Diodes MMDT5551 Dual npn small signal surface mount transistor Datasheet

SPICE MODEL: MMDT5551
MMDT5551
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
Epitaxial Planar Die Construction
B1
C2
Ideal for Medium Power Amplification and Switching
B C
Lead Free/RoHS Compliant (Note 3)
B2
·
·
·
·
C1
G
H
Mechanical Data
·
·
·
E1
Ultra-Small Surface Mount Package
E2
·
·
SOT-363
A
Complementary PNP Type Available (MMDT5401)
K
M
Case: SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
Moisture Sensitivity: Level 1 per J-STD-020C
L
0.25
0.40
Terminals: Solderable per MIL-STD-202, Method 208
M
0.10
0.25
a
0°
8°
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
J
D
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
C2
B1
F
L
E1
All Dimensions in mm
Terminal Connections: See Diagram
Marking (See Page 2): K4N
E2
Ordering & Date Code Information: See Page 2
B2
C1
Weight: 0.006 grams (approx.)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
IC
200
mA
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1, 2)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Notes:
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
DS30172 Rev. 7 - 2
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MMDT5551
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Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
180
¾
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
¾
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
¾
V
IE = 10mA, IC = 0
Collector Cutoff Current
ICBO
¾
50
nA
mA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C
Emitter Cutoff Current
IEBO
¾
50
nA
VEB = 4.0V, IC = 0
hFE
80
80
30
¾
250
¾
¾
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
¾
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
¾
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Cobo
¾
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
¾
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
¾
8.0
dB
OFF CHARACTERISTICS (Note 4)
IC = 100mA, IE = 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Ordering Information
Notes:
VCE = 5.0V, IC = 200mA,
RS = 1.0kW, f = 1.0kHz
(Note 5)
Device
Packaging
Shipping
MMDT5551-7-F
SOT-363
3000/Tape & Reel
4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
K4N
K4N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
K4N
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30172 Rev. 7 - 2
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MMDT5551
0.15
200
IC
= 10
IB
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
PD, POWER DISSIPATION (mW)
0.14
150
100
50
0.13
0.12
TA = 150°C
0.11
0.10
0.09
0.08
TA = 25°C
0.07
0.06
0.05
TA = -50°C
0.04
0
0
25
50
75
100
125
150
175
200
1
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
1.0
1000
VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 5V
TA = 150°C
hFE, DC CURRENT
GAIN (NORMALIZED)
10
100
TA = 25°C
TA = -50°C
10
VCE = 5V
0.9
TA = -50°C
0.8
0.7
TA = 25°C
0.6
0.5
0.4
TA = 150°C
0.3
0.2
1
10
1
100
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs
Collector Current
fT, GAIN BANDWIDTH PRODUCT (MHz)
1000
VCE = 5V
100
10
1
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs.
Collector Current
DS30172 Rev. 7 - 2
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MMDT5551
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the express written approval of Diodes Incorporated.
DS30172 Rev. 7 - 2
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MMDT5551
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