Microsemi APT17M120JCU3 Isotopâ® buck chopper mosfet sic chopper diode power module Datasheet

APT17M120JCU3
ISOTOP® Buck chopper
MOSFET + SiC chopper diode
Power module
VDSS = 1200V
RDSon = 680mΩ typ @ Tj = 25°C
ID = 17A @ Tc = 25°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
D
Features
•
G
S
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
A
G
•
•
•
A
S
Power MOS 8™ MOSFET
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
D
ISOTOP®
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Tc = 25°C
Max ratings
1200
17
13
90
±30
816
480
12
Unit
V
September, 2009
ID
Parameter
Drain - Source Breakdown Voltage
A
V
mΩ
W
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APT17M120JCU3 – Rev 0
Symbol
VDSS
APT17M120JCU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Tj = 25°C
VDS =1200V
VGS = 0V
Tj = 125°C
VGS = 10V, ID = 12A
VGS = VDS, ID = 2.5mA
VGS = ±30 V
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
3
Typ
680
4
Max
100
500
816
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 12A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Tf
Min
Turn-off Delay Time
Fall Time
pF
260
nC
42
120
45
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 12A
RG = 2.2Ω
Rise Time
Typ
6696
615
80
27
ns
145
42
SiC chopper diode ratings and characteristics
IRM
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
32
56
10
1.6
2.3
200
1000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
80
C
Total Capacitance
f = 1MHz, VR = 200V
96
f = 1MHz, VR = 400V
69
Unit
V
µA
A
1.8
3
V
nC
pF
Symbol Characteristic
RthJC
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Min
Junction to Case Thermal Resistance
Typ
Mosfet
SiC Diode
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
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2500
-40
Max
0.26
1.65
20
September, 2009
Thermal and package characteristics
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
2-5
APT17M120JCU3 – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APT17M120JCU3
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0.05
0
0.00001
Single P ulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
September, 2009
0.25
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3-5
APT17M120JCU3 – Rev 0
Thermal Impedance (°C/W)
0.3
APT17M120JCU3
Low Voltage Output Characteristics
Low Voltage Output Characteristics
20
35
VGS=10V
TJ=125°C
ID, Drain Current (A)
TJ=25°C
25
20
TJ=125°C
15
10
15
VGS=6, 7,8 & 9V
5V
10
5
4.5V
5
0
0
0
5
10
15
0
20
5
VDS, Drain to Source Voltage (V)
20
25
30
Transfert Characteristics
20
3
ID, Drain Current (A)
VGS=10V
ID=12A
2.5
2
1.5
1
0.5
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5
duty cycle
15
TJ=125°C
10
TJ=25°C
5
0
25
50
75
100
125
150
0
2
3
4
5
6
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source
Capacitance vs Drain to Source Voltage
10000
12
ID=12A
TJ=25°C
10
1
TJ, Junction Temperature (°C)
Ciss
VDS=240V
C, Capacitance (pF)
VDS=600V
8
6
VDS=960V
4
2
1000
Coss
100
Crss
10
0
0
40
80
120
160
200
240
280
0
50
100
150
200
VDS, Drain to Source Voltage (V)
September, 2009
RDSon, Drain to Source ON resistance
15
VDS, Drain to Source Voltage (V)
Normalized RDS(on) vs. Temperature
VGS, Gate to Source Voltage
10
Gate Charge (nC)
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4-5
APT17M120JCU3 – Rev 0
ID, Drain Current (A)
30
APT17M120JCU3
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.8
0.9
1.6
1.4
0.7
1.2
1
0.5
0.8
0.3
0.6
0.4
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
100
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
16
TJ=75°C
12
TJ=125°C
8
4
TJ=175°C
75
50
TJ=75°C
TJ=125°C
25
TJ=175°C
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
0
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
VF Forward Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
700
600
500
400
300
200
100
0
1000
September, 2009
10
100
VR Reverse Voltage
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APT17M120JCU3 – Rev 0
1
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