
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
 Semiconductor Components Industries, LLC, 2004
May, 2004 − Rev. 4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMUN2211LT1/D
MMUN2211LT1 Series
THERMAL CHARACTERISTICS
Rating
Thermal Resistance − Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Symbol
Value
Unit
RθJA
625
°C/W
TJ, Tstg
−65 to +150
°C
TL
260
10
°C
Sec
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
4.0
0.1
mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 2), (IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
350
350
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
Characteristic
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
ON CHARACTERISTICS (Note 2)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1/
MMUN2238LT1
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
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2
Vdc
MMUN2211LT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.88
130
kΩ
R1/R2
0.8
0.17
−
−
0.8
0.055
0.38
1.0
0.21
−
−
1.0
0.1
0.47
1.2
0.25
−
−
1.2
0.185
0.56
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 k Ω)
VOL
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2213LT1
MMUN2241LT1
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k Ω)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k Ω)
MMUN2230LT1
MMUN2215LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k Ω)
MMUN2216LT1
MMUN2233LT1
MMUN2238LT1
Input Resistor
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2238LT1
MMUN2241LT1
Resistor Ratio
MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1/MMUN2238LT1
MMUN2241LT1
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
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3
Vdc
MMUN2211LT1 Series
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
250
200
1
IC/IB = 10
TA = −25°C
25°C
75°C
0.1
150
100
0.01
RθJA= 625°C/W
50
0
−50
0
50
100
0.001
150
0
40
60
IC, COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. VCE(sat) vs. IC
VCE = 10 V
TA = 75°C
25°C
−25°C
100
10
1
10
IC, COLLECTOR CURRENT (mA)
100
3
2
1
0
100
f = 1 MHz
lE = 0 A
TA = 25°C
0
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
1
0.1
0.01
VO = 5 V
1
2
3
30
50
40
10
TA = −25°C
0
20
Figure 4. Output Capcitance
25°C
10
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
0.001
80
4
1000
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
20
TA, AMBIENT TEMPERATURE (5°C)
Cob, CAPACITANCE (pF)
hFE, DC CURRENT GAIN (NORMALIZED)
PD, POWER DISSIPATION (MILLIWATTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
4
5
6
7
8
9
25°C
75°C
1
0.1
0
10
TA = −25°C
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current vs. Input Voltage
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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4
50
MMUN2211LT1 Series
−
1000
1
TA = −25°C
IC/IB = 10
25°C
75°C
0.1
0.01
0.001
0
20
60
40
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
VCE = 10 V
TA = 75°C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 A
TA = 25°C
2
1
75°C
25°C
TA = −25°C
10
1
0.1
0.01
VO = 5 V
0
0
10
20
30
50
40
0.001
2
0
4
6
8
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 8. DC Current Gain
4
3
−25°C
25°C
100
VO = 0.2 V
TA = −25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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5
50
10
MMUN2211LT1 Series
10
IC/IB = 10
TA = −25°C
75°C
25°C
1
0.1
0.01
0
20
40
60
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2213LT1
TA = 75°C
25°C
−25°C
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) vs. IC
Figure 13. DC Current Gain
100
0.8
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 A
TA = 25°C
0.6
0.4
0.2
10
20
30
25°C
10
TA = −25°C
1
0.1
0.01
VO = 5 V
0.001
50
40
75°C
0
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current vs. Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
IC, COLLECTOR CURRENT (mA)
1
0
0
1000
TA = −25°C
25°C
75°C
10
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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6
50
10
MMUN2211LT1 Series
1
IC/IB = 10
TA = −25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2214LT1
300
VCE = 10
TA = 75°C
250
25°C
200
−25°C
150
100
50
0
1
2
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
4
Figure 17. VCE(sat) vs. IC
Figure 18. DC Current Gain
100
f = 1 MHz
lE = 0 A
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
10
VO = 5 V
1
0
2
4
6
8
Vin, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current vs. Input Voltage
Figure 19. Output Capacitance
10
TA = −25°C
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
4
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
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7
50
10
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2232LT1
1000
VCE = 10 V
IC/IB =10
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = 75°C
0.1
25°C
−25°C
0.01
TA = 75°C
100
10
1
0.001
4
8
12
16
20
24
0
28
25
IC, COLLECTOR CURRENT (mA)
50
75
100
125
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) vs. IC
Figure 23. DC Current Gain
6
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
5
4
3
2
1
0
VO = 5 V
75°C
25°C
10
1
TA = −25°C
0.1
0.01
0
10
20
30
40
50
60
0
2
4
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
Figure 25. Output Current vs. Input Voltage
10
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
−25°C
TA = −25°C
75°C
1
0.1
0
25°C
10
20
IC, COLLECTOR CURRENT (mA)
Figure 26. Output Voltage vs. Input Current
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8
30
8
MMUN2211LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2233LT1
1000
IC/IB = 10
0.1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
25°C
100
75°C
25°C
TA = −25°C
0.01
TA = −25°C
10
VCE = 10 V
1
0.001
2
7
12
17
22
27
1
32
100
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) vs. IC
Figure 28. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
3.5
3
2.5
2
1.5
1
0.5
0
75°C
TA = −25°C
10
1
0.1
25°C
VO = 5 V
0.01
0
10
20
30
40
50
60
0
2
4
6
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 29. Output Capacitance
Figure 30. Output Current vs. Input Voltage
10
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
TA = −25°C
25°C
75°C
1
0.1
0
12
18
6
24
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage vs. Output Current
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30
8
MMUN2211LT1 Series
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure 32. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure 33. Open Collector Inverter: Inverts
the Input Signal
Figure 34. Inexpensive, Unregulated Current Source
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10
MMUN2211LT1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−08
ISSUE AI
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MMUN2211LT1 Series
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMUN2211LT1/D
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