UMS CHA5296-99F/00 27-30ghz high power amplifier Datasheet

CHA5296
27-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5296 is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process on 50µm substrate thickness, 0.25µm
gate length, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
Gain & RLosses (dB)
20
Main Features
■ Performances : 27-30GHz
■ 29dBm output power @ 1dB comp. gain
■ 15 dB ± 1dB gain
■ DC power consumption, 850mA @ 6V
■ Chip size : 3.80 x 2.52 x 0.05 mm
15
10
5
S22
0
-5
-10
-15
S11
-20
20
22
24
26
28
30
32
34
Frequency (GHz)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Typ
Fop
Operating frequency range
27
G
Small signal gain
14
15
dB
P1dB
Output power at 1dB gain compression
28
29
dBm
Id
Bias current
850
Max
Unit
30
GHz
1000
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52962147 - 27-May-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
36
27-30GHz High Power Amplifier
CHA5296
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id #900mA
Symbol
Fop
G
∆G
Is
P1dB
Parameter
Min
Operating frequency range (1)
27
Small signal gain (1)
14
Typ
Max
Unit
30
GHz
15
dB
Small signal gain flatness (1)
±1
dB
Reverse isolation
50
dB
Pulsed output power at 1dB compression (1)
28
29
dBm
P03
Output power at 3dB gain compression (1)
29
30
dBm
IP3
3 order intercept point (2)
41
dBm
PAE
Power added efficiency at Psat
16
%
rd
VSWRin
12
Input VSWR (2)
5:1
VSWRout Output VSWR (2)
2.5:1
Tj
Junction temperature for 80°C backside
170
Id
Bias current @ small signal
850
°C
1000
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6.25
V
Id
Drain bias current
1450
mA
Vg
Gate bias voltage
-2.5 to +0.4
V
Vgd
Negative gate drain voltage ( = Vg - Vd)
-8
V
Pin
Maximum peak input power overdrive (2)
+18
dBm
Ta
Operating temperature range
-40 to +80
°C
Storage temperature range
-55 to +125
°C
Tstg
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52962147 - 27-May-02
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
27-30GHz High Power Amplifier
CHA5296
Typical on Jig Measurements
Bias conditions: Vd=6V, Vg tuned for Id = 850mA
20
15
Gain & RLosses (dB)
10
5
0
S22
-5
-10
S11
-15
-20
14
16
18
20
22
24
26
28
30
32
34
36
Frequency (GHz)
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1200
32GHz
28GHz
30GHz
30GHz
Id
1100
26GHz
1000
28GHz
900
800
26GHz
30GHz
Gain
700
28GHz
32GHz
600
30GHz
500
400
300
DC Total Drain Current Id (mA)
Gain (dB) & PAE (%)
Linear Gain & Return Losses versus frequency
200
32GHz
PAE
100
0
21
22
23
24
25
26
27
28
29
30
31
32
33
Output power (dBm)
Gain, PAE & DC drain current vs Output power @ different frequencies
Ref. : DSCHA52962147 - 27-May-02
3/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
27-30GHz High Power Amplifier
CHA5296
42
38
34
30
26
22
Output power (dBm)
IP3=+41dBm
Σ(F1;F2)
18
14
10
6
Σ((4F1-3F2);(4F2-3F1))
2
-2
-6
Σ((3F1-2F2);(3F2-2F1))
-10
-14
-18
F=28,5GHz
∆F=10MHz
-22
Σ((2F1-F2);(2F2-F1))
-26
-30
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
Input Power(dBm)
IP3 versus total input power @ 28.5GHz
60
55
50
C/I (dBc) & IP3 (dBm)
45
40
35
30
25
20
15
c/i3
10
c/i
IP3
5
0
10
12
14
16
18
20
22
24
26
28
30
Total Fundamental Output power (dBm)
C/I & IP3 versus total fund. output power @ 28.5GHz (∆F=10MHz)
Ref. : DSCHA52962147 - 27-May-02
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
27-30GHz High Power Amplifier
CHA5296
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 50µm. All dimensions are in micrometers )
Ref. : DSCHA52962147 - 27-May-02
5/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
27-30GHz High Power Amplifier
CHA5296
Application note
Bias operation sequence:
ON: Supply Gate voltage
Supply Drain voltage
OFF: Cut off Drain voltage
Cut off Gate voltage
Due to 50µm thickness, specific care is requested for the handling and assembly.
Ordering Information
Chip form
:
CHA5296-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA52962147 - 27-May-02
6/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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