Fairchild FSQ0265RN Green mode fairchild power switch (fpsâ ¢) for valley switching converter - low emi and high efficiency Datasheet

FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311
Green Mode Fairchild Power Switch (FPS™) for
Valley Switching Converter - Low EMI and High Efficiency
Features
Description
„ Optimized for Valley Switching (VSC)
A Valley Switching Converter generally shows lower EMI
and higher power conversion efficiency than a
conventional hard-switched converter with a fixed
switching frequency. The FSQ-series is an integrated
Pulse-Width Modulation (PWM) controller and
SenseFET specifically designed for valley switching
operation with minimal external components. The PWM
controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout, Leading Edge
Blanking (LEB), optimized gate driver, internal soft-start,
temperature-compensated precise current sources for
loop compensation, and self-protection circuitry.
„ Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
„ High-Efficiency through Minimum Voltage Switching
„ Narrow Frequency Variation Range over Wide Load
and Input Voltage Variation
„ Advanced Burst-Mode Operation for Low Standby
Power Consumption
„ Pulse-by-Pulse Current Limit
„ Various Protection Functions: Overload Protection
„
„
„
„
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD)
Under-Voltage Lockout (UVLO) with Hysteresis
Internal Start-up Circuit
Internal High-Voltage SenseFET (650V)
Built-in Soft-Start (15ms)
Compared with discrete MOSFET and PWM controller
solutions, the FSQ-series reduces total cost, component
count, size and weight; while simultaneously increasing
efficiency, productivity, and system reliability. This device
provides a basic platform that is well suited for costeffective designs of valley switching fly-back converters.
Applications
„ Power Supply for DVP Player and DVD Recorder,
Set-Top Box
„ Adapter
„ Auxiliary Power Supply for PC, LCD TV, and PDP TV
Related Application Notes
„ AN-4137, AN-4141, AN-4147, AN-4150 (Flyback)
„ AN-4134 (Forward)
FPSTM is a trademark of Fairchild Semiconductor Corporation.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
September 2007
Product
Number(5)
PKG.
FSQ311
8-DIP
FSQ311L
8-LSOP
FSQ321
8-DIP
FSQ321L
8-LSOP
FSQ0165RN
8-DIP
FSQ0165RL 8-LSOP
FSQ0265RN
8-DIP
FSQ0265RL 8-LSOP
FSQ0365RN
8-DIP
FSQ0365RL 8-LSOP
Maximum Output Power(1)
Current
Limit
RDS(ON)
Max.
-40 to +85C
0.6A
-40 to +85°C
Operating
Temp.
230VAC±15%(2)
85-265VAC
Replaces
Devices
Adapter(3)
Open-Frame(4)
Adapter(3)
Open-Frame(4)
19Ω
7W
10W
6W
8W
FSDL321
FSDM311
0.6A
19Ω
8W
12W
7W
10W
FSDL321
FSDM311
-40 to +85°C
0.9A
10Ω
10W
15W
9W
13W
FSDL0165RN
-40 to +85°C
1.2A
6Ω
14W
20W
11W
16W
FSDM0265RN
FSDM0265RNB
-40 to +85°C
1.5A
4.5Ω
17.5W
25W
13W
19W
FSDM0365RN
FSDM0365RNB
Notes:
1. The junction temperature can limit the maximum output power.
2. 230VAC or 100/115VAC with doubler. The maximum power with CCM operation.
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
4. Maximum practical continuous power in an open-frame design at 50°C ambient.
5. Pb-free package per JEDEC J-STD-020B.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
2
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Ordering Information
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Typical Circuit
VO
AC
IN
Vstr
PWM
Sync
Drain
GND
Vcc
Vfb
FSQ0365RN Rev.00
Figure 1. Typical Flyback Application
Internal Block Diagram
Sync
4
Vstr
Vcc
5
2
Drain
6 7
8
+
OSC
0.7V/0.2V
+
+
Vref
VCC
Idelay
Vfb
3
0.35/0.55
VBurst
Vref
VCC good
-
8V/12V
IFB
PWM
3R
R
SoftStart
S
LEB
200ns
Q
Gate
driver
R Q
AOCP
VSD
6V
Sync
Vovp
TSD
S
2.5μs time
delay
Q
1
VOCP
(1.1V)
GND
R Q
6V
VCC good
FSQ0365RN Rev.00
Figure 2. Functional Block Diagram
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
3
GND
D
Vcc
8-DIP
D
Vfb
8-LSOP
V
D
Sync
Vstr
FSQ0365RN Rev.01
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
Name
1
GND
SenseFET source terminal on primary side and internal control ground.
Vcc
Positive supply voltage input. Although connected to an auxiliary transformer winding, current
is supplied from pin 5 (Vstr) via an internal switch during startup (see Internal Block Diagram
Section). It is not until VCC reaches the UVLO upper threshold (12V) that the internal start-up
switch opens and device power is supplied via the auxiliary transformer winding.
Vfb
The feedback voltage pin is the non-inverting input to the PWM comparator. It has a 0.9mA
current source connected internally while a capacitor and optocoupler are typically connected
externally. There is a time delay while charging external capacitor Cfb from 3V to 6V using an
internal 5μA current source. This time delay prevents false triggering under transient conditions but still allows the protection mechanism to operate under true overload conditions.
