SAVANTIC BDX88C Silicon pnp power transistor Datasheet

SavantIC Semiconductor
Product Specification
BDX88C
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type BDX87C
·DARLINGTON
APPLICATIONS
·Designed for use in power linear and
switching application.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-12
A
ICM
Collector current(peak)
-18
A
IB
Base current
-0.2
A
PT
Total power dissipation
120
W
Tj
Max. operating Junction temperature
Tstg
TC=25
Storage temperature
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
UNIT
1.45
/W
SavantIC Semiconductor
Product Specification
BDX88C
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.1A ; IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=-6A ;IB=-24mA
-2.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=-12A ;IB=-120mA
-3.0
V
Base-emitter saturation voltage
IC=-12A ;IB=-120mA
-4.0
V
VBE
Base-emitter on voltage
IC=-6A ; VCE=-3V
-2.8
V
hFE-1
DC current gain
IC=-5A ; VCE=-3V
1000
hFE-2
DC current gain
IC=-6A ; VCE=-3V
750
hFE-3
DC current gain
IC=-12A ; VCE=-3V
100
ICBO
Collector cut-off current
VCB=-100V; IE=0
TC=150
-0.5
-5.0
mA
ICEO
Collector cut-off current
VCE=-50V; IB=0
-1.0
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1.0
mA
VF-1
Diode forward voltage
IF=-3A
-1.8
V
VF-2
Diode forward voltage
IF=-8A
VBEsat
CONDITIONS
MIN
TYP.
-100
UNIT
V
18000
-2.5
2
MAX
V
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BDX88C
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