WINNERJOIN MBTA06LT1 Npn epitaxial silicon transistor Datasheet

RoHS
MBTA06LT1
NPN EPITAXIAL SILICON TRANSISTOR
D
T
,. L
* High Collector-Emitter Voltage:Vcbo=80V
* Collector Current: Ic=500mA
* Collector Dissipation: Pc=225mW(Ta=25 )
1.
Symbol
Rating
Vcbo
80
V
Collector-Emitter Voltage
Vceo
80
V
Emitter-Base Voltage
Veb
4
V
Collector Current
Ic
500
mA
Collector Dissipation Ta=25 *
PD
225
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55-150
R
T
Characteristic
Collector-Base Breakdown Voltage
O
Collector-Emitter
Voltage#
Breakdown
C
E
L
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
E
Symbol
Min
BVcbo
80
BVceo
BVebo
0.95
2.9
1 .9
Collector-Base Voltage
ELECTRICAL CHARACTERISTICS at Ta=25
IC
N
Typ
Max
Unit
C
O
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
Test Conditions
V
Ic=100uA Ie=0
80
V
Ic= 1mA
4
V
Ie= 100uA Ic=0
Ib=0
Icbo
100
nA
Vcb= 80V Ie=0
Ices
100
nA
Vce= 60V Ib= 0
Hfe1
80
Hfe2
80
250
Vce=1V Ic=10mA
Vce=1V Ic=100mA
Collector-Emitter Saturation Voltage
Vce(sat)
0.25
V
Ic=100mA Ib=10mA
Base-Emitter On Voltage
Vbe(on)
1.2
V
Ic=100mA Vce=1V
MHz
Vce=2V Ic=10mA
J
E
Current Gain-Bandwidth Product
W
Unit
0.95
Characteristic
2.4
1.3
0.4
ABSOLUTE MAXIMUM RATINGS at Ta=25
fT
100
f=100MHz
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
#
Pulse Test : Pulse Width
300uS,Duty cycle
2%
DEVICE MARKING:
MMBTA06LT1=1G
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
Similar pages