4
Sync
This pin is internally connected to the sync-detect comparator for valley switching. Typically the
voltage of the auxiliary winding is used as Sync input voltage and external resistors and capacitor are needed to make time delay to match valley point. The threshold of the internal sync
comparator is 0.7V/0.2V.
5
Vstr
This pin is connected to the rectified AC line voltage source. At start-up the internal switch supplies internal bias and charges an external storage capacitor placed between the Vcc pin and
ground. Once the Vcc reaches 12V, the internal switch is opened.
6,7,8
Drain
The drain pins are designed to connect directly to the primary lead of the transformer and are
capable of switching a maximum of 700V. Minimizing the length of the trace connecting these
pins to the transformer will decrease leakage inductance.
2
3
Description
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
4
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Pin Configuration
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Characteristic
Min.
Max.
Unit
VSTR
Vstr Pin Voltage
500
V
VDS
Drain Pin Voltage
650
V
VCC
Supply Voltage
VFB
Feedback Voltage Range
VSync
Sync Pin Voltage Range
IDM
Drain Current Pulsed(6)
20
V
-0.3
9.0
V
-0.3
9.0
V
FSQ0365
12
FSQ0265
8
FSQ0165
4
FSQ321/311
1.5
FSQ0365
230
FSQ0265
140
FSQ0165
50
EAS
Single Pulsed Avalanche Energy(7)
PD
Total Power Dissipation
TJ
Recommended Operating Junction Temperature
TA
FSQ321/311
TSTG
ESD
A
mJ
10
1.5
W
-40
Internally limited
°C
Operating Ambient Temperature
-40
85
°C
Storage Temperature
-55
150
°C
Human Body Model(8)
CLASS1 C
Machine Model(8)
CLASS B
Notes:
6. Repetitive rating: Pulse width limited by maximum junction temperature.
7. L=51mH, starting TJ=25°C.
8. Meets JEDEC standards JESD22-A114 and JESD22-A115.
Thermal Impedance
Symbol
Parameter
Value
Unit
8-DIP(9)
θJA(10)
Junction-to-Ambient Thermal Resistance
80
θJC(11)
Junction-to-Case Thermal Resistance
20
θJT(12)
Junction-to-Top Thermal Resistance
35
°C/W
Notes:
9. All items are tested with the standards JESD 51-2 and 51-10 (DIP).
10. Free-standing, with no heat-sink, under natural convection.
11. Infinite cooling condition - refer to the SEMI G30-88.
12. Measured on the package top surface.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
5
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Absolute Maximum Ratings
TA = 25°C unless otherwise specified.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
SenseFET Section
BVDSS
Drain Source Breakdown Voltage
VCC = 0V, ID = 100µA
IDSS
Zero-Gate-Voltage Drain Current
VDS = 560V
RDS(ON)
Drain-Source On-State
Resistance(13)
650
FSQ0365
3.5
4.5
FSQ0265
5.0
6.0
8.0
10.0
14.0
19.0
FSQ0165
TJ = 25°C, ID = 0.5A
FSQ321/311
CSS
Input Capacitance
FSQ0365
315
FSQ0265
550
FSQ0165
VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
FSQ0365
47
38
VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer
Capacitance
18
FSQ0365
9.0
FSQ0265
17.0
FSQ0165
VGS = 0V, VDS = 25V, f = 1MHz
Turn-On Delay Time
3.8
FSQ0365
11.2
FSQ0265
20.0
FSQ0165
VDD = 350V, ID = 25mA
Rise Time
9.5
FSQ0365
34
FSQ0265
15
FSQ0165
VDD = 350V, ID = 25mA
Turn-Off Delay Time
19
FSQ0365
28.2
FSQ0265
55.0
FSQ0165
VDD = 350V, ID = 25mA
Fall Time
33.0
FSQ0365
32
FSQ0265
25
FSQ0165
ns
30.0
FSQ321/311
tf
ns
4
FSQ321/311
td(off)
ns
12.0
FSQ321/311
tr
pF
10.0
FSQ321/311
td(on)
pF
25
FSQ321/311
CRSS
Ω
162
FSQ0265
FSQ0165
µA
pF
250
FSQ321/311
COSS
V
100
VDD = 350V, ID = 25mA
ns
10
FSQ321/311
42
Control Section
tON.MAX1
Maximum On Time1
tON.MAX2
Maximum On Time2
All but Q321
TJ = 25°C
10.5
12.0
13.5
µs
Q321
TJ = 25°C
6.35
7.06
7.77
µs
tB1
Blanking Time1
All but Q321
13.2
15.0
16.8
µs
tB2
Blanking Time2
Q321
7.5
8.2
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
µs
www.fairchildsemi.com
6
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
tW
Detection Time Window
Condition
