WILLAS MMBT3906DW1T1 Dual bias resistor transistor Datasheet

WILLAS
FM120-M+
MMBT3906DW1T1
THRU
Dual
Bias
Resistor
Transistor
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
High
capability, lowdevice
forward is
voltage
drop. of our popular
•The
Mcurrent
MBT3906DW1T1
a spin–off
High
surge
capability.
•
SOT–23/SOT–323 three–leaded device. It is designed for general
for overvoltage
protection.
• Guardring
purpose
amplifier
applications
and is housed in the SOT–363
Ultra high-speed switching.
•
six–leaded surface mount package. By putting two discrete devices in
• Silicon epitaxial planar chip, metal silicon junction.
one package, this device is ideal for low–power surface mount
• Lead-free parts meet environmental standards of
applications
where board
MIL-STD-19500
/228 space is at a premium.
• RoHS product for packing code suffix "G"
• hHalogen
FE, 100–300
free product for packing code suffix "H"
• Mechanical
Low VCE(sat), ≤ 0.4
V
data
Circuit Design
• •Simplifies
Epoxy : UL94-V0 rated flame retardant
• •Reduces
Board
Space
Case : Molded plastic, SOD-123H
,
Component Count
• •Reduces
Terminals :Plated terminals, solderable per MIL-STD-750
• Available inMethod
8 mm, 2026
7–inch/3,000 Unit Tape and Reel
• •Device
MMBT3906DW1T1
= A2
PolarityMarking:
: Indicated
by cathode band
:0.005g
• •Weight
Mounting Position : Any
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
1
2
5
0.071(1.8)
40.056(1.4)
3
SOT-363
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
(3)
(2)
(1)
Dimensions in inches and (millimeters)
Q1
Featrues
• Weight : Approximated 0.011 gram
z RoHS product for packing code suffix "G",
Q2
HalogenMAXIMUM
free productRATINGS
for packing AND
code suffix
"H".
ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS
RATINGS
Marking Code
Rating
Collector–Emitter
Maximum
Recurrent PeakVoltage
Reverse Voltage
(4)
Collector–Base
Maximum
RMS VoltageVoltage
Maximum
DC Blocking
Voltage
Emitter–Base
Voltage
VEBO VDC
Maximum
Average
Forward
Rectified Current
Collector
Current
– Continuous
IO
IC
Electrostatic
ESD
Peak Forward
Surge Discharge
Current 8.3 ms single half sine-wave
Value
12
–40
20
Unit
13
30Vdc
14
40
15
50
–40
14
21Vdc
28
35
20
–5.0
30Vdc
40
–200
mAdc
superimposed on rated load (JEDEC method)
HBM>16000,
IFSM
MM>2000
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage
Temperature
Range
THERMAL
CHARACTERISTICS
CHARACTERISTICS
(1)
Total
Package
Dissipation
Maximum
Forward
Voltage
at 1.0A DC
TA = 25°C
16
60
18
80
10
100
115
150
120
200
V
105
Shipping
150
140
V
200
3000 Units/Reel
V
ORDERING INFORMATION
42
Device
60
50
MMBT3906DW1T1
1.0
V
-55 to +125
56
70
Marking100
80
A2
A
30
A
40
120
℃
-55 to +150
- 65 to +175
TSTG
Symbol
Max
Unit
PD
150
mW
0.50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Average Reverse Current at @T A=25℃
Resistance
RJA
Rated Thermal
DC Blocking
Voltage Junction to @T A=125℃
Ambient
NOTES:
(6)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Symbol
VCEO VRRM
VCBO VRMS
Characteristic
(5)
Junction and Storage
TJ, Tstg
1- Measured
at 1 MHZ and
applied reverse voltage of 4.0 VDC.
Temperature
Range
IR
833
°C/W
–55 to +150
°C
0.70
0.85
0.9
0.92
0.5
10
V
m
2- Thermal Resistance From Junction to Ambient
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3906DW1T1
THRU
Dual
Bias
Resistor
Transistor
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
ELECTRICAL
CHARACTERISTICS (TA = 25°C unless otherwise noted)
• Batch process design, excellent power dissipation offers
Symbol
better reverse leakage current
and thermal resistance.
