Integral IN74HCT02AD Quad 2-input nor gate (high-performance silicon-gate cmos) Datasheet

TECHNICAL DATA
IN74HCT02A
Quad 2-Input NOR Gate
High-Performance Silicon-Gate CMOS
The IN74HCT02A is identical in pinout to the LS/ALS02. The
IN74HCT02A may be used as a level converter for interfacing TTL or
NMOS outputs to High Speed CMOS inputs.
• TTL/NMOS Compatible Input Levels
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 4.5 to 5.5 V
• Low Input Current: 1.0 µA
ORDERING INFORMATION
IN74HCT02AN Plastic
IN74HCT02AD SOIC
TA = -55° to 125° C for all packages
LOGIC DIAGRAM
PIN ASSIGNMENT
FUNCTION TABLE
Inputs
PIN 14 =VCC
PIN 7 = GND
Output
A
B
Y
L
L
H
L
H
L
H
L
L
H
H
L
15
IN74HCT02A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +7.0
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-1.5 to VCC +1.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Input Current, per Pin
±20
mA
IOUT
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±50
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
-65 to +150
°C
260
°C
VOUT
IIN
Tstg
TL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time (Figure 1)
Min
Max
Unit
4.5
5.5
V
0
VCC
V
-55
+125
°C
0
500
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range
GND≤(VIN or VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC).
Unused outputs must be left open.
16
IN74HCT02A
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
VCC
V
25 °C
to
-55°C
≤85
°C
≤125
°C
Unit
VOUT=0.1 V
IOUT≤ 20 µA
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
Maximum Low Level Input Voltage
VOUT=0.1 V or VCC-0.1 V
IOUT ≤ 20 µA
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
Minimum High-Level
Output Voltage
VIN= VIL
IOUT ≤ 20 µA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
VIN= VIL
IOUT ≤ 4.0 mA
4.5
3.98
3.84
3.7
VIN=VIH or VIL
IOUT ≤ 20 µA
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
VIN=VIH or VIL
IOUT ≤ 4.0 mA
4.5
0.26
0.33
0.4
Symbol
Parameter
VIH
Minimum High-Level
Input Voltage
VIL
VOH
VOL
Guaranteed Limit
Maximum Low-Level
Output Voltage
Test Conditions
V
IIN
Maximum Input
Leakage Current
VIN=VCC or GND
5.5
±0.1
±1.0
±1.0
µA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN=VCC or GND
IOUT=0µA
5.5
1.0
10
40
µA
∆ICC
Additional Quiescent
Supply Current
VIN = 2.4 V, Any One Input
VIN=VCC or GND, Other
Inputs
≥-55°C
25°C to
125°C
mA
2.9
2.4
IOUT=0µA
5.5
17
IN74HCT02A
AC ELECTRICAL CHARACTERISTICS(VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=6.0 ns)
Guaranteed Limit
Symbol
Parameter
25 °C
to
-55°C
≤85°C
≤125°C
Unit
tPLH, tPHL
Maximum Propagation Delay, Input A or B to
Output Y (Figures 1 and 2)
16
20
24
ns
tTLH, tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
15
19
22
ns
Maximum Input Capacitance
10
10
10
pF
CIN
Power Dissipation Capacitance (Per Gate)
CPD
Typical @25°C,VCC=5.0 V
Used to determine the no-load dynamic power
consumption:
PD=CPDVCC2f+ICCVCC
Figure 1. Switching Waveforms
EXPANDED LOGIC DIAGRAM
(1/4 of the Device)
18
25
pF
Figure 2. Test Circuit
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