IXYS DSEI2X101 Fast recovery epitaxial diode (fred) Datasheet

DSEI 2x101
Fast Recovery
Epitaxial Diode (FRED)
VRSM
VRRM
V
V
1200
1200
AC-1
IK-10
LN -9
VX-18
IFAVM = 2x91 A
VRRM = 1200 V
trr
= 40 ns
Type
DSEI 2x 101-12P
D5
Symbol
Conditions
Maximum Ratings (per diode)
IFRMS
IFAVM ①
IFRM
TVJ = TVJM
TC = 50°C; rectangular; d = 0.5
tP < 10 µs; rep. rating; pulse width limited by TVJM
130
91
tbd
A
A
A
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
900
A
-40...+150
150
-40...+150
°C
°C
°C
250
W
2500
3000
V~
V~
1.5 - 2.0
14 - 18
Nm
lb.in.
24
g
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque (M4)
t = 1 min
t=1s
Weight
Symbol
Conditions
Characteristic Values (per diode)
typ.
max.
IR
TVJ = 25°C VR = VRRM
TVJ = 25°C VR = 0.8 • VRRM
TVJ = 125°C VR = 0.8 • VRRM
VF
IF = 100 A;
TVJ = 150°C
TVJ = 25°C
VT0
rT
For power-loss calculations only
TVJ = TVJM
RthJC
RthCK
3.0
1.5
15
mA
mA
mA
1.61
1.87
V
V
1.01
6.1
V
mΩ
0.5
K/W
K/W
0.05
trr
IF = 1 A; -di/dt = 400 A/µs
VR = 30 V; TVJ = 25°C
40
60
ns
IRM
VR = 100 V; IF = 75 A; -diF/dt = 200 A/µs
L ≤ 0.05 µH; TVJ = 100°C
24
30
A
dS
dA
a
Creeping distance on surface
Creeping distance in air
Allowable acceleration
min. 11.2
min. 11.2
max. 50
mm
mm
m/s²
Features
•
•
•
•
•
•
2 independent FRED in 1 package
Isolation voltage 3000 V~
Planar passivated chips
Leads suitable for PC board soldering
Very short recovery time
Soft recovery behaviour
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
• Low noise switching
• Small and light weight
IXYS reserves the right to change limits, test conditions and dimensions
© 2001 IXYS All rights reserved
139
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
1-2
DSEI 2x 101-12P
125
IF
140
TVJ= 100°C
A
VR =600V
120
16 T = 100°C
µC VVJ= 600V
14 R
150
A
IRM
Qr 12
100
100
10
IF=200A
IF=100A
IF= 50A
TVJ=150°C
8
75
TVJ=100°C
80
6
50
TVJ= 25°C
40
4
25
20
2
0
0.0
0.5
IF=200A
IF=100A
IF= 50A
60
1.5 V
VF
1.0
0
100
2.0
Fig. 1 Forward current IF versus VF
0
A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
1.4
500
450
1.2
400
TVJ= 100°C
IF = 100A
50
VFR
400
40
350
30
IF=200A
IF=100A
IF= 50A
300
µs
tfr
tfr
IRM
1.5
1.0
1.0
0.8
D5
600 A/µs
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
V
trr
Kf
200
60
TVJ= 100°C
VR = 600V
ns
0
VFR
20
0.5
Qr
0.6
10
250
0.4
0
200
0
40
80
120 °C 160
0
200
400
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
600 A/µs
800 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
1
K/W
0
200
400
600 800
diF/dt
0.0
1000
A/µs
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Dimensions in mm (1mm = 0.0394“)
D=0.7
ZthJC
0.5
0.3
0.2
0.1
0.1
0.05
Single Pulse
0.05
0.001
DSEI 2x101-12
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to case at various duty cycles
© 2001 IXYS All rights reserved
2-2
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