Characteristic
Min
Max
SOD-123H
• Low profile surface mounted application in order to
Unit
OFF CHARACTERISTICS
optimize board space.
(2)
loss, highVoltage
efficiency.
• Low power
Collector–Emitter
Breakdown
• High current capability, low forward voltage drop.
Collector–Base Breakdown Voltage
• High surge capability.
Emitter–Base
Breakdown
Voltage protection.
for overvoltage
• Guardring
high-speed switching.
• UltraCurrent
Base Cutoff
• Silicon epitaxial planar chip, metal silicon junction.
Collector Cutoff Current
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
ON CHARACTERISTICS
(2)
• RoHS product for packing code suffix "G"
DC Current Gain
Halogen free product for packing code suffix "H"
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
Mechanical
(IC = –1.0 mAdc, VCE = data
–1.0 Vdc)
(IC =
–10 mAdc,
VCE = –1.0
: UL94-V0
ratedVdc)
flame retardant
• Epoxy
(IC = –50 mAdc, VCE = –1.0 Vdc)
: Molded
• Case
(IC =
–100 mAdc,
VCEplastic,
= –1.0 SOD-123H
Vdc)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Emitter Saturation Voltage
2026
(IC = –10 mAdc, IMethod
B = –1.0 mAdc)
(IC =
–50
mAdc,
I
=
–5.0
mAdc)
• Polarity : Indicated
by
cathode band
B
V(BR)CEO
0.146(3.7)
–40
V(BR)CBO
–40
V(BR)EBO
–5.0
–
IBL
–
–50
ICEX
–
–50
60
80
100
60
30
–
–
300
–
–
0.130(3.3)
hFE
0.031(0.8) Typ.
–
Vdc
0.012(0.3) Typ.
–
Vdc
Vdc
0.071(1.8)
0.056(1.4)
nAdc
nAdc
–
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
VCE(sat)
–
–0.25
–
–0.4
Dimensions in inches
and (millimeters)
Base–Emitter
Saturation
Voltage
Position
: Any
• Mounting
(IC = –10 mAdc, IB = –1.0 mAdc)
• Weight : Approximated 0.011 gram
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat)
Vdc
Vdc
–0.65
–
–0.85
–0.95
fT
250
–
MHz
Cobo
–
4.5
pF
Cibo
–
10.0
pF
SMALL–SIGNAL
CHARACTERISTICS
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25℃– ambient
temperature
Current–Gain
Bandwidth
Product unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
Output Capacitance
For capacitive load, derate current by 20%
Input Capacitance
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤2.0%.
Marking Code
12
13
14
20
30
40
VRRM
otherwise
noted)
ELECTRICAL CHARACTERISTICS (TA = 25°CVunless
14
21 (Continued)
28
Maximum RMS Voltage
RMS
Characteristic
Maximum DC Blocking Voltage
20
30
40
VDC
Maximum Recurrent Peak Reverse Voltage
Voltage Feedback Ratio
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
Typical Thermal Resistance (Note 2)
Small–Signal Current Gain
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
OutputTemperature
Admittance Range
Storage
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
Noise Figure
CHARACTERISTICS
115
150
120
200
35
42
Symbol
50
60
56
Min 80
70
Max
100
105
Unit
150
140
12
kΩ
IFSM
hre
300.1
10
X 10–4
hfe
40
100
120
400
–
RΘJA
CJ
TJ
-55 to +125
hoe - 65 to 3.0
+175
TSTG
@T A=125℃
0.50
0.70
IR
td
(IC = –10 mAdc, IB1 = –1.0 mAdc)
Storage Time
Fall Time
10
35
tr
–
35
(VCC = –3.0 Vdc, IC = –10 mAdc)
ts
–
225
(IB1 = IB2 = –1.0 mAdc)
tf
–
75
2- Thermal Resistance From Junction to Ambient
2012-06
0.85
–
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2012-0
-55 to +150
60
mhos
0.9
0.92
0.5
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
NOTES:
Rise Time
200
NF FM160-MH –FM180-MH FM1100-MH
4.0
dB
FM1150-MH
FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
Maximum
Average
Reverse Current at @T A=25℃
SWITCHING
CHARACTERISTICS
Delay Time
10
100
1.02.0
(VCE Forward
= –5.0 Vdc,
IC =at–100
Maximum
Voltage
1.0A Adc,
DC RS = 1.0 k Ω, f =VF1.0 kHz)
Rated DC Blocking Voltage
18
80
hie
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
superimposed on rated load (JEDEC method)
16
60
IO
Input Impedance
Maximum
Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
15
50
ns
ns
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3906DW1T1
THRU
Dual
Bias
Resistor
Transistor
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Package outline
3V
Features
+0.5 V
3V
< 1 ns
+9.1 V
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal
275resistance.
