IXYS IXGR50N60C2 Hiperfast igbt with diode c2-class high speed igbt Datasheet

HiPerFAST TM
IGBT with Diode
IXGR 50N60C2
IXGR 50N60C2D1
C2-Class High Speed IGBTs
VCES
IC25
VCE(sat)
tfi(typ)
= 600 V
= 75 A
= 2.7 V
= 48 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
75
A
IC110
TC = 110°C
36
A
ICM
TC = 25°C, 1 ms
300
A
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
ICM = 100
A
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
200
W
VISOL
50/60 Hz RMS, t = 1m
2500
V
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
5
g
300
°C
TJ
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 40 A, VGE = 15 V
Note 1
© 2004 IXYS All rights reserved
(ISOLATED TAB)
G = Gate
E = Emitter
C = Collector
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
= 250 µA, VCE = VGE
VGE(th)
ISOPLUS247
(IXGR)
3.0
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
5.0
V
650
5
µA
mA
±100
nA
2.7
1.8
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
V
V
DS99163(04/04)
IXGR 50N60C2
IXGR 50N60C2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
51
S
3700
290
pF
pF
Cres
50
pF
Qg
Qge
138
25
nC
nC
40
nC
18
ns
25
ns
gfs
Cies
Coes
IC = 40 A; VCE = 10 V,
Note 1
40
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
Inductive load, TJ = 25°°C
td(off)
IC = 40 A, VGE = 15 V
115 150
VCE = 480 V, RG = Roff = 2.0 Ω
ns
48
ns
Eoff
0.38
0.7 mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
18
25
1.4
170
60
0.74
ns
ns
mJ
ns
ns
mJ
0.15
0.62 K/W
K/W
tfi
Inductive load, TJ = 125°°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0 Ω
RthJC
RthCK
Reverse Diode (FRED)
Symbol
Test Conditions
VF
IF = 60 A, VGE = 0 V,
Note 1
IRM
t rr
ISOPLUS 247 Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 150°C
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
35
RthJC
2.1
1.4
V
8.3
A
ns
0.85 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGR 50N60C2
IXGR 50N60C2D1
Fig. 1. Output Characte ristics
@ 25 Deg. C
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
80
320
VGE = 15V
13V
11V
70
9V
60
50
40
6V
30
20
200
9V
160
120
7V
80
10
40
5V
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
6
7
8
9
10
V C E - Volts
V C E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. De pende nce of V CE(sat) on
Tem perature
80
1.2
VGE = 15V
13V
11V
9V
V GE = 15V
1.1
7V
VC E ( s a t )- Normalized
70
60
I C - Amperes
11V
240
7V
I C - Amperes
I C - Amperes
VGE = 15V
13V
280
50
40
6V
30
20
1.0
I C = 80A
0.9
I C = 40A
0.8
0.7
0.6
10
I C = 20A
5V
0
0.5
0.5
1
1.5
2
2.5
3
3.5
4
25
50
V CE - Volts
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
200
4.8
TJ = 25ºC
4.5
180
160
I C - Amperes
VC E - Volts
4.2
I C = 80A
40A
20A
3.9
3.6
3.3
140
120
100
80
60
3
TJ = 125ºC
25ºC
40
2.7
20
0
2.4
5
6
7
8
9
10 11 12
V G E - Volts
© 2004 IXYS All rights reserved
13 14 15 16 17
4
4.5
5
5.5
6
6.5
7
V G E - Volts
7.5
8
8.5
9
IXGR 50N60C2
IXGR 50N60C2D1
Fig. 8. Dependence of Turn-Off
Energy on RG
Fig. 7. Transconductance
70
3
TJ = 125ºC
VGE = 15V
VCE = 480V
2.7
TJ = 25ºC
125ºC
2.4
50
E o f f - milliJoules
g f s - Siemens
60
40
30
20
I C = 80A
2.1
1.8
1.5
1.2
I C = 40A
0.9
0.6
10
0.3
0
I C = 20A
0
0
20
40
60