Min. Typ. Max. Unit
TJ = 25°C, Vsync = 0V
3.0
µs
fS1
Initial Switching Freq.1
All but Q321
50.5
55.6
61.7
kHz
fS2
Initial Switching Freq.2
Q321
84.0
89.3
95.2
kHz
ΔfS
Switching Frequency Variation(14)
-25°C < TJ < 85°C
±5
±10
%
IFB
Feedback Source Current
VFB = 0V
700
900
1100
µA
Minimum Duty Cycle
VFB = 0V
0
%
11
12
13
V
8
9
DMIN
VSTART
VSTOP
UVLO Threshold Voltage
After turn-on
7
V
tS/S1
Internal Soft-Start Time1
All but Q321
With free-running frequency
15
ms
tS/S2
Internal Soft-Start Time2
Q321
With free-running frequency
10
ms
Burst Mode Section
VBURH
VBURL
TJ = 25°C, tPD = 200ns(15)
Burst-Mode Voltage
0.45
0.55
0.65
V
0.25
0.35
0.45
V
200
VBUR(HYS)
mV
Protection Section
ILIM
Peak Current Limit
FSQ0365
TJ = 25°C, di/dt = 240mA/µs
1.32
1.50
1.68
FSQ0265
TJ = 25°C, di/dt = 200mA/µs
1.06
1.20
1.34
FSQ0165
TJ = 25°C, di/dt = 175mA/µs
0.8
0.9
1.0
FSQ321
TJ = 25°C, di/dt = 125mA/µs
0.53
0.60
0.67
TJ = 25°C, di/dt = 112mA/µs
0.53
0.60
0.67
Shutdown Feedback Voltage
VCC = 15V
5.5
6.0
6.5
V
Shutdown Delay Current
VFB = 5V
5
6
µA
FSQ311
VSD
IDELAY
A
tLEB
Leading-Edge Blanking Time(14)
VOVP
Over-Voltage Protection
tOVP
Over-Voltage Protection Blanking Time
TSD
Thermal Shutdown Temperature(14)
4
200
VCC = 15V, VFB = 2V
ns
5.5
6.0
6.5
V
2
3
4
µs
125
140
155
°C
0.55
0.70
0.85
V
0.14
0.20
0.26
V
Sync Section
VSH
VSL
tSync
Sync Threshold Voltage
Sync Delay
Time(14)(16)
300
ns
Total Device Section
IOP
ISTART
ICH
VSTR
Oper. Supply Current (Control Part Only)
VCC = 15V
1
3
5
mA
Start Current
VCC = VSTART - 0.1V
(before VCC reaches VSTART)
270
360
450
µA
Start-up Charging Current
VCC = 0V, VSTR = min. 40V
0.65
0.85
1.00
mA
Minimum VSTR Supply Voltage
26
V
Notes:
13. Pulse test: Pulse-Width=300μs, duty=2%
14. Though guaranteed, it is not 100% tested in production.
15. Propagation delay in the control IC.
16. Includes gate turn-on time.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
7
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Electrical Characteristics (Continued)
Function
FSDM0x65RNB
FSQ-Series
Operation method
Constant frequency
PWM
Valley switching
operation
EMI reduction
Frequency
modulation
Valley switching &
inherent frequency
modulation
FSQ-Series Advantages
„ Improved efficiency by valley switching
„ Reduced EMI noise
„ Reduce EMI noise by two ways
„ Improved standby power by valley switch-
Burst-mode operation Fixed burst peak
Protection
ing also in burst-mode
Advanced burst-mode „ Because the current peak during burst
operation is dependent on VFB, it is easier
to solve audible noise
„ Improved reliability through precise abnor-
AOCP
mal over-current protection
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
8
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Comparison Between FSDM0x65RNB and FSQ-Series
1.2
1.2
1.0
1.0
Normalized
Normalized
These characteristic graphs are normalized at TA= 25°C.
0.8
0.6
0.4
0.2
0.0
-25
0.8
0.6
0.4
0.2
0
25
50
75
100
0.0
-25
125
0
Temperature [°C]
1.2
1.2
1.0
1.0
0.8
0.6
0.4
0.2
100
125
0.6
0.4
0.2
0
25
50
75
100
0.0
-25
125
0
25
50
75
100
125
Temperature [°C]
Figure 6. UVLO Stop Threshold Voltage (VSTOP)
vs. TA
Figure 7. Start-up Charging Current (ICH) vs. TA
1.2
1.2
1.0
1.0
Normalized
Normalized
75
0.8
Temperature [°C]
0.8
0.6
0.4
0.2
0.0
-25
50
Figure 5. UVLO Start Threshold Voltage (VSTART)
vs. TA
Normalized
Normalized
Figure 4. Operating Supply Current (IOP) vs. TA
0.0
-25
25
Temperature [°C]
0.8
0.6
0.4
0.2
0
25
50
75
100
0.0
-25
125
Temperature [°C]
25
50
75
100
125
Temperature [°C]
Figure 8. Initial Switching Frequency (fS) vs. TA
Figure 9. Maximum On Time (tON.MAX) vs. TA
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
0
www.fairchildsemi.com
9
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Typical Performance Characteristics
1.2
1.2
1.0
1.0
Normalized
Normalized
These characteristic graphs are normalized at TA= 25°C.
