Renesas H5N1503P Silicon n channel mos fet high speed power switching Datasheet

H5N1503P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0186-0100Z
Rev.1.00
Mar.10.2004
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
TO-3P
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
150
±30
70
210
70
35
91.8
150
0.833
150
–55 to +150
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.1.00, Mar.10.2004, page 1 of 6
H5N1503P
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
150
—
—
3.0
—
—
—
—
—
1
±0.1
4.0
V
µA
µA
V
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
RDS(on)
27
—
46
0.022
—
0.027
S
Ω
ID = 35 A, VDS = 10 V Note4
ID = 35 A, VGS = 10 VNote4
Ciss
Coss
Crss
td(on)
tr
td(off)
—
—
—
—
—
—
5100
770
140
60
290
200
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
VDS = 25 V
VGS = 0
f = 1 MHz
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
tf
Qg
Qgs
Qgd
VDF
trr
—
—
—
—
—
—
190
135
30
60
1.1
180
—
—
—
—
1.7
—
ns
nC
nC
nC
V
ns
Body-Drain diode reverse recovery
charge
Qrr
—
1.2
—
µC
Notes: 4. Pulse test
Rev.1.00, Mar.10.2004, page 2 of 6
ID = 35 A
VGS = 10 V
RL = 2.14 Ω
Rg = 10 Ω
VDD = 120 V
VGS = 10 V
ID = 70 A
IF = 70 A, VGS = 0 Note4
IF = 70 A, VGS = 0
diF/dt = 100 A/µs
H5N1503P
Main Characteristics
Power vs. Temperature Derating
ID (A)
300
150
100
100
50
PW
DC
30
Drain Current
Pch (W)
Channel Dissipation
Maximum Safe Operation Area
1000
200
er
10
1s
ho
t)
(T
25
Operation in
1 this area is
limited by RDS(on)
°C
)
0.3
0
50
100
Case Temperature
Ta = 25°C
150
200
1
Tc (°C)
VDS = 10 V
Pulse Test
6.5 V
80
6V
60
40
5.5 V
20
VGS = 5 V
ID (A)
8V
200
Drain Current
10 V
30
3
10
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
100
ID (A)
s(
3
µs
s
m
at
ion
0µ
s
10
c=
0.1
Drain Current
Op
=
10
10
1m
160
120
80
40
Tc = 75°C
Pulse Test
0
4
8
12
Drain to Source Voltage
0
16
20
VDS (V)
Drain to Source Saturation Voltage
VDS(on) (V)
2.5
Pulse Test
2
I D = 70 A
1.5
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
25°C
–25°C
2
4
6
Gate to Source Voltage
8
10
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
VGS = 10 V
0.1
0.05
1
35 A
0.02
0.5
10 A
0
0.01
12
4
8
Gate to Source Voltage
Rev.1.00, Mar.10.2004, page 3 of 6
16
20
VGS (V)
1
2
5
10 20
50
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
0.100
Pulse Test
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
H5N1503P
V GS = 10 V
0.080
I D = 70 A
0.060
0.040
35 A
10 A
0.020
0
–40
0
40
80
120
Case Temperature Tc (°C)
100
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
V DS = 10 V
Pulse Test
0.5
0.2
0.2
160
0.5 1
500
20000
Capacitance C (pF)
50000
Reverse Recovery Time trr (ns)
1000
200
100
50
10
0.1
Ciss
2000
1000
Coss
500
200
Crss
100
50
0
20
40
60
Drain to Source Voltage
V DS = 30 V
60 V
120 V
VGS
VDD
16
12
8
V DS = 120 V
60 V
30 V
40
80
120
160
Gate Charge Qg (nC)
Rev.1.00, Mar.10.2004, page 4 of 6
4
0
200
80
100
VDS (V)
Switching Characteristics
10000
Switching Time t (ns)
I D = 70 A
VGS (V)
20
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
0
ID (A)
5000
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
180
60
Drain Current
50 100
10000
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
240
120
10 20
VGS = 0
f = 1 MHz
Dynamic Input Characteristics
300
5
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
20
2
V GS = 10 V, V DD = 75 V
PW = 5 µs, duty < 1 %
R G =10 Ω
tf
1000
tr
t d(off)
tf
100
t d(on)
tr
10
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H5N1503P
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Reverse Drain Current
160
120
V GS = 0 V
80
10 V
40
5V
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
Gate to Source Cutoff Voltage
V GS(off) (V)
IDR (A)
200
V DS = 10 V
4
I D = 10mA
3
1mA
0.1mA
2
1
0
-50
VSD (V)
0
50
100
150
Case Temperature Tc (°C)
200
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.833°C/W, Tc = 25°C
0.1
0.05
PDM
0.03
0.02
1
0.0
0.01
10 µ
D=
e
PW
uls
p
ot
T
h
1s
PW
T
100 µ
1m
10 m
100 m
Pulse Width PW (s)
Switching Time Test Circuit
1
Waveform
Vout
Monitor
Vin Monitor
10
90%
D.U.T.
RL
Vin
10Ω
Vin
10 V
V DD
= 75 V
Vout
10%
10%
90%
td(on)
Rev.1.00, Mar.10.2004, page 5 of 6
tr
10%
90%
td(off)
tf
H5N1503P
Package Dimensions
15.6 ± 0.3
Unit: mm
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
As of January, 2003
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
TO-3P
—
Conforms
5.0 g
Ordering Information
Part Name
Quantity
Shipping Container
H5N1503P-E
30 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, Mar.10.2004, page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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