Central CMUT5551 Npn silicon transistor Datasheet

Central
TM
Semiconductor Corp.
CMUT5551
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT5551
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
voltage amplifier applications.
MARKING CODE: 55C
SOT-523 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
600
mA
Power Dissipation
PD
250
mW
TJ,Tstg
-65 to +150
°C
ΘJA
500
°C/W
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
SYMBOL
MAX
UNITS
50
nA
50
µA
ICBO
ICBO
VCB=120V
VCB=120V, TA=100°C
BVCBO
IC=100µA
IC=1.0mA
180
160
V
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
6.0
V
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
V
0.15
V
0.20
V
1.00
V
1.00
V
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
80
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
30
100
300
MHz
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
6.0
pF
50
200
VCE=5.0V, IC=200µA, RS=10Ω
f=10Hz to 15.7kHz
80
250
8.0
dB
R0 (28-October 2004)
Central
TM
CMUT5551
Semiconductor Corp.
NPN SILICON TRANSISTOR
SOT-523 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: 55C
R0 (28-October 2004)
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