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0.0
-25
0
25
50
75
100
0.0
-25
125
0
Temperature [°C]
1.2
1.2
1.0
1.0
0.8
0.6
0.4
100
125
0.8
0.6
0.4
0
25
50
75
100
0.0
-25
125
0
25
50
75
100
125
Temperature [°C]
Temperature [°C]
Figure 12. Shutdown Delay Current (IDELAY) vs. TA
Figure 13. Burst-Mode High Threshold Voltage
(Vburh) vs. TA
1.2
1.2
1.0
1.0
Normalized
Normalized
75
0.2
0.2
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0.2
0.0
-25
50
Figure 11. Feedback Source Current (IFB) vs. TA
Normalized
Normalized
Figure 10. Blanking Time (tB) vs. TA
0.0
-25
25
Temperature [°C]
0
25
50
75
100
0.0
-25
125
Figure 14. Burst-Mode Low Threshold Voltage
(Vburl) vs. TA
25
50
75
100
125
Figure 15. Peak Current Limit (ILIM) vs. TA
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
0
Temperature [°C]
Temperature [°C]
www.fairchildsemi.com
10
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Typical Performance Characteristics (Continued)
1.2
1.2
1.0
1.0
Normalized
Normalized
These characteristic graphs are normalized at TA= 25°C.
0.8
0.6
0.4
0.2
0.0
-25
0.8
0.6
0.4
0.2
0
25
50
75
100
0.0
-25
125
0
Temperature [°C]
50
75
100
125
Figure 17. Sync Low Threshold Voltage (VSL) vs. TA
1.2
1.2
1.0
1.0
Normalized
Normalized
Figure 16. Sync High Threshold Voltage (VSH) vs. TA
0.8
0.6
0.4
0.2
0.0
-25
25
Temperature [°C]
0.8
0.6
0.4
0.2
0
25
50
75
100
0.0
-25
125
Temperature [°C]
25
50
75
100
125
Temperature [°C]
Figure 18. Shutdown Feedback Voltage (VSD) vs. TA
Figure 19. Over-Voltage Protection (VOP) vs. TA
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
0
www.fairchildsemi.com
11
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Typical Performance Characteristics (Continued)
2.2 Leading Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the Rsense
resistor would lead to incorrect feedback operation in the
current mode PWM control. To counter this effect, the
FPS employs a leading edge blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
(tLEB) after the SenseFET is turned on.
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (Ca) connected to the Vcc pin, as
illustrated in Figure 20. When VCC reaches 12V, the FPS
begins switching and the internal high-voltage current
source is disabled. The FPS continues its normal
switching operation and the power is supplied from the
auxiliary transformer winding unless VCC goes below the
stop voltage of 8V.
Vref
VCC
Idelay
VDC
VFB
VO
3
FOD817A
Ca
D2
3R
+
VFB*
KA431
VCC
5
FSQ0365RN Rev.00
OLP
Rsense
FSQ0365RN Rev. 00
Figure 21. Pulse-Width-Modulation (PWM) Circuit
3. Synchronization: The FSQ-series employs a valley
switching technique to minimize the switching noise and
loss. The basic waveforms of the valley switching
converter are shown in Figure 22. To minimize the
MOSFET's switching loss, the MOSFET should be
turned on when the drain voltage reaches its minimum
value, as shown in Figure 22. The minimum drain
voltage is indirectly detected by monitoring the VCC
winding voltage, as shown in Figure 22.
Internal
Bias
Figure 20. Start-up Circuit
2. Feedback Control: FPS employs current mode
control, as shown in Figure 21. An opto-coupler (such as
the FOD817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across
the RSENSE resistor makes it possible to control the
switching duty cycle. When the reference pin voltage of
the shunt regulator exceeds the internal reference
voltage of 2.5V, the opto-coupler LED current increases,
thus pulling down the feedback voltage and reducing the
duty cycle. This event typically happens when the input
voltage is increased or the output load is decreased.
Vds
VRO
VRO
VDC
tF
Vsync
Vovp (6V)
2.1 Pulse-by-Pulse Current Limit: Because current
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 21. Assuming
that the 0.9mA current source flows only through the
internal resistor (3R + R = 2.8k), the cathode voltage of
diode D2 is about 2.5V. Since D1 is blocked when the
feedback voltage (VFB) exceeds 2.5V, the maximum
voltage of the cathode of D2 is clamped at this voltage,
thus clamping VFB*. Therefore, the peak value of the
current through the SenseFET is limited.
0.7V
0.2V
300ns Delay
MOSFET Gate
ON
ON
FSQ0365RN Rev.00
Figure 22. Valley Resonant Switching Waveforms
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
-
VSD
Vref
VCC good
Gate
driver
R
Vstr
ICH
8V/12V
SenseFET
OSC
D1
CB
2
IFB
www.fairchildsemi.com
12
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Functional Description
voltage. If the output consumes more than this maximum
power, the output voltage (VO) decreases below the set
voltage. This reduces the current through the optocoupler LED, which also reduces the opto-coupler
transistor current, thus increasing the feedback voltage
(VFB). If VFB exceeds 2.8V, D1 is blocked and the 5µA
current source starts to charge CB slowly up to VCC. In
this condition, VFB continues increasing until it reaches
6V, when the switching operation is terminated, as
shown in Figure 24. The delay time for shutdown is the
time required to charge CB from 2.8V to 6V with 5µA. A
20 ~ 50ms delay time is typical for most applications.