SOD-123H
optimize board space.10 k
10 k
< 1 ns surface mounted application in order to
• Low profile
0
• Low power loss, high efficiency.
• High current capability, low forward voltageCsdrop.
< 4 pF*
10.6 V• High surge capability.
ns
10 < t1 < 500 s
protection.
• Guardring for300overvoltage
10.9 V
t1
DUTY CYCLE = 2%
• Ultra high-speed switching.
DUTY CYCLE = 2%
• Silicon epitaxial planar chip, metal silicon junction.
* Total
shunt capacitance
of test jig and connectors
standards
of
• Lead-free parts meet environmental
MIL-STD-19500 /228
Figurefor1.packing
Delay code
and suffix
Rise "G"
Time
• RoHS product
275
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Cs < 4 pF*
1N916
0.071(1.8)
0.056(1.4)
Figure 2. Storage and Fall Time
Equivalent Test Circuit
Test Circuit
Halogen freeEquivalent
product for packing
code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
TYPICAL TRANSIENT CHARACTERISTICS
,
• Terminals :Plated terminals, solderable per MIL-STD-750
TJ = 25°C
TJ = 125°C
Method 2026
CAPACITANCE (pF)
7.0
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
5.0
5000
MAXIMUMCRATINGS
AND ELECTRICAL CHARACTERISTICS
obo
Ratings at 25℃ ambient temperature unless otherwise specified.
ibo
Single phase half wave, 60Hz, Cresistive
of inductive load.
3.0
For capacitive load, derate current by 20%
RATINGS
2.0
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
1.0
0.1
Figure
3.single
Capacitance
Peak Forward Surge Current
8.3 ms
half sine-wave
superimposed on rated load (JEDEC method)
TSTG
TIME (ns)
QA10
100
115
150
120
200
28
35
42
56
70
105
140
150
200
200
402.0 3.0 505.0 7.0 60
10
20 8030 50 100
70 100
1.0CURRENT (mA)
IC, COLLECTOR
40
120
-55300
to +125
200
VCC = 40 V
-55 toI +150
B1 = IB2
- 65 to +175
IC/IB = 20
100
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF V
tr @ VCC = 3.0
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
IR
15 V
40 V
NOTES:
10
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
7
d @ VOB = 0 V
2- Thermal Resistance From Junction to tAmbient
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
2012-0
18
80
500
t f , FALL TIME (ns)
Storage Temperature Range
100
CHARACTERISTICS
70
Maximum
Forward Voltage at 1.0A DC
50
16
60
30
Operating Temperature Range
300
200
15
50
Figure 4. Charge Data
ICC/IJB = 10
TJ
Typical Junction Capacitance (Note 1)
1.0
QT
14
40
IFSM
RΘJA
Typical
500 Thermal Resistance (Note 2)
2012-06
300
200
13
30
100
2170
3050
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 VDC20 30 4020
Maximum Average Forward
RectifiedBIAS
Current
IO
REVERSE
(VOLTS)
Maximum DC Blocking Voltage
Rated DC Blocking Voltage
1000
700
500
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
30
20
Dimensions in inches and (millimeters)
VCC = 40 V
IC/IB = 10
3000
2000
Q, CHARGE (pC)
10
0.031(0.8) Typ.
2.0 V
200
70
50 0.50
0.70
0.85
0.9
0.92
0.5
30
20
10
IC/IB = 10
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Fall Time
200
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3906DW1T1
THRU
Dual
Bias
Resistor
Transistor
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M
Pb Free Produc
SOD-123+ PACKAGE
Features
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
Package outline
NOISE FIGURE VARIATIONS
dissipation
• Batch process design, excellent
(V power
= –5.0
Vdc, T =offers
25°C, Bandwidth = 1.0 Hz)
A
better reverse leakage currentCE
and thermal resistance.
f = 1.0 kHz
optimize board space.
