Diode Semiconductor Korea MBR3030CT - - - MBR30100CT VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A SCHOTTKY BARRIER RECTIFIERS FEATURES TO-220AB 2.8± 0.1 High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 4.5± 0.2 10.2± 0.2 1.4± 0.2 φ 3.8± 0.15 19.0± 0.5 High current capacity, low forward voltage drop. Guard ring for over voltage protection. 1 8.9± 0.2 Metal s ilicon junction, m ajority carrier conduction. PIN 2 3 2.6± 0.2 3.5± 0.3 13.8± 0.5 MECHANICAL DATA Cas e:JEDEC TO-220AB,m olded plas tic body 0.9± 0.1 Term inals :Solderable per MIL-STD-750, 1 1 0.5± 0.1 2.5± 0.1 Method 2026 Polarity: As m arked PIN 1 Positive CT Pos ition: Any PIN 1 PIN 1 PIN 3 CASE PIN 2 PIN 3 Negative CT Suffix "A" CASE PIN 2 Weight: 0.071ounce, 2.006 grams CASE PIN 2 PIN 3 Doubler Suffix "D" Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBR MBR MBR MBR MBR MBR MBR MBR UNITS 3030CT 3035CT 3040CT 3045CT 3050CT 3060CT 3080CT 30100CT Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 80 100 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 56 70 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 80 100 V Maximum average forw ard total device m rectified current @TC = 105°C IF(AV) 30 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 200 A Maximum forward voltage (Note 1) (IF=15A,TC=25 ) (I F=15A,TC=125 (I F=30A,TC=25 ) ) VF (I F=30A ,TC=125 ) Maximum reverse current at rated DC blocking voltage @TC =25 @TC =125 IR 0.80 0.85 0.57 0.84 0.70 0.95 0.65 0.95 0.72 0.85 0.75 1.0 0.2 60 40 6.8 4.4 mA Maximum thermal resistance (Note2) R θJC Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Storage temperature range V /W NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. Thermal resistance from junction to case. www.diode.kr MBR3030CT- - - MBR30100CT Diode Semiconductor Korea FIG.2 -- FORWARD DERATING CURVE 160 8.3ms Single Half Sine Wave TJ=125 120 80 40 0 1 10 100 AVERAGE FORWARD OUTPUT CURRENT, AMPERES 200 AMPERES PEAK FORWARD SURGE CURRENT, FIG.1 -- PEAK FORWARD SURGE CURRENT 30 24 18 12 6.0 0 25 50 NUMBER OF CYCLES AT 60HZ Pulse width = 300 µs 1% Duty Cycle 100 TJ=125 TJ =25 10 1 MBR3030CT-MBR3045CT MBR3050CT-MBR3060CT MBR3080CT-MBR30100CT .1 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3 1.4 1.5 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 125 150 CASE TEMPERATURE, FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES 500 AMPERES INSTANTANEOUS FORWARD CURRENT, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 75 10 MBR3030CT-MBR3060CT MBR3080CT-MBR30100CT 1 MBR3030CT-MBR3060CT .1 MBR3080CT-MBR30100CT .01 TC=125℃ TC=25℃ 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr