IXYS IXGE200N60B Hiperfast igbt Datasheet

HiPerFASTTM IGBT
IXGE 200N60B
E
Symbol
Test Conditions
VCES
IC25
VCE(sat)
tfi
=
=
=
=
600 V
160 A
2.3 V
160ns
ISOPLUS 227TM (IXGE)
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
Ec
G
Ec
IC25
TC = 25°C
160
A
IL
Terminal Current Limit(RMS)
100
A
G = Gate, E = Emitter, C = Collector
IC90
TC = 90°C
96
A
c
ICM
TC = 25°C, 1 ms
400
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 2.4 Ω
Clamped inductive load @ 0.8 VCES
ICM = 200
A
PC
TC = 25°C
416
W
-40 ... +150
°C
TJ
TJM
150
°C
Tstg
-40 ... +150
°C
2500
3000
V~
V~
VISOL
50/60 Hz
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
Symbol
19
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
IC
= 1 mA , VGE = 0 V
600
VGE(th)
IC
= 1 mA, VCE = VGE
2.5
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= 120A, VGE = 15 V
© 2004 IXYS All rights reserved
g
TJ = 25°C
TJ = 125°C
V
5.5
V
200
2
µA
mA
±400
nA
2.3
V
C
either emitter terminal can be
used as Main or Kelvin Emitter
Features
• Conforms to SOT-227B outline
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
(< 50 pF)
• Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode
power supplies
Advantages
•Easy to mount with 2 screws
•Space savings
•High power density
DS98911B(09/04)
IXGE 200N60B
Symbol
Test Conditions
gfs
IC
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
= 60 A; VCE = 10 V,
50
75
SOT-227B miniBLOC
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
td(on)
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
pF
680
pF
190
pF
350
nC
72
nC
131
nC
60
ns
45
ns
IC = 120A, VGE = 15 V, VCE = 0.5 VCES
Qgc
tri
11000
Inductive load, TJ = 25°°C
IC = 100A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4 Ω
2.4
mJ
Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
200
360
ns
160
280
ns
5.5
9.6 mJ
Inductive load, TJ = 125°°C
60
ns
60
ns
4.8
mJ
290
ns
IC =100A, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4 Ω
Remarks: Switching times
may increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
250
ns
8.7
mJ
RthJC
Please see IXGN200N60B data
sheet for characteristic curves.
0.3 K/W
0.07
RthCK
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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