I = 1.0 mA
C
power loss, high efficiency.
• Low
SOURCE
RESISTANCE
= 200 voltage drop.
capability,
low forward
• High current
= 0.5 mA
• High surgeICcapability.
• Guardring for overvoltage protection.
SOURCE RESISTANCE = 2.0 k
• Ultra high-speed switching.
IC = 50 A
metal silicon junction.
• Silicon epitaxial planar chip,
• Lead-free parts meet environmental standards of
4.0
3.0
2.0
MIL-STD-19500 /228
RoHS product
for packing
•SOURCE
RESISTANCE
= 2.0 k code suffix "G"
ICHalogen
= 100 A free product for packing code suffix "H"
1.0
40
IC = 1.0 mA
10
0.012(0.3) Typ.
6
0.071(1.8)
0.056(1.4)
4
IC = 50 A
2
IC = 100 A
0
100
• Terminals :Plated Figure
terminals,
7. solderable per MIL-STD-750
0.146(3.7)
0.130(3.3)
IC = 0.5 mA
8
Mechanical data
0
: UL94-V0
0.2
0.4
1.0 rated
2.0 flame
4.0 retardant
10
20
0.1 • Epoxy
FREQUENCY
(kHz)
SOD-123H
• Case : Molded f,plastic,
SOD-123H
12
profile
surface =mounted
application in order to
• Low
SOURCE
RESISTANCE
200 NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
5.0
0.1
0.2
0.040(1.0)
0.024(0.6)
40
0.4
20
1.0 2.0
4.0
10
Rg, SOURCE RESISTANCE (k OHMS)
0.031(0.8) Typ.
,
100
0.031(0.8) Typ.
Figure 8.
Method 2026
• Polarity : Indicated by cathode band
h PARAMETERS
• Mounting Position : Any
(VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C)
• Weight : Approximated 0.011 gram
300
Dimensions in inches and (millimeters)
hoe, OUTPUT ADMITTANCE ( mhos)
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
70
RATINGS
100 Code
Marking
Maximum
Recurrent Peak Reverse Voltage
70
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
50
IO
Maximum Average Forward Rectified Current
30
0.1
0.2 Current
0.3
0.5 ms
1.0 half sine-wave
2.0 3.0
0.7single
Peak Forward
Surge
8.3
5.0 7.0 10
IFSM
Typical Thermal Resistance
(Note
Figure
9.2)Current
RΘJA
IC, COLLECTOR
CURRENT (mA)
superimposed on rated load
(JEDEC method)
Gain
Typical Junction Capacitance (Note 1)
20
Operating
Temperature Range
h ie , INPUT IMPEDANCE (k OHMS)
Storage Temperature Range
10
7.0
5.0
CHARACTERISTICS
CJ
TJ
TSTG
VF
3.0
Maximum
Average Reverse Current at @T A=25℃
2.0
@T A=125℃
Rated DC Blocking Voltage
IR
NOTES:
1.0
0.7
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.5
2- Thermal
Resistance From Junction to Ambient
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
2012-06
2012-0
30
20
13
30
14
40
21
10
30
7
28
40
5
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
30
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
40 Admittance
Figure 10. Output
120
-55 10
to +125
-55 to +150
- 65 to +175
7.0
5.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Forward Voltage at 1.0A DC
0.3
0.2
50
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
h fe , DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
200 phase half wave, 60Hz, resistive of inductive load.
Single
For capacitive load, derate current by 20%
5.0 7.0 10
3.0
0.50
0.70
0.9
0.85
0.92
0.5
10
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 12. Voltage Feedback Ratio
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3906DW1T1
THRU
Dual
Bias
Resistor
Transistor
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
TYPICAL
STATIC
CHARACTERISTICS
dissipation
offers
• Batch process design, excellent power
better reverse leakage current and thermal resistance.
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
SOD-123H
• Low profile surface mounted application in order to
TJ = +125°C
optimize board space.
0.3
• Low power loss, high efficiency.
