Mitsubishi FL12KM-7A High-speed switching use nch power mosfet Datasheet

MITSUBISHI POWER MOSFET
ARY
FL12KM-7A
MIN
RELI
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
FL12KM-7A
OUTLINE DRAWING
Dimensions in mm
3 ± 0.3
6.5 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
➁
2.6 ± 0.2
➀➁➂
¡10V DRIVE
¡VDSS ................................................................................ 350V
¡rDS (ON) (MAX) ................................................................ 0.4Ω
¡ID ............................................................................................ 7A
¡Viso ................................................................................ 2000V
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
➀ GATE
➁ DRAIN
➂ SOURCE
➀
➂
TO-220FN
APPLICATION
Inverter type fluorescent light sets, SMPS
MAXIMUM RATINGS (Tc = 25°C)
Symbol
Parameter
Ratings
Unit
350
±30
V
V
12
36
A
A
12
35
A
W
Channel temperature
–55 ~ +150
°C
Storage temperature
Isolation voltage
AC for 1minute, Terminal to case
–55 ~ +150
2000
°C
V
Weight
Typical value
2.0
g
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
Drain current
Drain current (Pulsed)
IDA
PD
Avalanche current (Pulsed)
Maximum power dissipation
Tch
Tstg
Viso
—
Conditions
VGS = 0V
VDS = 0V
L = 200µH
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FL12KM-7A
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
V (BR) DSS
V (BR) GSS
Drain-source breakdown voltage
Gate-source breakdown voltage
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
VGS (th)
Gate-source threshold voltage
rDS (ON)
VDS (ON)
Drain-source on-state resistance ID = 6A, VGS = 10V
Drain-source on-state voltage ID = 6A, VGS = 10V
y fs
Ciss
Forward transfer admittance
Input capacitance
Coss
Crss
Output capacitance
Reverse transfer capacitance
td (on)
tr
Turn-on delay time
Rise time
td (off)
Turn-off delay time
tf
VSD
Fall time
Source-drain voltage
Rth (ch-c)
Thermal resistance
Limits
Test conditions
Unit
Min.
Typ.
Max.
350
±30
—
—
—
—
V
V
VGS = ±25V, VDS = 0V
VDS = 350V, VGS = 0V
—
—
—
—
±10
1.0
µA
mA
ID = 1mA, VDS = 10V
2.0
3.0
4.0
V
—
—
0.32
1.90
0.40
2.40
Ω
V
ID = 6A, VDS = 10V
—
—
10
1050
—
—
S
pF
VDS = 25V, VGS = 0V, f = 1MHz
—
—
150
25
—
—
pF
pF
—
—
20
30
—
—
ns
ns
—
160
—
ns
IS = 6A, VGS = 0V
—
—
60
1.5
—
2.0
ns
V
Channel to case
—
—
3.57
°C/W
VDD = 150V, ID = 6A, VGS = 10V, R GEN = RGS = 50Ω
PERFORMANCE CURVES
MAXIMUM SAFE OPERATING AREA
40
7
5
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
50
30
20
10
3
2
tw = 10µs
101
100µs
7
5
3
2
1ms
100
10ms
7
5
TC = 25°C
Single Pulse
3
2
100ms
101
0
50
150
7
200
DC
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =20V,10V,8V,6V
20
DRAIN CURRENT ID (A)
100
Tc = 25°C
Pulse Test
16
VGS = 20V,10V,8V,6V
10
12
5V
8
4
Tc = 25°C
Pulse Test
DRAIN CURRENT ID (A)
0
8
5V
6
4
PD = 35W
2
PD = 35W
4V
4V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FL12KM-7A
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
Tc = 25°C
Pulse Test
16
ID =
24A
12
8
12A
4
6A
0
0
4
8
12
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
20
Tc = 25°C
Pulse Test
0.8
VGS = 20V
0.6
10V
0.4
0.2
0
10-1 2 3 5 7100 2 3 5 7101 2 3 5 7102
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
20
16
12
Tc = 25°C
VDS = 10V
Pulse Test
8
4
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
7
5
3
2
101
7
5
2
0
0
4
8
12
16
100 0
10
20
2
3 4 5 7 101
2
3 4 5 7 102
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
5
103
3
Ciss
7
5
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
TC = 25°C 75°C 125°C
GATE-SOURCE VOLTAGE VGS (V)
3
2
3
2
102
7
5
3
2
Crss
Coss
Tch = 25°C
f = 1MHZ
VGS = 0V
101
7
5
3
VDS =10V
Pulse Test
3
100
2 3
5 7101 2 3
2
td(off)
102
tf
7
5
tr
3
td(on)
2
Tch = 25°C
VGS = 10V
VDD = 150V
RGEN = RGS = 50Ω
101
5 7 102 2 3 5
7103
DRAIN-SOURCE VOLTAGE VDS (V)
7
5
100
2
3 4 5 7 101
2
3 4 5 7 102
DRAIN CURRENT ID (A)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FL12KM-7A
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch POWER MOSFET
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
50V
16
100V
200V
12
Tch = 25°C
ID =12A
8
4
0
0
20
40
60
80
16
TC =
125°C
12
75°C
4
0
100
1.6
2.4
3.2
4.0
5.0
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
7
5
3
2
100
7
5
VGS = 10V
ID = 6A
Pulse Test
3
2
–50
0
50
100
4.0
VDS = 10V
ID = 1mA
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
VGS = 0V
ID = 1mA
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (°C/W)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
0.8
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
0.4
0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10–1
25°C
8
GATE CHARGE Qg (nC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
VGS = 0V
Pulse Test
VDS =
SOURCE CURRENT IS (A)
GATE-SOURCE VOLTAGE VGS (V)
20
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
D = 1.0
3
2
0.5
100
0.2
7
5
0.1
3
2
10–1
7
5
3
2
0.05
0.02
PDM
0.01
tw
Single Pulse
T
D= tw
T
10–2 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
PULSE WIDTH tw (s)
Aug. 1999
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