80
100 120 140 160 180 200
2
4
6
8
I C - Amperes
Fig. 9. Dependence of Turn-Off
Energy on Ic
12
14
16
18
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
2.2
2.4
R G = 2Ω
R G = 10Ω - - - VGE = 15V
VCE = 480V
1.8
1.6
1.8
1.4
1.2
TJ = 125ºC
1
R G = 2Ω
R G = 10Ω - - - VGE = 15V
VCE = 480V
2.1
E o f f - milliJoules
2
E o f f - MilliJoules
10
R G - Ohms
0.8
0.6
TJ = 25ºC
I C = 80A
1.5
1.2
0.9
I C = 40A
0.6
0.4
0.3
0.2
I C = 20A
0
0
20
30
40
50
60
70
25
80
35
45
I C - Amperes
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
65
75
85
95
105 115 125
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on Ic
200
450
td(off)
tfi - - - - - -
400
Switching Time - nanoseconds
Switching Time - nanoseconds
55
TJ - Degrees Centigrade
TJ = 125ºC
VGE = 15V
VCE = 480V
350
300
250
200
I C = 20A
I C = 40A
150
I C = 80A
100
50
td(off)
tfi - - - - - -
180
R G = 2Ω
VGE = 15V
VCE = 480V
160
140
TJ = 125ºC
120
100
TJ = 25ºC
80
60
40
2
4
6
8
10
12
14
16
18
20
30
R G - Ohms
40
50
60
70
80
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXGR 50N60C2
IXGR 50N60C2D1
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
Fig. 14. Reverse-Bias
Safe Operating Area
90
200
td(off)
tfi - - - - - -
80
I C = 20A
R G = 2Ω
VGE = 15V
VCE = 480V
160
140
70
60
120
I C - Amperes
Switching Time - nanoseconds
180
I C = 80A
100
80
I C = 40A
60
40
50
40
30
TJ = 125º C
20
R G = 10Ω
dV/dT < 10V/ns
10
I C = 20A
20
0
25
35
45
55
65
75
85
95
105 115 125
100
200
300
TJ - Degrees Centigrade
V
500
600
- Volts
Fig. 16. Capacitance
Fig. 15. Gate Charge
16
10000
VCE = 300V
I C = 40A
I G = 10mA
12
f = 1 MHz
Capacitance - picoFarrads
14
VG E - Volts
400
CE
10
8
6
4
C ies
1000
C oes
100
2
C res
0
10
0
30
60
90
120
150
0
5
10
15
20
25
30
35
40
V C E - Volts
Q G - nanoCoulombs
Fig . 16. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0. 7 0
R ( t h ) J C - ºC / W
0. 6 0
0. 5 0
0. 4 0
0. 3 0
0. 2 0
0. 1 0
0. 0 0
1
10
10 0
Puls e W idth - millis ec onds
© 2004 IXYS All rights reserved
1 0 00
IXGR 50N60C2
IXGR 50N60C2D1
160
A
140
IF
4000
nC
120
80
TVJ= 100°C
VR = 300V
3000
TVJ= 25°C
60
IF=120A
IF= 60A
IF= 30A
Qr
100
TVJ=100°C
80
TVJ= 100°C
VR = 300V
A
IRM
2000
40
1000
20
IF=120A
IF= 60A
IF= 30A
TVJ=150°C
60
40
20
0
0
1
2
0
100
V
0
A/µs 1000
-diF/dt
VF
0
Fig. 19 Reverse recovery charge Qr
versus -diF/dt
Fig. 18 Forward current IF versus VF
140
2.0
trr
1.5
Kf
600 A/µs
800 1000
-diF/dt
20
1.6
V
VFR
15
µs
tfr
IF=120A
IF= 60A
IF= 30A
110
1.2
VFR
tfr
120
1.0
400
Fig. 20 Peak reverse current IRM
versus -diF/dt
TVJ= 100°C
VR = 300V
ns
130
200
10
0.8
5
0.4
IRM
100
0.5
Qr
90
0.0
80
0
40
80
120 °C 160
TVJ= 100°C
IF = 60A
0
0
200
400
600
TVJ
800 1000
A/µs
0
200
400
-diF/dt
Fig. 21 Dynamic parameters Qr, IRM
versus TVJ
Fig. 22 Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 23 Peak forward voltage VFR and
tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
4
ZthJC
0.01
Rthi (K/W)
ti (s)
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399
0.001
0.0001
0.00001
DSEP 2x61-06A
0.0001
0.001
0.01
s
0.1
1
t
Fig. 24 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
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