+25°C
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
-55°C
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.2
• RoHS product for packing code suffix "G"
1.0
0.7
0.5
VCE = 1.0 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
Halogen free product for packing code suffix "H"
Mechanical data
0.1
flame
• Epoxy : UL94-V0
0.1
0.2
0.3 rated0.5
0.7retardant
1.0
• Case : Molded plastic, SOD-123H
•
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA) 0.031(0.8) Typ.
,
Terminals :Plated terminals, solderable per
MIL-STD-750
Figure
13. DC Current Gain
30
70
50
0.040(1.0)
0.024(0.6)
100
200
0.031(0.8) Typ.
Method 2026
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
• Polarity : Indicated by cathode band
1.0
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.8
IC = 1.0 mA
Dimensions in inches and (millimeters)
TJ = 25°C
10 mA
30 mA
100 mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.6 at 25℃ ambient temperature unless otherwise specified.
Ratings
Single phase half wave, 60Hz, resistive of inductive load.
For 0.4
capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
Maximum RMS Voltage
VRMS
14
21
28
0.2
0.05
0.07
0.1 VDC
IO
Maximum Average Forward Rectified Current
Figure
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
1.0
Operating Temperature
Range
T = 25°C
J
Storage Temperature Range
V, VOLTAGE (VOLTS)
CHARACTERISTICS
0.4
IR
0.2
2- Thermal Resistance From Junction to Ambient
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
2012-06
2012-0
115
150
120
200
70
105
140
150
10
200
100 7.0
5.0
-55 to +150
VC FOR VCE(sat)
- 65 to +175
+25°C TO +125°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
IC/IBVDC.
= 10
CE(sat) @
1- Measured at 1 MHZ and applied reverseVvoltage
of 4.0
1.0
0.5
10
100
1.0
1.0
-55 to +125
NOTES:
0
80
3.0
40
120
VF
@T A=125℃
56
RΘJA
VBE @ VCE = 1.0 V
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
42
602.0
30
TSTG
Maximum
0.6 Forward Voltage at 1.0A DC
18
80
14. Collector Saturation Region
VBE(sat) @ IC/IB = 10 TJ
0.8
50
1.0
16
60
IFSM
CJ
Typical Junction Capacitance (Note 1)
35
0.220 0.3 30 0.5 400.7
IB, BASE CURRENT (mA)
V , TEMPERATURE COEFFICIENTS (mV/ °C)
0
Maximum
Voltage
0.01DC Blocking
0.02
0.03
15
50
100
200
0
0.50
0.70
0.5
-0.5
10
-1.0
0.92
+25°C TO +125°C
-55°C TO +25°C
VB FOR VBE(sat)
-1.5
-2.0
0.9
0.85
-55°C TO
+25°C
0
20
40
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
180 200
Figure 16. Temperature Coefficients
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBT3906DW1T1
THRU
Dual
Bias
Resistor
Transistor
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
FM1200-M+
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
SOT-363
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection. .087(2.20)
• Ultra high-speed switching.
.071(1.80)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
.054(1.35)
.045(1.15)
MIL-STD-19500 /228
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.030(0.75)
.021(0.55)
.071(1.80)
• RoHS product for packing code suffix "G"
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
Dimensions
in inches and (millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any .056(1.40)
• Weight : Approximated 0.011
gram
.047(1.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VRRM
Maximum Recurrent Peak Reverse Voltage
.016(0.40)
VRMS
.004(0.10)
Maximum RMS Voltage
Maximum DC Blocking Voltage
VDC
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
14
20
13
30
14
40
15
50
18
80
28
35
42
56
70
105
140
50
60
80
100
150
200
Dimensions
RΘJAin inches and (millimeters)
TJ
120
200
40
30
Operating Temperature Range
115
150
30
IFSM
CJ
10
100
21
1.0
Typical Junction Capacitance (Note 1)
Storage Temperature Range
16
60
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
12
20
.043(1.10)
.032(0.80)
Marking Code
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS 0.5 mm (min)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
Rated DC Blocking Voltage
0.50
0.70
0.85
0.9
0.92
0.5
IR
10
0.65 mm 0.65 mm
Maximum Forward Voltage at 1.0A DC
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.4 mm (min)
2- Thermal Resistance From Junction to Ambient
1.9 mm
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.