Intersil IRF9630 6.5a, 200v, 0.800 ohm, p-channel power mosfet Datasheet

IRF9630, RF1S9630SM
Data Sheet
6.5A, 200V, 0.800 Ohm, P-Channel Power
MOSFETs
These are P-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for other
high-power switching devices. The high input impedance
allows these types to be operated directly from integrated
circuits.
Formerly developmental type TA17512.
Ordering Information
PART NUMBER
PACKAGE
July 1999
File Number
2224.3
Features
• 6.5A, 200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
BRAND
IRF9630
TO-220AB
IRF9630
RF1S9630SM
TO-263AB
RF1S9630
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9630SM9A.
S
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN (FLANGE)
4-27
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF9630, RF1S9630SM
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF9630,
RF1S9630SM
-200
-200
-6.5
-4
-26
±20
75
0.6
500
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-200
-
-
V
Drain to Source Breakdown Voltage
BVDSS
ID = -250µA, VGS = 0V(Figure 10)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = -250µA
-2
-
-4
V
VDS = Rated BVDSS, VGS = 0V
-
-
-25
µA
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC= 125oC
On-State Drain Current (Note 2)
ID(ON)
Gate to Source Leakage Current
IGSS
On Resistance (Note 2)
rDS(ON)
Forward Transconductance (Note 2)
Turn-On Delay Time
gfs
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
VDS > ID(ON) x rDS(ON)MAX, VGS = -10V
VGS = ±20V
ID = -3.5A, VGS = -10V (Figures 8, 9)
VDS ≥ ID(ON) x rDS(ON)MAX, ID = -3.5A
(Figure 12)
VDD = -100V, ID ≈ -6.5A, RG = 50Ω
RL = 15.4Ω (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
tf
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Qg(TOT)
Qgs
Gate to Drain (“Miller”) Charge
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Internal Drain Inductance
LD
VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS
Ig(REF) = -1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)
Measured From the
Contact Screw On Tab To
the Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to the Center of
Die
Internal Source Inductance
LS
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
4-28
Measured From the Source
Lead, 6mm (0.25in) From
Package to Source Bonding Pad
Typical Socket Mount
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
-
-
-250
-6.5
-
-
A
-
-
±100
nA
-
0.500
0.800
Ω
2.2
3.5
-
S
-
30
50
ns
-
50
100
ns
-
50
100
ns
-
40
80
ns
-
31
45
nC
-
18
-
nC
-
13
-
nC
-
550
-
pF
-
170
-
pF
-
50
-
pF
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
1.67
oC/W
-
-
80
oC/W
LD
G
LS
S
IRF9630, RF1S9630SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
ISD
Pulse Source to Drain Current
(Note 3)
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral Reverse P-N Junction Diode
ISDM
MIN
TYP
MAX
UNITS
-
-
-6.5
A
-
-
-26
A
-
-
-1.5
V
-
400
-
ns
-
2.6
-
µC
D
G
S
Source to Drain Diode Voltage (Note 2)
TJ = 25oC, ISD = -6.5A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A. (Figures 15, 16).
Typical Performance Curves
Unless Otherwise Specified
-10
ID, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
-8
-6
-4
-2
0
0
50
100
150
0
50
TC, CASE TEMPERATURE (oC)
75
125
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
THERMAL IMPEDENCE
1
ZqJC, NORMALIZED
POWER DISSIPATION MULTIPLIER
1.2
0.5
0.2
0.1
0.1
PDM
0.05
0.02
0.01
t1
t2 t2
SINGLE PULSE
0.01
10-5
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-4
10-3
10-2
10-1
t 1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-29
1
10
IRF9630, RF1S9630SM
Typical Performance Curves
-100
Unless Otherwise Specified (Continued)
-15
ID, DRAIN CURRENT (A)
TJ = MAX RATED
SINGLE PULSE
-10
10µs
100µs
1ms
-1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
-0.1
-1
100ms
DC
-10
-100
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TC = 25oC
VGS = -10V
VGS = -8V
-12
-9
VGS = -6V
-6
VGS = -5V
-3
VGS = -4V
0
-1000
-10
VGS = -9V
VGS = -8V
VGS = -7V
VGS = -6V
-4
VGS = -5V
VGS = -4V
0
-2
-4
-6
-8
ID(ON), ON-STATE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = -10V
-8
0
-55oC
-9
25oC
-125oC
-6
-3
0
-10
0
-2
-4
-6
-8
VGS, GATE TO SOURCE VOLTAGE (V)
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
rDS(ON), DRAIN TO SOURCE ON
RESISTANCE (Ω)
2.5
1.6
1.2
VGS = -10V
0.8
VGS = - 20V
0
-15
-10
ID, DRAIN CURRENT (A)
-20
-25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
0
-40
0
40
80
120
TJ , JUNCTION TEMPERATURE (oC)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-30
-10
FIGURE 7. TRANSFER CHARACTERISTICS
2.0
-5
-50
-12
FIGURE 6. SATURATION CHARACTERISTICS
0
-40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.4
-30
FIGURE 5. OUTPUT CHARACTERISTICS
-15
-12
-20
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
-16
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -7V
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-20
-9V
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
160
IRF9630, RF1S9630SM
Typical Performance Curves
Unless Otherwise Specified (Continued)
2000
1.15
VGS = 0V, f = 1MHz
CISS = CGS + CGD
C
= CGD
1600 RSS
COSS ≈ CDS + CGD
C, CAPACITANCE (pF)
NORMALIZED DRAIN-TO-SOURCE
BREAKDOWN VOLTAGE
1.25
1.05
0.95
1200
CISS
800
COSS
400
0.85
CRSS
0.75
-40
0
40
120
80
0
160
10
0
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
30
40
50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
5.6
ISD, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
7.0
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = -55oC
TJ = 25oC
4.2
TJ = 125oC
2.8
1.4
TJ = 150oC
-10
TJ = 25oC
-1.0
-0.1
0
0
-3
-6
-9
-12
-15
-0.4
-0.6
ID , DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
VGS, GATE TO SOURCE (V)
-0.8
-1.4
-1.0
-1.2
-1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
I D = -8A
-5
VDS = -160V
- 10
VDS = -100V
VDS = -40V
- 15
0
8
16
24
42
40
Qg(TOT) , TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-31
-1.8
IRF9630, RF1S9630SM
Test Circuits and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
REQUIRED PEAK IAS
-
RG
VDD
+
0V
VDD
DUT
tP
IAS
IAS
VDS
tP
0.01Ω
-VGS
BVDSS
FIGURE 15. UNCLAMPED INDUCTIVE ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
0
-
DUT
VGS
VDS
VDD
VGS
0
+
10%
10%
RL
RG
tf
90%
90%
10%
50%
50%
PULSE WIDTH
90%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT
-VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
0
VDS
DUT
0.2µF
50kΩ
0.3µF
+
Qgs
Qg(TOT)
DUT
G
VGS
Qgd
D
VDD
0
S
IG(REF)
IG CURRENT
SAMPLING
RESISTOR
+VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-32
0
IG(REF)
FIGURE 20. GATE CHARGE WAVEFORMS
IRF9630, RF1S9630SM
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