ON NTJS3157NT1G Trench power mosfet 20 v, 4.0 a, single n−channel, sc−88 Datasheet

NTJS3157N
Trench Power MOSFET
20 V, 4.0 A, Single N−Channel, SC−88
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life
• Fast Switching for Increased Circuit Efficiency
• SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board
•
Utilization, Same as SC−70−6
Pb−Free Packages are Available
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V(BR)DSS
RDS(on) Typ
ID Max
45 mW @ 4.5 V
20 V
4.0 A
55 mW @ 2.5 V
70 mW @ 1.8 V
Applications
• DC−DC Conversion
• Low Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
SC−88 (SOT−363)
D
1
6
D
D
2
5
D
G
3
4
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
3.2
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C
TA = 85 °C
2.3
t≤5s
TA = 25 °C
4.0
Steady
State
TA = 25 °C
Top View
PD
1.0
W
IDM
10
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
1.6
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
MARKING DIAGRAM &
PIN ASSIGNMENT
D
1
SOT−363
CASE 419B
STYLE 28
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State
RqJA
125
°C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
80
Junction−to−Lead – Steady State
RqJL
45
February, 2006 − Rev. 2
T92 M G
G
1
D
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2006
T92
M
G
S
6
D
THERMAL RESISTANCE RATINGS (Note 1)
D
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTJS3157N/D
NTJS3157N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
12
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 16 V
V
mV/°C
TJ = 25°C
1.0
TJ = 85°C
5.0
VDS = 0 V, VGS = ±8.0 V
±100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
0.40
V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
−4.0
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 4.0 A
45
60
Forward Transconductance
gFS
mV/°C
mW
VGS = 2.5 V, ID = 3.6 A
55
70
VGS = 1.8 V, ID = 2.0 A
70
85
VGS = 10 V, ID = 3.2 A
9.0
S
500
pF
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 10 V
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
75
60
15
nC
6.0
15
ns
12
25
21
45
11
25
0.7
1.0
6.9
VGS = 4.5 V, VDS = 10 V,
ID = 3.2 A
1.0
1.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDD = 10 V,
ID = 0.5 A, RG = 6.0 W
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Charge
VGS =0 V,
IS = 1.6 A
TJ = 25°C
15
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 1.6 A
QRR
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2
ns
12
3.0
5.0
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
V
nC
NTJS3157N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
12
1.6 V
6
1.4 V
4
2
1.2 V
0.8 V
1V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
8
VDS ≥ 10 V
VGS = 1.8 V
8V
4V
2V
1
2
3
4
5
6
7
9
8
8
6
4
10
TJ = 125°C
2.5
1.5
0.5
1
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 4 A
TJ = 25°C
0.2
0.15
0.1
0.05
0
3
5
7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0
0.1
TJ = 25°C
0.08
0.07
VGS = 1.8 V
0.06
0.05
VGS = 2.5 V
0.04
VGS = 4.5 V
0.03
1
3
4
6
7
5
ID, DRAIN CURRENT (AMPS)
2
10000
ID = 4.0 A
VGS = 4.5 V
9
VGS = 0 V
TJ = 150°C
1.4
1.2
1000
1
TJ = 100°C
0.8
0.6
−50
8
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
3
0.09
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
25°C
TJ = −55°C
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.25
1
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
10
−25
0
25
50
75
100
125
150
100
2
4
6
8
10
12
14
16
18
20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTJS3157N
VDS = 0 V
C, CAPACITANCE (pF)
1200
VGS = 0 V
TJ = 25°C
Ciss
1000
800
600
Ciss
Crss
400
200
0
8
Coss
Crss
4
VGS
0
VDS
4
8
12
16
20
5
4
VDS
6
QGS
2
0
td(on)
1
1
10
2
ID = 3.2 A
TJ = 25°C
1
0
6
tf
tr
10
4
3
5
2
4
6
Qg, TOTAL GATE CHARGE (nC)
7
8
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
td(off)
QGD
1
Figure 7. Capacitance Variation
VDS = 10 V
ID = 0.5 A
VGS = 4.5 V
8
VGS
3
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
100
10
QG(TOT)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1400
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 0 V
TJ = 25°C
5
4
3
2
1
0
0.2
100
0.3
RG, GATE RESISTANCE (OHMS)
0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
1
NTJS3157N
ORDERING INFORMATION
Device
NTJS3157NT1
NTJS3157NT1G
NTJS3157NT2
NTJS3157NT2G
NTJS3157NT4
NTJS3157NT4G
Package
Shipping†
SC−88
3000 Tape & Reel
SC−88
(Pb−Free)
3000 Tape & Reel
SC−88
3000 Tape & Reel
SC−88
(Pb−Free)
3000 Tape & Reel
SC−88
10,000 Tape & Reel
SC−88
(Pb−Free)
10,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTJS3157N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.95
1.10
A1 0.00
0.05
0.10
A3
0.20 REF
b
0.10
0.21
0.30
C
0.10
0.14
0.25
D
1.80
2.00
2.20
E
1.15
1.25
1.35
e
0.65 BSC
L
0.10
0.20
0.30
HE
2.00
2.10
2.20
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
A3
6
5
4
HE
C
−E−
1
2
3
L
b 6 PL
0.2 (0.008)
M
E
M
A
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
SOLDERING FOOTPRINT*
A1
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTJS3157N/D
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