VFB
FSQ0365RN Rev.00
Overload protection
6.0V
2.8V
VDS
Power
on
Fault
occurs
t12= CFB*(6.0-2.8)/Idelay
Fault
removed
t1
t2
t
Figure 24. Overload Protection
4.2 Abnormal Over-Current Protection (AOCP): When
the secondary rectifier diodes or the transformer pins are
shorted, a steep current with extremely high-di/dt can
flow through the SenseFET during the LEB time. Even
though the FSQ-series has OLP (Overload Protection), it
is not enough to protect the FSQ-series in that abnormal
case, since severe current stress is imposed on the
SenseFET until OLP triggers. The FSQ-series has an
internal AOCP (Abnormal Over-Current Protection)
circuit as shown in Figure 25. When the gate turn-on
signal is applied to the power SenseFET, the AOCP
block is enabled and monitors the current through the
sensing resistor. The voltage across the resistor is
compared with a preset AOCP level. If the sensing
resistor voltage is greater than the AOCP level, the set
signal is applied to the latch, resulting in the shutdown of
the SMPS.
VCC
12V
8V
t
Fault
situation
Normal
operation
Figure 23. Auto Restart Protection Waveforms
4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding its normal level due to an
unexpected abnormal event. In this situation, the
protection circuit should trigger to protect the SMPS.
However, even when the SMPS is in the normal
operation, the overload protection circuit can be
triggered during the load transition. To avoid this
undesired operation, the overload protection circuit is
designed to trigger only after a specified time to
determine whether it is a transient situation or a true
overload situation. Because of the pulse-by-pulse
current limit capability, the maximum peak current
through the Sense FET is limited, and therefore the
maximum input power is restricted with a given input
3R
OSC
PWM
LEB
200ns
S
Q
R
Q
Gate
driver
R
Rsense
AOCP
FSQ0365RN Rev.00
-
Normal
operation
+
FSQ0365RN Rev. 00
1
GND
VOCP
Figure 25. Abnormal Over-Current Protection
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
13
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
4. Protection Circuits: The FSQ-series has several
self-protective functions, such as Overload Protection
(OLP), Abnormal Over-Current protection (AOCP), OverVoltage Protection (OVP), and Thermal Shutdown
(TSD). All the protections are implemented as autorestart mode. Once the fault condition is detected,
switching is terminated and the SenseFET remains off.
This causes VCC to fall. When VCC falls down to the
Under-Voltage Lockout (UVLO) stop voltage of 8V, the
protection is reset and start-up circuit charges VCC
capacitor. When the VCC reaches the start voltage of
12V, the FSQ-series resumes normal operation. If the
fault condition is not removed, the SenseFET remains off
and VCC drops to stop voltage again. In this manner, the
auto-restart can alternately enable and disable the
switching of the power SenseFET until the fault condition
is eliminated. Because these protection circuits are fully
integrated into the IC without external components, the
reliability is improved without increasing cost.
VO
VOset
VFB
0.55V
0.35V
IDS
VDS
time
4.4 Thermal Shutdown (TSD): The SenseFET and the
control IC are built in one package. This makes it easy
for the control IC to detect the abnormal over
temperature of the SenseFET. If the temperature
exceeds ~150°C, the thermal shutdown triggers.
FSQ0365RN Rev.00
t2 t3
Switching
disabled
t4
Figure 26. Waveforms of Burst Operation
7. Switching Frequency Limit: To minimize switching
loss and EMI (Electromagnetic Interference), the
MOSFET turns on when the drain voltage reaches its
minimum value in valley switching operation. However,
this causes switching frequency to increases at light load
conditions. As the load decreases, the peak drain current
diminishes and the switching frequency increases. This
results in severe switching losses at light-load condition,
as well as intermittent switching and audible noise.
Because of these problems, the valley switching
converter topology has limitations in a wide range of
applications.
5. Soft-Start: The FPS has an internal soft-start circuit
that increases PWM comparator inverting input voltage
with the SenseFET current slowly after it starts up. The
typical soft-start time is 15ms, The pulse width to the
power switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. The voltage on the output
capacitors is progressively increased with the intention of
smoothly establishing the required output voltage. This
mode helps prevent transformer saturation and reduces
stress on the secondary diode during startup.
To overcome this problem, FSQ-series employs a
frequency-limit function, as shown in Figures 27 and 28.
Once the SenseFET is turned on, the next turn-on is
prohibited during the blanking time (tB). After the
blanking time, the controller finds the valley within the
detection time window (tW) and turns on the MOSFET, as
shown in Figures 27 and 28 (Cases A, B, and C). If no
valley is found during tW, the internal SenseFET is forced
to turn on at the end of tW (Case D). Therefore, our
devices have a minimum switching frequency of 55kHz
and a maximum switching frequency of 67kHz, as shown
in Figure 28.
