Anpec APM4500K Dual enhancement mode mosfet (n-and p-channel) Datasheet

APM4500
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
N-Channel
20V/8A ,
•
Pin Description
RDS(ON)=22mΩ(typ.) @ VGS=4.5V
RDS(ON)=30mΩ(typ.) @ VGS=2.5V
P-Channel
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
-20V/-4.3A , RDS(ON)=80mΩ(typ.) @ VGS=-4.5V
RDS(ON)=105mΩ(typ.) @ VGS=-2.5V
•
SO-8
Super High Dense Cell Design for Extremely Low
D1
RDS(ON)
•
•
D1
S2
Reliable and Rugged
SO-8 Package
G2
G1
Applications
S1
•
N-Channel MOSFET
Power Management in Notebook Computer ,
D2
D2
P-Channel MOSFET
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
APM4500
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150°C
Handling Code
TR : Tape & Reel
Handling Code
Temp. Range
Package Code
APM4500 K :
APM4500
XXXXX
XXXXX - Date Code
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
1
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APM4500
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
N-Channel
P-Channel
VDSS
Drain-Source Voltage
20
-20
VGSS
Gate-Source Voltage
±12
±12
ID*
Maximum Drain Current – Continuous
8
-4.3
IDM
Maximum Drain Current – Pulsed
35
-17
PD
Maximum Power Dissipation
TA=25°C
2.5
2.5
TA=100°C
1.0
1.0
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
RθjA
Thermal Resistance – Junction to Ambient
Unit
V
A
W
150
°C
-55 to 150
°C
62.5
°C/W
* Surface Mounted on FR4 Board, t ≤ 10 sec.
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4500
Unit
Min. Typ. Max.
Test Condition
Static
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th)
Gate Threshold Voltage
IGSS
Gate Leakage Current
N-Ch
VGS=0V , IDS=250µA
20
P-Ch
-20
VDS=16V , VGS=0V
N-Ch
1
VDS=-16V , VGS=0V
P-Ch
-1
VDS=VGS , IDS=250µA
N-Ch
VDS=VGS , IDS=-250µA
P-Ch -0.45
VGS=±12V , VDS=0V
N-Ch
±100
VGS=±12V , VDS=0V
P-Ch
±100
VGS=4.5V , IDS=8A
RDS(ON)a
Drain-Source On-state
VGS=2.5V , IDS=5.2A
Resistance
VGS=-4.5V , IDS=-4.3A
VGS=-2.5V , IDS=-2A
VSDa
Diode Forward Voltage
N-Ch
P-Ch
0.5
V
0.7
1
µA
V
-1
22
26
30
36
80
90
105
115
ISD=1.7A , VGS=0V
N-Ch
0.8
1.3
ISD=-1.25A , VGS=0V
P-Ch
-0.7
-1.3
nA
mΩ
V
Notes
a
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
2
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APM4500
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4500
Unit
Min. Typ. Max.
Test Condition
Dynamicb
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
Tf
Turn-off Fall Time
Ciss
Input Capacitance
N-Channel
N-Ch
10
13
VDS=10V , IDS= 8A
P-Ch
9
12
VGS=4.5V
N-Ch
3
P-Channel
P-Ch
3
VDS=-10V , IDS=-3A
N-Ch
2.5
VGS=-4.5V
P-Ch
1
N-Channel
N-Ch
16
32
VDD=10V , IDS=1A ,
P-Ch
13
21.5
VGEN =4.5V , RG=0.2Ω
N-Ch
40
75
P-Ch
36
56
P-Channel
N-Ch
42
78
VDD=-10V , IDS=-1A ,
P-Ch
45
69.5
VGEN =-4.5V , RG=6Ω
N-Ch
20
35
P-Ch
37
57.5
N-Ch
675
P-Ch
510
N-Ch
178
P-Ch
270
N-Ch
105
P-Ch
120
VGS=0V
Coss
Output Capacitance
VDS=15V
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
nC
ns
pF
Notes
b
: Guaranteed by design, not subject to production testing
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
3
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APM4500
Typical Characteristics
N-Channel MOSFET
Output Characteristics
Transfer Characteristics
20
20
VGS=3,4,5,6,7,8,9,10V
ID-Drain Current (A)
ID-Drain Current (A)
VGS=2.5V
16
12
8
VGS=2V
16
12
8
TJ=125°C
4
4
TJ=-55°C
TJ=25°C
VGS=1.5V
0
0
1
2
3
4
5
6
7
0
0.0
8
VDS - Drain-to-Source Voltage (V)
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
1.50
0.06
RDS(ON)-On-Resistance (Ω)
VGS(th)-Threshold Voltage (V)
(Normalized)
IDS=250µA
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
0.04
VGS=2.5V
0.03
VGS=4.5V
0.02
0.01
0.00
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
0.05
0
2
4
6
8
10
ID - Drain Current (A)
4
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APM4500
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.10
2.00
ID=8A
RDS(ON)-On-Resistance (Ω)
(Normalized)
0.09
RDS(ON)-On-Resistance (Ω)
On-Resistance vs. Junction Temperature
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1
2
3
4
5
6
7
8
9
VGS=4.5V
ID=8A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
10
VGS - Gate-to-Source Voltage (V)
-25
0
50
75
100 125 150
TJ - Junction Temperature (°C)
Gate Charge
Capacitance
10
1000
VDS=10V
ID=1A
8
Frequency=1MHz
800
Capacitance (pF)
VGS-Gate-Source Voltage (V)
25
6
4
Ciss
600
400
2
200
0
0
Coss
Crss
0
4
8
12
16
20
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
5
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APM4500
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
20
60
48
1
TJ=150°C
Power (W)
IS-Source Current (A)
10
TJ=25°C
36
24
12
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.01
1.4
0.1
VSD -Source-to-Drain Voltage (V)
