IXYS IXTQ130N10T Trenchmvtm power mosfet n-channel enhancement mode avalanche rated Datasheet

TrenchMVTM
Power MOSFET
IXTH130N10T
IXTQ130N10T
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
= 100V
= 130A
Ω
≤ 9.1mΩ
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
T J = 25°C to 175°C
100
V
VDGR
T J = 25°C to 175°C, RGS = 1MΩ
100
V
VGSM
Transient
± 20
V
ID25
TC = 25°C
130
A
ILRMS
Lead Current Limit, RMS
75
A
IDM
TC = 25°C, pulse width limited by TJM
300
A
IA
TC = 25°C
65
A
EAS
TC = 25°C
500
mJ
PD
TC = 25°C
360
W
-55 ... +175
°C
TJ
TJM
175
°C
Tstg
-55 ... +175
°C
300
260
°C
°C
1.13 / 10
Nm/lb.in.
6.0
5.5
g
g
TL
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Md
Mounting torque (TO-247)(TO-3P)
Weight
TO-247
TO-3P
G
D
S
(TAB)
TO-3P (IXTQ)
G
D
(TAB)
S
G = Gate
S = Source
D
= Drain
TAB = Drain
Features
z
z
z
z
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0V, ID = 250μA
100
VGS(th)
VDS = VGS, ID = 250μA
2.5
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
z
z
4.5
V
5
μA
250
μA
9.1 mΩ
Applications
z
z
z
z
© 2008 IXYS CORPORATION, All rights reserved
Easy to mount
Space savings
High power density
V
±200 nA
TJ = 150°C
z
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99708A(07/08)
IXTH130N10T
IXTQ130N10T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
gfs
55
VDS= 10V, ID = 60A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
C rss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
RG = 5Ω (External)
Qg(on)
Qgs
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A
Qgd
Typ.
TO-247 (IXTH) Outline
Max.
93
S
5080
pF
635
pF
95
pF
30
ns
47
ns
44
ns
28
ns
104
nC
30
nC
29
nC
0.42 °C/W
RthJC
RthCH
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
130
A
ISM
Repetitive, pulse width limited by TJM
350
A
VSD
IF = 25A, VGS = 0V, Note 1
1.0
V
t rr
IRM
Q rr
IF = 25A, VGS = 0V
-di/dt = 100A/μs
VR = 50V
67
ns
4.7
A
160
nC
1
2
∅P
3
e
Terminals: 1 - Gate
2 - Drain
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
4.7
5.3
.185 .209
2.2
2.54
.087 .102
A1
A2
2.2
2.6
.059 .098
b
1.0
1.4
.040 .055
b1
1.65
2.13
.065 .084
b2
2.87
3.12
.113 .123
C
.4
.8
.016 .031
D 20.80 21.46
.819 .845
E
15.75 16.26
.610 .640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780 .800
L1
4.50
.177
∅ P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170 .216
TO-3P (IXTQ) Outline
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
2 - Drain
3 - Source 4, TAB - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTH130N10T
IXTQ130N10T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
280
130
VGS = 10V
8V
120
110
VGS = 10V
9V
240
100
ID - Amperes
ID - Amperes
8V
200
90
80
7V
70
60
50
40
160
120
7V
80
30
6V
20
40
6V
10
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
1
2
3
4
130
7
8
9
10
2.8
VGS = 10V
9V
8V
120
110
2.4
RDS(on) - Normalized
90
80
7V
70
60
50
VGS = 10V
2.6
100
ID - Amperes
6
Fig. 4. RDS(on) Normalized to ID = 65A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
6V
40
2.2
I D = 130A
2.0
1.8
I D = 65A
1.6
1.4
1.2
1.0
30
5V
20
0.8
0.6
10
0
0.4
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 65A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
80
3.0
VGS = 10V
2.8
TJ = 175ºC
15V - - - -
2.6
70
60
2.4
ID - Amperes
RDS(on) - Normalized
5
VDS - Volts
VDS - Volts
2.2
2.0
1.8
1.6
1.4
TJ = 25ºC
50
40
30
20
1.2
10
1.0
0
0.8
0
40
80
120
160
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
200
240
280
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTH130N10T
IXTQ130N10T
Fig. 8. Transconductance
Fig. 7. Input Admittance
130
270
120
240
TJ = - 40ºC
25ºC
150ºC
100
g f s - Siemens
ID - Amperes
210
TJ = - 40ºC
110
180
150
120
90
90
25ºC
80
70
60
150ºC
50
40
30
60
20
30
10
0
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
8.0
20
40
60
VGS - Volts
80
100
120
140
160
180
200
220
90
100
110
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
270
VDS = 50V
9
240
I D = 25A
8
210
I G = 10mA
180
VGS - Volts
IS - Amperes
7
150
120
TJ = 150ºC
90
6
5
4
3
TJ = 25ºC
60
2
30
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
10
20
VSD - Volts
40
50
60
70
80
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.00
Ciss
1,000
Z(th)JC - ºC / W
Capacitance - PicoFarads
30
Coss
100
0.10
Crss
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
IXTH130N10T
IXTQ130N10T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
62
65
RG = 5Ω
VGS = 10V
54
VDS = 50V
55
50
45
40
I
D
RG = 5Ω
58
VGS = 10V
t r - Nanoseconds
t r - Nanoseconds
60
= 50A
VDS = 50V
50
TJ = 25ºC
46
42
38
34
35
TJ = 125ºC
30
I
30
D
= 25A
26
25
22
25
35
45
55
65
75
85
95
105
115
25
125
30
35
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
53
38
80
38
I D = 25A
70
35
60
32
50
29
40
26
30
23
20
10
12
14
16
18
36
60
I D = 25A
34
56
32
52
I D = 50A
30
44
26
25
20
35
45
RG - Ohms
38
66
RG = 5Ω, VGS = 10V
54
30
50
46
TJ = 25ºC
26
24
35
40
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
45
50
t f - Nanoseconds
t f - Nanoseconds
58
t d(off) - Nanoseconds
td(off) - - - -
30
95
105
115
40
125
170
tr
90
62
TJ = 125ºC
25
85
25A < I
td(on) - - - -
D
< 50A
150
TJ = 125ºC, VGS = 10V
VDS = 50V
80
130
70
110
I D = 25A
60
90
I
50
42
40
38
30
D
= 50A
70
t d(off) - Nanoseconds
36
28
75
100
70
VDS = 50V
65
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
32
55
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
34
48
28
20
8
tf
64
RG = 5Ω, VGS = 10V
t d(off) - Nanoseconds
41
t d(on) - Nanoseconds
44
90
6
td(off) - - - -
VDS = 50V
I D = 50A
4
68
tf
47
VDS = 50V
100
50
40
50
TJ = 125ºC, VGS = 10V
110
t r - Nanoseconds
td(on) - - - -
t f - Nanoseconds
tr
45
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
130
120
40
ID - Amperes
50
30
4
6
8
10
12
14
16
18
20
RG - Ohms
IXYS REF: T_130N10T(V3)07-29-08-A
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