6. Burst Operation: To minimize power dissipation in
standby mode, the FPS enters burst-mode operation. As
the load decreases, the feedback voltage decreases. As
shown in Figure 26, the device automatically enters
burst-mode when the feedback voltage drops below
VBURL (350mV). At this point, switching stops and the
output voltages start to drop at a rate dependent on
standby current load. This causes the feedback voltage
to rise. Once it passes VBURH (550mV), switching
resumes. The feedback voltage then falls and the
process repeats. Burst-mode operation alternately
enables and disables switching of the power SenseFET,
thereby reducing switching loss in standby mode.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
t1
Switching
disabled
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14
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
4.3 Over-Voltage Protection (OVP): If the secondary
side feedback circuit malfunctions or a solder defect
causes an opening in the feedback path, the current
through the opto-coupler transistor becomes almost
zero. Then, VFB climbs up in a similar manner to the
overload situation, forcing the preset maximum current
to be supplied to the SMPS until the overload protection
triggers. Because more energy than required is provided
to the output, the output voltage may exceed the rated
voltage before the overload protection triggers, resulting
in the breakdown of the devices in the secondary side.
To prevent this situation, an OVP circuit is employed. In
general, the peak voltage of the sync signal is
proportional to the output voltage and the FSQ-series
uses a sync signal instead of directly monitoring the
output voltage. If the sync signal exceeds 6V, an OVP is
triggered, shutting down the SMPS. To avoid undesired
triggering of OVP during normal operation, the peak
voltage of the sync signal should be designed below 6V.
67kHz
IDS
IDS
A
59kHz
55kHz
A
B
C
Constant
frequency
D
tB=15μs
Burst
mode
ts
IDS
IDS
B
PO
FSQ0365RN Rev. 00
tB=15μs
Figure 28. Switching Frequency Range
ts
IDS
IDS
C
tB=15μs
ts
IDS
IDS
tB=15μs
tsmax=18μs
D
tW=3μs
FSQ0365RN Rev. 00
Figure 27. Valley Switching with Limited Frequency
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
15
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
When the resonant period is 2μs
tsmax=18μs
Application
Input Voltage
Range
FPS Device
DVD Player
Power Supply
FSQ0365RN
Rated Output Power
Output Voltage
(Max. Current)
19W
5.1V (1.0A)
3.4V (1.0A)
12V (0.4A)
16V (0.3A)
85-265VAC
Features
„ High efficiency ( >77% at universal input)
„ Low standby mode power consumption (<1W at 230VAC input and 0.5W load)
„ Reduce EMI noise through Valley Switching operation
„ Enhanced system reliability through various protection functions
„ Internal soft-start (15ms)
Key Design Notes
„ The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of
OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms).
„ The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input
voltage can be adjusted.
„ The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pulsating noises and to improved surge immunity.
1. Schematic
C209
47pF
T101
EER2828
RT101
5D-9
1
R105
100kΩ
C104
10nF
630V
R102
56kΩ
C103
33μF
400V
1
BD101
Bridge
Diode
3
4
3
4
C102
100nF,275VAC
Sync
8
Drain
7
Drain
6
Drain
FB
Vcc
Vstr
C105
47nF
50V
GND
1
12V, 0.4A
3
10 D202
UF4003
L203
D102
1N 4004 R104
12kΩ
4
C205
1000μF
10V
C206
1000μF
10V
L204
5
9
3.4V, 1A
D204
SB360
D103
1N4148
C110
33pF
50V
5.1V, 1A
D203
SB360
C208
1000μF
10V
C207
1000μF
10V
8
C302
3.3nF
C101
100nF
275VAC
TNR
10D471K
C204
470μF
35V
6
R103
5Ω
R106 R107
6.2kΩ 6.2kΩ
LF101
40mH
C203
470μF
35V
12
C106 C107
100nF 22μF
2 SMD 50V
ZD101
1N4746A
C202
470μF
35V
C201
470μF
35V
L202
D101
1N 4007
IC101
FSQ0365RN
5
16V, 0.3A
D201
UF4003
C210
47pF
2
R108
62Ω
2
L201
11
R201
510Ω
R203
6.2kΩ
R202
1kΩ
R204
20kΩ
C209
100nF
IC202
FOD817A
F101
FUSE
IC201
KA431
AC IN
R205
6kΩ
FSQ0365RN Rev:00
Figure 29. Demo Circuit of FSQ0365RN
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
16
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Typical Application Circuit of FSQ0365RN
EER2828
12
1
Np/2
Np/2
11
N16V
Np/2 2
3
Na 4
10
N12V
N12V
9 N
3.4V
Na
8
5
N16V
N5.1V
6mm
3mm
N3.4V
7
Np/2
6 N
5.1V
FSQ0365RN Rev: 00
Figure 30. Transformer Schematic Diagram of FSQ0365RN
3. Winding Specification
No
Pin (s→f)
Wire
0.25φ
3→2
Np/2
Turns
×1
Winding Method
50
Center Solenoid Winding
4
Center Solenoid Winding
2
Center Solenoid Winding
16
Center Solenoid Winding
14
Center Solenoid Winding
18
Center Solenoid Winding
50
Center Solenoid Winding
Insulation: Polyester Tape t = 0.050mm, 2 Layers
0.33φ × 2
9→8
N3.4V
Insulation: Polyester Tape t = 0.050mm, 2 Layers
0.33φ × 1
6→9
N5V
Insulation: Polyester Tape t = 0.050mm, 2 Layers
0.25φ × 1
4→5
Na
Insulation: Polyester Tape t = 0.050mm, 2 Layers
N12V
0.33φ × 3
10 → 12
Insulation: Polyester Tape t = 0.050mm, 3 Layers
N16V
0.33φ × 3
11 → 12
Insulation: Polyester Tape t = 0.050mm, 2 Layers
0.25φ × 1
2→1
Np/2
Insulation: Polyester Tape t = 0.050mm, 2 Layers
4. Electrical Characteristics
Pin
Specification
Remarks
Inductance
1-3
1.4mH ± 10%
100kHz, 1V
Leakage
1-3
25µH Max.
