Microsemi APTGF90DH60T3G Asymmetrical - bridge npt igbt power module Datasheet

APTGF90DH60T3G
Asymmetrical - Bridge
NPT IGBT Power Module
13
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
14
Q1
CR1
VCES = 600V
IC = 90A @ Tc = 80°C
CR3
18
22
7
23
8
19
Q4
CR2
CR4
4
3
30
29
32
31
15
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
Features
• Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Tc = 25°C
Reverse Bias Safe Operating Area
Tj = 150°C
200A @ 600V
Tc = 25°C
Tc = 80°C
Tc = 25°C
Unit
V
April, 2009
IC
Max ratings
600
110
90
200
±20
416
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGF90DH60T3G – Rev 0
Symbol
VCES
APTGF90DH60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
Typ
4.5
2
2.2
5.5
Min
Typ
Max
Unit
250
2.5
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol Characteristic
Cies
Cres
Input Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
Test Conditions
VGE = 0V ; VCE = 25V
f = 1MHz
VGE= 15V ; VCE=300V
IC=100A
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 2.2Ω
VGE = ±15V
Tj = 125°C
VBus = 300V
IC = 100A
Tj = 125°C
RG = 2.2Ω
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
4.3
0.4
nF
240
nC
25
10
130
20
ns
25
11
150
ns
30
1
mJ
3
450
A
Diode ratings and characteristics (CR2 & CR3)
IRM
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
600
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
VR=600V
IF = 100A
IF = 200A
IF = 100A
IF = 100A
VR = 400V
di/dt =200A/µs
V
Tj = 25°C
Tj = 125°C
Tc = 80°C
Unit
100
500
Tj = 125°C
100
1.6
2
1.3
Tj = 25°C
160
Tj = 125°C
Tj = 25°C
220
290
Tj = 125°C
1530
µA
A
2
V
April, 2009
VRRM
Test Conditions
ns
nC
CR1 & CR4 are IGBT protection diodes only
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2-5
APTGF90DH60T3G – Rev 0
Symbol Characteristic
APTGF90DH60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
Min
Typ
Max
0.3
0.55
Unit
T25 = 298.15 K
TC=100°C
RT =
R25
T: Thermistor temperature
1 ⎞⎤ RT: Thermistor value at T
⎡
⎛ 1
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGF90DH60T3G – Rev 0
28
17
1
April, 2009
SP3 Package outline (dimensions in mm)
APTGF90DH60T3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
200
200
150
TJ=125°C
120
IC (A)
IC (A)
160
TJ = 125°C
175
TJ=25°C
VGE=15V
VGE=20V
VGE=12V
125
100
80
75
VGE=9V
50
40
25
0
0
0
0.5
1
1.5
2
VCE (V)
2.5
3
3.5
0
5
VCE = 300V
VGE = 15V
RG = 2.2 Ω
TJ = 125°C
175
4
150
E (mJ)
IC (A)
125
100
75
TJ=125°C
50
3
VCE (V)
4
5
3
Eoff
2
Eon
1
TJ=25°C
25
2
Energy losses vs Collector Current
Transfert Characteristics
200
1
0
0
5
6
7
8
9
10
11
0
12
25
50
75
100 125 150 175 200
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
3.5
Reverse Safe Operating Area
250
Eoff
3
200
2
IC (A)
E (mJ)
2.5
1.5
150
100
1
Eon
0.5
VGE=15V
TJ=125°C
RG=2.2 Ω
50
VCE = 300V ; VGE =15V
IC = 100A ; TJ = 125°C
0
0
0
2
4
6
8
Gate Resistance (ohms)
10
0
100
200
300
400
500
600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.2
0.15
0.1
0.05
0.9
IGBT
0.7
April, 2009
0.3
0.25
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
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1
10
4-5
APTGF90DH60T3G – Rev 0
Thermal Impedance (°C/W)
0.35
APTGF90DH60T3G
VCE=300V
D=50%
RG=2.2Ω
TJ=125°C
TC=75°C
200
150
150
TJ=125°C
ZCS
100
50
50
0
0
25
0.4
50
75
IC (A)
100
125
150
0
0.3
0.6
0.9 1.2
VF (V)
1.5
1.8
2.1
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.6
0.5
100
TJ=25°C
ZVS
hard
switching
0
Thermal Impedance (°C/W)
Forward Characteristic of diode
200
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
250
Diode
0.9
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0.0001
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGF90DH60T3G – Rev 0
April, 2009
0
0.00001
Single Pulse
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