AOSMD AO4490 N-channel enhancement mode field effect transistor Datasheet

AO4490
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4490/L uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V, while retaining a 20V VGS(MAX)
rating. It is ESD protected. This device is suitable for use as
a load switch and general purpose applications. AO4490
and AO4490L are electrically identical.
-RoHS Compliant
-AO4490L is Halogen Free
VDS (V) = 30V
(VGS = 10V)
ID = 16A
RDS(ON) < 7.2mΩ (VGS = 10V)
RDS(ON) < 10mΩ (VGS = 4.5V)
ESD protected
UIS Tested!
Rg, Ciss,Coss,Crss Tested
S
S
S
G
D
D
D
D
D
G
SOIC-8
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current AF
Pulsed Drain Current
Maximum
30
Units
V
±20
V
16
TA=70°C
B
A
13
ID
IDM
120
Avalanche Current G
IAR
30
A
Repetitive avalanche energy L=0.3mH G
EAR
135
mJ
TA=25°C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Alpha & Omega Semiconductor, Ltd.
2.8
PD
TA=70°C
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.8
RθJA
RθJL
Typ
32
62
18
°C
Max
45
75
24
Units
°C/W
°C/W
°C/W
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AO4490
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
1
5
10
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=16A
TJ=125°C
VGS=4.5V, ID=12A
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VDS=5V, ID=16A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Units
V
TJ=55°C
gFS
Max
30
VDS=30V, VGS=0V
IDSS
IS
Typ
1.8
VGS=0V, VDS=0V, f=1MHz
µA
2.5
V
A
6
7.2
8.5
10
8
10
mΩ
1.0
V
4
A
2170
pF
mΩ
55
0.70
1803
VGS=0V, VDS=15V, f=1MHz
µA
S
387
pF
238
pF
1.3
2
Ω
36
48
nC
19
nC
3.9
nC
Gate Drain Charge
8.7
nC
Turn-On DelayTime
7.6
ns
6.4
ns
27
ns
8.5
ns
Qgs
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=15V, ID=16A
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=16A, dI/dt=100A/µs
27
Qrr
Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs
17
33
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev2: Feb 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4490
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
30
4.5V
4V
5V
VDS=5V
25
90
20
VGS=3.5V
ID(A)
ID (A)
6V
60
125°
15
25°C
10
30
3V
-40°C
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Figure 1: On-Region Characteristics
3
3.5
4
Normalized On-Resistance
1.6
VGS=4.5V
8.0
RDS(ON) (mΩ)
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
10.0
6.0
VGS=10V
4.0
2.0
VGS=10V
ID=16A
1.4
1.2
VGS=4.5V
ID=12A
1
0.8
0.6
0
5
10
15
20
25
30
-60
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-30
0
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+02
20
ID=16
1.0E+01
15
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ)
2
125°C
10
25°C
1.0E-01
1.0E-02
-40°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4490
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
VDS=15V
ID=16A
3000
Capacitance (pF)
VGS (Volts)
8
6
4
2500
Ciss
2000
1500
Coss
1000
2
Crss
500
0
0
0
10
20
30
40
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
10
30
100
10µs
80
RDS(ON)
limited
10.0
10ms
100µ
10s
1ms
1.0
1s
DC
Power (W)
ID (Amps)
100.0
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.01
0.1
TJ(Max)=150°C
TA=25°C
60
40
20
1
VDS (Volts)
10
0
0.0001 0.001
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4490
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
Power Dissipation (W)
TA=10S
2
1
TA=Steady-State
0
0
25
50
75
100
125
150
175
T Ambient (°C)
Figure 12: Power De-rating (Note A)
Alpha & Omega Semiconductor, Ltd.
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