1
10
100
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
D= 0.2
D= 0.1
0.1
D= 0.05
D= 0.02
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=62.5°C/W
3.T JM -T A =P DM Z thJA
4.Surface Mounted
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
6
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APM4500
Typical Characteristics
P-Channel MOSFET
Output Characteristics
Transfer Characteristics
10
10
-VGS=2V
8
-ID-Drain Current (A)
-ID-Drain Current (A)
-VGS=3,4.5,6,7,8V
6
4
-VGS=1.5V
2
8
6
4
TJ=25°C
TJ=-55°C
TJ=125°C
2
-VGS=1V
0
0
1
2
3
4
5
6
7
8
9
0
0.0
10
0.5
-VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
On-Resistance vs. Drain Current
0.16
1.50
1.25
RDS(ON)-On-Resistance (Ω)
-VGS(th)-Threshold Voltage (V)
(Normalized)
-IDS=250µA
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
0.12
-VGS=2.5V
0.10
-VGS=4.5V
0.08
0.06
0.04
0.02
100 125 150
Tj - Junction Temperature (°C)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
0.14
0
2
4
6
8
10
-ID - Drain Current (A)
7
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APM4500
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
2.0
-ID=4.3A
0.18
RDS(ON)-On-Resistance (Ω)
(Normalized)
RDS(ON)-On-Resistance (Ω)
0.20
On-Resistance vs. Junction Temperature
0.16
0.14
0.12
0.10
0.08
0.06
0.04
-VGS=4.5V
-ID=4.3A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1
2
3
4
5
6
7
0.2
-50
8
-VGS - Gate-to-Source Voltage (V)
-25
0
75
100 125 150
Capacitance
800
-VDS=10V
-ID=3A
Frequency=1MHz
700
4
Capacitance (pF)
-VGS-Gate-Source Voltage (V)
50
TJ - Junction Temperature (°C)
Gate Charge
5
25
3
2
600
Ciss
500
400
Coss
300
1
200
0
0
2
4
6
8
100
10
QG - Gate Charge (nC)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
Crss
0
5
10
15
20
-VDS - Drain-to-Source Voltage (V)
8
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APM4500
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
Single Pulse Power
10
14
-IS-Source Current (A)
12
TJ=150°C
Power (W)
10
TJ=25°C
8
6
4
2
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.01
1.6
0.1
-VSD -Source-to-Drain Voltage (V)
1
10
100
Time (sec)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
1E-4
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R thJA=62.5°C/W
3.T JM-T A=P DMZ thJA
SINGLE PULSE
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
9
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APM4500
Packaging Information
E
e1
0.015X45
SOP-8 pin ( Reference JEDEC Registration MS-012)
H
e2
D
A1
A
1
L
0.004max.
Dim
Mi ll im et er s
Inche s
A
Min .
1. 35
Max .
1. 75
Min.
0. 053
Max .
0. 069
A1
D
E
0. 10
4. 80
3. 80
0. 25
5. 00
4. 00
0. 004
0. 189
0. 150
0. 010
0. 197
0. 157
H
L
e1
e2
5. 80
0. 40
0. 33
6. 20
1. 27
0. 51
0. 228
0. 016
0. 013
0. 244
0. 050
0. 020
φ 1
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
1. 27B S C
0. 50B S C
8°
8°
10
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APM4500
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Reference JEDEC Standard J-STD-020A APRIL 1999
Peak temperature
183°C
Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/
Convection
Average ramp-up rate(183°C to Peak)
3°C/second max.
120 seconds max
Preheat temperature 125 ± 25°C)
60 – 150 seconds
Temperature maintained above 183°C
Time within 5°C of actual peak temperature 10 –20 seconds
Peak temperature range
220 +5/-0°C or 235 +5/-0°C
Ramp-down rate
6 °C /second max.
6 minutes max.
Time 25°C to peak temperature
VPR
10 °C /second max.
60 seconds
215-219°C or 235 +5/-0°C
10 °C /second max.
Package Reflow Conditions
pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
11
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C
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APM4500
Reliability test program
Test item
SOLDERABILITY
HOLT
PCT
TST
Method
MIL-STD-883D-2003
MIL-STD 883D-1005.7
JESD-22-B, A102
MIL-STD 883D-1011.9
Description
245°C,5 SEC
1000 Hrs Bias @ 125°C
168 Hrs, 100% RH, 121°C
-65°C ~ 150°C, 200 Cycles
Carrier Tape & Reel Dimensions
D
P
Po
E
t
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
B
T1
Application
SOP- 8
A
B
330 ± 1
F
5.5± 1
J
T1
T2
W
P
E
62 +1.5
C
12.75+
0.15
2 ± 0.5
12.4 ± 0.2
2 ± 0.2
12± 0. 3
8± 0.1
1.75±0.1
D
D1
Po
P1
Ao
Bo
Ko
t
2.0 ± 0.1
6.4 ± 0.1
5.2± 0. 1
1.55 +0.1 1.55+ 0.25 4.0 ± 0.1
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
12
2.1± 0.1 0.3±0.013
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APM4500
Cover Tape Dimensions
Application
SOP- 8
Carrier Width
12
Cover Tape Width
9.3
Devices Per Reel
2500
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Copyright  ANPEC Electronics Corp.
Rev. A.2 - May., 2003
13
www.anpec.com.tw
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