Short all other pins
5. Core & Bobbin
„ Core: EER2828 (Ae=86.66mm2)
„ Bobbin: EER2828
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
17
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
2. Transformer
Part
Value
Note
Part
Value
Note
Resistor
Inductor
R102
56kΩ
1W
L201
10µH
R103
5Ω
1/2W
L202
10µH
R104
12kΩ
1/4W
L203
4.9µH
R105
100kΩ
1/4W
L204
4.9µH
R106
6.2kΩ
1/4W
R107
6.2kΩ
1/4W
Diode
D101
IN4007
R108
62Ω
1W
D102
IN4004
R201
510Ω
1/4W
ZD101
1N4746A
R202
1kΩ
1/4W
D103
1N4148
R203
6.2kΩ
1/4W
D201
UF4003
R204
20kΩ
1/4W
D202
UF4003
R205
6kΩ
1/4W
D203
SB360
D204
SB360
Capacitor
C101
100nF/275VAC
Box Capacitor
C102
100nF/275VAC
Box Capacitor
C103
33µF/400V
Electrolytic Capacitor
IC101
FSQ0365RN
FPS™
C104
10nF/630V
Film Capacitor
IC201
KA431 (TL431)
Voltage reference
C105
47nF/50V
Mono Capacitor
IC202
FOD817A
Opto-coupler
C106
100nF/50V
SMD (1206)
C107
22µF/50V
Electrolytic Capacitor
Fuse
2A/250V
C110
33pF/50V
Ceramic Capacitor
C201
470µF/35V
Electrolytic Capacitor
C202
470µF/35V
Electrolytic Capacitor
C203
470µF/35V
Electrolytic Capacitor
C204
470µF/35V
Electrolytic Capacitor
C205
1000µF/10V
Electrolytic Capacitor
C206
1000µF/10V
Electrolytic Capacitor
C207
1000µF/10V
Electrolytic Capacitor
C208
1000µF/10V
Electrolytic Capacitor
C209
100nF /50V
Ceramic Capacitor
IC
Fuse
NTC
RT101
5D-9
BD101
2KBP06M2N257
Bridge Diode
Line Filter
LF101
40mH
Transformer
T101
Varistor
TNR
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
Bridge Diode
10D471K
www.fairchildsemi.com
18
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
6. Demo Board Part List
Application
Input Voltage
Range
FPS Device
DVD Player
Power Supply
FSQ311
Rated Output Power
Output Voltage
(Max. Current)
8W
5.1V (0.9A)
3.3V (0.9A)
12V (0.03A)
16V (0.03A)
85-265VAC
Features
„ High efficiency ( >70% at universal input)
„ Low standby mode power consumption (<1W at 230VAC input and 0.5W load)
„ Reduce EMI noise through Valley Switching operation
„ Enhanced system reliability through various protection functions
„ Internal soft-start (15ms)
Key Design Notes
„ The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of
OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms).
„ The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input
voltage can be adjusted.
„ The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pulsating noises and to improved surge immunity.
1. Schematic
C1
4.7nF
D2
1N4007
D3
1N4007
L2
660μH
C6
10μF
400V
RS6
200Ω
C7
10μF
400V
5
4
3
C17
47nF
50V
Vstr
Sync
Vfb
8
Drain
7
Drain
6
Drain
Vcc 2
2
11
3
10
-12V, 0.03A
D1
UF4003
C2
100μF
35V
C3
100μF
35V
L3
DS1
1N 4007
U1
FSQ311
D5
1N4007
AC IN
CS5
6.8nF
680V
RS5
150kΩ
R2
100kΩ
L1
12
1
F1
FUSE
D6
1N4007
T1
EE1927
RT1
5D-9
FB1
Ferritebead
C104* C14
100nF 22μF
SMD 50V
GND
1 ZR1
1.2kΩ
D8
1N 4004
C5
100μF
35V
L5
7
6
5.1V, 0.9A
D7
SB360
5
ZD1
1N4746A
C12
680μF
10V
C11
680μF
10V
8
L6
9
D10
1N4148
R11
R7
6.2kΩ 6.2kΩ
C18
33pF
50V
C4
100μF
35V
11
R4*
5Ω
R5
12kΩ
12V, 0.03A
D4
UF4003
3.3V, 0.9A
D9
SB360
C16
680μF
10V
C15
680μF
10V
8
R6
510Ω
R10
6.2kΩ
* : optional components
R8
1kΩ
R12
8kΩ
C19
68nF
U3
FOD817A
U2
TL431
R13
6kΩ
Figure 31. Demo Circuit of FSQ311
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
19
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Typical Application Circuit of FSQ311
3mm
EE1927
Np/2
Np/2
12
1
TAPE 4T
N-12V
11
2
NVCC 5
1
NVcc
2
TAPE 2T
6
Shield winding
TAPE 2T
5
(0.1~0.15φ)
`
9
Lp/2(0.2φ)
(0.1~0.15φ)
10 N
12V
3
3mm
N12V & N-12V
12
(0.1~0.15φ)
N3.3V
11
8
8
8
9
9
9
N5V
8
