Fairchild FJV992 Audio frequency low noise amplifier Datasheet

FJV992
FJV992
Audio Frequency Low Noise Amplifier
• Complement to FJV1845
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
-120
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-120
-5
V
V
IC
Collector Current
-50
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -100µA, IE=0
Min.
-120
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC= -1mA, IB=0
-120
V
BVEBO
Emitter-Emitter Breakdown Voltage
IE= -10µA, IC=0
-5
V
IEBO
Emitter-Base Cutoff Current
VEB= -6V, IC=0
hFE1
hFE2
DC Current Gain
VCE= -6V, IC= -0.1mA
VCE= -6V, IC= -1mA
-30
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
VBE (on)
Base-Emitter On Voltage
VCE= -6V, IC= -1mA
-0.55
fT
Current Gain Bandwidth Product
VCE= -6V, IC= -1mA
50
Cob
Output Capacitance
VCB= -30V, IE=0, f=1MHz
NV
Noise Voltage
150
200
nA
800
-300
mV
-0.65
V
MHz
3
pF
40
mV
hFE2 Classification
Classification
P
F
E
hFE2
200 ~ 400
300 ~ 600
400 ~ 800
Marking
2J P
hFE Classification
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
FJV992
Typical Characteristics
-1.0
-10
IB = -1.2µ A
IB = -24µ A
IB = -1.0µ A
-0.8
IB = -0.8µ A
-0.6
IB = -0.6µ A
-0.4
IB = -0.4µ A
-0.2
IB = -0.2µ A
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
IB = -1.2µ A
IB = -20µ A
-8
IB = -16µ A
-6
IB = -12µ A
IB = -8µ A
-4
IB = -4µ A
-2
IB = 0
0.0
IB = 0
0
0
-20
-40
-60
-80
-100
0
-1
VCE[V], COLLECTOR-EMITTER VOLTAGE
-3
-4
-5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
-1
1000
0
Ta=25 C
0
Ta=-25 C
100
10
-1E-3
-0.01
IC=10IB
VCE(SAT)[V], SATURATION VOLTAGE
VCE=-6V
0
Ta=125 C
hFE, DC CURRENT GAIN
-2
0
-0.1
0
Ta=125 C
Ta=25 C
0
Ta=-25 C
-0.01
-1E-3
-0.1
IC[mA], COLLECTOR CURRENT
-0.01
-0.1
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
VCE=-6V
-0.10
IC[A], COLLECTOR CURRENT
VBE(SAT)[V], SATURATION VOLTAGE
-0.12
IC=10IB
1
0
Ta=-25 C
0
Ta=25 C
0
Ta=125 C
0.1
1E-3
0.01
0.1
IC[mA], COLLECTOR CURRENT
Figure 5. Base-Emitter Saturation Voltage
©2002 Fairchild Semiconductor Corporation
-0.08
-0.06
0
Ta=125 C
0
0
Ta=-25 C
Ta=25 C
-0.04
-0.02
-0.00
-0.2
-0.4
-0.6
-0.8
-1.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 6. Base-Emitter Voltage
Rev. B, November 2002
FJV992
10
Cob [pF], CAPACITANCE
IE=0
f = 1MHz
1
0.1
-1
-10
-100
-1000
V CB [V], COLLECTOR-BASE VOLTAGE
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Typical Characteristics (Continued)
1000
VCE = -6V
100
10
1
0.1
1
10
100
IE[mA], COLLECTOR CURRENT
Figure 7. Collector Output Capacitance
Figure 8. Current Gain Bandwidth Product
PC[mW], POWER DISSIPATION
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
o
Ta[ C], AMBIENT TEMPERATURE
Figure 9. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
FJV992
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
FACT Quiet series™
Bottomless™
FAST®
FASTr™
CoolFET™
CROSSVOLT™ FRFET™
GlobalOptoisolator™
DOME™
EcoSPARK™
GTO™
E2CMOS™
HiSeC™
EnSigna™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
Similar pages