MOTOROLA MRF185 N-channel enhancement-mode lateral mosfet Datasheet

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFET
• High Gain, Rugged Device
• Broadband Performance from HF to 1 GHz
• Bottom Side Source Eliminates DC Isolators, Reducing Common Mode
Inductances
1.0 GHz, 85 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–04, STYLE 1
NI–860
ARCHIVED 2005
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.45
Watts
W/°C
Symbol
Max
Unit
RθJC
0.7
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
–
–
1
µAdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
–
–
1
µAdc
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 1 mAdc)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF185
1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VGS(Q)
3
4
5
Vdc
Delta Quiescent Voltage between sides
(VDS = 26 V, ID = 300 mA per side)
∆VGS(Q)
–
0.15
0.3
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A per side)
VDS(on)
–
0.75
1
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A per side)
gfs
1.6
2
–
s
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
38
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
–
4.6
6
pF
Common Source Power Gain
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
Gps
11
14
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA)
η
45
53
–
%
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 26 V, ID = 300 mA per side)
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS
Ψ
No Degradation in Output Power
ARCHIVED 2005
Load Mismatch
(VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA,
Load VSWR 5:1 at All Phase Angles)
MRF185
2
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
PACKAGE DIMENSIONS
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CASE 375B–04
ISSUE E
NI–860
INCHES
MIN
MAX
MILLIMETERS
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MAX
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ARCHIVED 2005
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MOTOROLA RF DEVICE DATA
MRF185
3
Archived 2005
ARCHIVED 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
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E Motorola, Inc. 2002.
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MRF185
4
◊
MOTOROLA RF DEVICE DATA
MRF185/D
Archived 2005
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