FMBS5551 FMBS5551 NPN General Purpose Amplifier NC • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. C1 E B C pin #1 C SuperSOTTM-6 single Mark: .3S1 Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 160 Units V VCBO VEBO Collector-Base Voltage 180 V Emitter-Base Voltage 6.0 IC Collector Current V 600 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units V(BR)CEO Collector-Emitter Sustaining Voltage * IC = 1.0mA, IB = 0 160 V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 180 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6.0 V ICBO Collector Cutoff Current VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100°C 50 50 nA µA IEBO Emitter Cut-off Current VEB = 4.0V, IC = 0 50 nA On Characteristics hFE DC Current Gain IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V 80 80 30 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.15 0.2 V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 1.0 1.0 V 300 MHz Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 10, f = 100MHz Cobo Output Capacitance VCE = 10V, IC = 0, f = 1.0MHz 100 6.0 pF Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 20 pF hfe Small Single Current Gain IC = 1.0mA, VCE = 10V, f = 1.0KHz NF Noise Figure IC = 250µA, VCE = 5.0V, RS = 1.0KΩ, f = 10 Hz to 15.7KHz 50 250 8.0 dB * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 Symbol PD Parameter Total Device Dissipation * Max. 700 Units mW RθJA Thermal Resistance, Junction to Ambient, total 180 °C/W * Device mounted on a 1 in 2 pad of 2 oz copper. ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 FMBS5551 Thermal Characteristics Ta=25°C unless otherwise noted FMBS5551 125 °C 200 150 25 °C 100 - 40 °C V C E = 5V 50 0 0.1 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) 50 100 VCESAT - COLLECTOR EMITTE R VOLTAGE (V) vs Collector Current 250 Voltage vs Collector Current 0.5 0.4 0.3 β β β 0.2 β 25 °C 125 °C 0.1 0 - 40 °C 1 β 10 100 I C - COLLECTOR CURRE NT (mA) 200 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current β Voltage vs Collector Current β Collector Current 1 β = 10 β β 0.8 - 40 °C 25 °C 0.6 125 °C β 0.4 0.2 0 1 10 100 I - COLLECTOR CURRE NT (mA) 200 1 0.8 - 40 °C VCB = 100V 10 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) Figure 5. Collector Cutoff Current vs Ambient Temperature ©2004 Fairchild Semiconductor Corporation 125 125 °C 0.4 VCE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 200 Figure 4. Base-Emitter On Voltage vs Collector Current BV CER - BREAKDOWN VOLTAGE (V) 50 25 °C 0.6 Figure 3. Base-Emitter Saturation Voltage vs Collector Current I CBO- COLLE CTOR CURRENT (nA) β = 10 Figure 1. Typical Pulsed Current Gain vs Collector Current V BEON - BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Between Emitter-Base 260 I C = 1.0 mA 240 220 Ω 200 Ω 180 Ω 160 0.1 1 10 Ω 100 1000 RESISTANCEΩ(kΩ ) Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base Rev. A1, November 2004 f = 1.0 MHz CAPACITANCE (pF) 25 20 15 C ib 5 C cb 0 0.1 1 10 V CE - COLLECTOR VOLTAGE (V) Figure 7. Input and Output Capacitance vs Reverse Voltage ©2004 Fairchild Semiconductor Corporation 100 h FE - SMALL SIGNAL CURRENT GAIN (Continued) 30 10 FMBS5551 Typical Characteristics vs Collector Current 16 FREG = 20 MHz V CE = 10V 12 8 4 0 1 10 I C - COLLECTOR CURRENT (mA) 50 Figure 8. Small Signal current Gain vs Collector Current Rev. A1, November 2004 FMBS5551 Package Dimensions SuperSOTTM-6 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A1, November 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I13