SIRECT MUR1520 Ultra fast recovery diode Datasheet

MUR1520, MUR1560
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
MUR1520
MUR1560
VRSM
V
200
600
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Unit
TVJ=TVJM
TC=100oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
25
15
150
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
100
110
85
95
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
50
50
36
37
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
200
600
Dim.
o
C
62
W
0.4...0.6
Nm
2
g
MUR1520, MUR1560
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
50
25
3
uA
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
1.5
1.7
V
VTO
For power-loss calculations only
1.12
V
TVJ=TVJM
23.2
rT
RthJC
RthCK
RthJA
trr
IRM
m
2
K/W
0.5
60
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
o
_
VR=350V; IF=15A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
35
50
ns
4
4.4
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-220AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
MUR1520, MUR1560
Ultra Fast Recovery Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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