8
8
7
7
7
(0.2φ,3parallel)
Shield winding
7
2
N5V
Lp/2(0.2φ)
1
TAPE 2T
TAPE 1T
TAPE 1T
TAPE 1T
1
(0.1~0.15φ)
6
1
10
N3.3V
(0.2φ,3parallel)
8
11
1
TAPE 1T
TAPE 2T
TAPE 1T
3
Bottom of bobbin
Figure 32. Transformer Schematic Diagram of FSQ311
3. Winding Specification
No
Pin (s→f)
Wire
Np/2
3→2
0.2φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Shield
1 → open
0.1φ × 2
Insulation: Polyester Tape t = 0.025mm, 1 Layer
N5V
7→8
0.2φ × 3
Insulation: Polyester Tape t = 0.025mm, 1 Layer
N3.3V
9→8
0.2φ × 3
Insulation: Polyester Tape t = 0.025mm, 1 Layer
N12V
10 → 11
0.1φ × 1
N-12V
11 → 12
0.1φ × 3
Insulation: Polyester Tape t = 0.025mm, 1 Layer
Shield
1 → open
0.1φ × 2
Insulation: Polyester Tape t = 0.025mm, 2 Layers
NVCCV
5→6
0.1φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Np/2
2→1
0.2φ × 1
Insulation: Polyester Tape t = 0.025mm, 4 Layers
Turns
Winding Method
111
Solenoid Winding, 2 Layers
Shield winding
15
Center Solenoid Winding
10
Center Solenoid Winding
30
33
Solenoid Winding
Solenoid Winding
Shield winding
36
Center Solenoid Winding
111
Solenoid Winding, 2 Layers
4. Electrical Characteristics
Pin
Specification
Remarks
Inductance
1-3
2.1mH ± 10%
66kHz, 1V
Leakage
1-3
100µH Max.
Short all other pins
5. Core & Bobbin
„ Core: EE1927 (Ae=23.4mm2)
„ Bobbin: EE1927
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
20
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
2. Transformer
Part
Value
Note
Part
Value
Resistor
Note
Inductor
R2
100kΩ
1/4W
L2
660µH
ZR1
1.2kΩ
1/4W
L1
4.7µH
R4
5Ω
1/2W
L3
4.7µH
R5
12kΩ
1/4W
L5
4.7µH
R7
6.2kΩ
1/4W
L6
4.7µH
R11
6.2kΩ
1/4W
RS5
150kΩ
2W
D2,3,4,5
IN4007
RS6
200Ω
1W
D8
IN4004
R6
510Ω
1/4W
D10
1N4148
Diode
R8
1kΩ
1/4W
ZD1
1N4746A
R12
8kΩ
1/4W
DS1
1N4007
R10
6.2kΩ
1/4W, 1%
D1
UF4003
R13
6kΩ
1/4W, 1%
D4
UF4003
D7
SB360
C6
10µF/400V
Electrolytic
D9
SB360
C7
10µF/400V
Electrolytic
C17
47nF/50V
Ceramic
U1
FSQ311
FPS™
C104
100nF/50V
SMD(1206)
U2
KA431 (TL431)
Voltage reference
C14
22µF/50V
Electrolytic
U3
FOD817A
Opto-coupler
C18
33pF/50V
Ceramic
CS5
6.8nF/680V
Film
C2
100µF/35V
Electrolytic
C3
100µF/35V
Electrolytic
C4
100µF/35V
Electrolytic
C5
100µF/35V
Electrolytic
Capacitor
C11
680µF/10V
Electrolytic
C12
680µF/10V
Electrolytic
C15
680µF/10V
Electrolytic
C16
680µF/10V
Electrolytic
C19
68nµF/50V
Ceramic
C1
4.7nF/375VAC
Ceramic
IC
Fuse
2A/250V
RT1
5D-9
NTC
Transformer
T1
EE1927
Bridge Diode
Ferrite bead
FB1
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
Fuse
www.fairchildsemi.com
21
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
6. Demo Board Part List
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Package Dimensions
9.83
9.00
6.67
6.096
8.255
7.61
3.683
3.20
5.08 MAX
7.62
0.33 MIN
3.60
3.00
(0.56)
2.54
0.56
0.355
0.356
0.20
9.957
7.87
1.65
1.27
7.62
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO
JEDEC MS-001 VARIATION BA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
D) DIMENSIONS AND TOLERANCES PER
ASME Y14.5M-1994
E) DRAWING FILENAME AND REVSION: MKT-N08FREV2.
Figure 33. 8-Lead, Dual In-Line Package(DIP)
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
22
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
Package Dimensions (Continued)
MKT-MLSOP08ArevA
Figure 34. 8-Lead, LSOP Package
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
23
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 — Green Mode Fairchild Power Switch (FPS™)
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
24
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