GeneSiC GBU4G Single phase glass passivated silicon bridge rectifier Datasheet

GBU4A thru GBU4G
Single Phase Glass Passivated
Silicon Bridge Rectifier
VRRM = 50 V - 400 V
IO = 4 A
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• High case dielectric strength of 1500 VRMS
• Glass passivated chip junction
GBU Package
• Ideal for printed circuit boards
• High surge overload rating
• High temperature soldering guaranteed: 260⁰C/ 10
seconds, 0.375 (9.5mm) lead length
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads, solderable per MIL-STD-750 Method 2026.
Mounting position: Any
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
GBU4A
GBU4B
GBU4D
GBU4G
Unit
100
200
400
V
Repetitive peak reverse voltage
VRRM
50
RMS reverse voltage
VRMS
35
70
140
280
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
400
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Conditions
GBU4A
GBU4B
GBU4D
GBU4G
Unit
IO
Tc = 100 °C
4.0
4.0
4.0
4.0
A
IFSM
tp = 8.3 ms, half sine
150
150
150
150
A
Maximum instantaneous forward
voltage drop per leg
VF
IF = 4 A
1.1
1.1
1.1
1.1
V
Maximum DC reverse current at
rated DC blocking voltage per leg
IR
Ta = 25 °C
5
5
5
5
Rating for fusing
I2 t
Ta = 125 °C
500
93
500
93
500
93
500
93
A2sec
Typical junction capacitance per
leg 3
Cj
100
100
100
100
pF
RΘJA
22
22
22
22
RΘJL
4.2
4.2
4.2
4.2
Parameter
Maximum average forward rectified
current 1,2
Peak forward surge current
Typical thermal resistance per leg 1,2
1
Symbol
t < 8.3 ms
- Device mounted on 40 mm x 40 mm x 1.5 mm Al plate heatsink
2
- Recommended mounted position is to bolt down device on a heatsink with silicon
thermal compond for maximum heat transfer using #6 screw.
3
- Measured at 1.0 MHz and applied reverse bias of 4.0 V
www.genesicsemi.com/silicon-products/bridge-rectifiers/
1
μA
°C/W
GBU4A thru GBU4G
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2
GBU4A thru GBU4G
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
Di
Dimensions
i
iin iinches
h and
d ((millimeters)
illi t )
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3
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