Rohm BD7150NUV-E2 Headphone amplifier designed for 0.93v low voltage operation Datasheet

Compact Headphone Amplifiers
Headphone Amplifier
Designed for 0.93V Low Voltage Operation
BU7150NUV
No.11102ECT01
●Description
BU7150NUV is Audio Amplifier designed for Single-cell battery operated audio products (VDD = 0.93 ~ 3.5V, at Ta=0~85°C).
BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operations. For
BU7150NUV at VDD = 1.5V, THD+N = 1%, the output power is 14mW at RL = 16Ω in single-ended mode and the output
power is 85mW at RL = 8Ω in BTL mode.
●Features
1) Wide battery operation Voltage (0.93V~3.5V, Ta=0~85°C) (1.03V~3.5V, Ta= -40~85°C)
2) BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operation
3) Unity-gain stability
4) Click and pop-noise reduction circuit built-in
5) Shutdown mode(Low power mode)
6) High speed turn-on mute mode
7) Thermal shutdown protection circuit
8) Power-on reset circuit not sensed during start-up slew rate of supply voltage
9) Small package (VSON010V3030)
●Applications
Noise-canceling headphone, IC recorder, Mobile phone, PDA, Electronic toys etc..
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VDD
4.5
V
Input Voltage
VIN
VSS-0.3~VDD+0.3
V
Input Current
IIN
-10~10
mA
Power Dissipation
PD
560 *
mW
TSTG
-55~+150
°C
Storage Temperature Range
*For operating over 25°C, de-rate the value at 5.6mW/°C.
This value is for IC mounted on 74.2 mm x 74.2mm x 1.6mm glass-epoxy PCB of single-layer.
●Operating conditions
Parameter
Operation Temperature Range
Supply Voltage (Note 1,2)
Symbol
Ratings
Unit
Min.
Typ.
Max.
TOPR
-40
-
85
°C
VDD
0.93
-
3.5
V
Note 1: If the supply voltage is 0.93V, BU7150NUV does not operate at less than 0°C.
If the supply voltage is more than 1.03V, BU7150NUV operates until -40°C.
(But, it is not the one which guarantees the standard value for electric characteristics.)
Note 2: Ripple in power supply line should not exceed 400mVP-P.(VDD=1.5 V, Ta=25°C )
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1/16
2011.05 - Rev.C
Technical Note
BU7150NUV
●Electrical characteristics
Ta=25°C, VDD=1.5V, f=1kHz, VSS=GND unless otherwise specified.
Limits
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
No Signal Operating Current
IDD
-
1
1.4
mA
No load, No signal
Shutdown Current
ISD
-
3
9
μA
SDB Pin=VSS
Mute Current
IMUTE
-
15
-
μA
MUTEB Pin=VSS, SE
Output Offset Voltage
VOFS
-
5
50
mV
| VOUT1 – VOUT2 |, No signal
70
85
-
mW
RL=8Ω, BTL, THD+N=1%
-
14
-
mW
RL=16Ω, SE, THD+N=1%
-
0.2
0.5
%
20kHz LPF, RL=8Ω, BTL, PO=25mW
-
0.1
0.5
%
20kHz LPF, RL=16Ω, SE,PO=5mW
VNO
-
10
-
μVrms
CT
-
85
-
dB
-
62
-
dB
-
66
-
dB
Maximum Output Power
PO
Total Harmonic Distortion +Noise
Output Voltage Noise
Crosstalk
Power Supply Rejection Ratio
THD+N
PSRR
20kHz LPF + A-weight
RL=16Ω, SE, 1kHz BPF
Ripple voltage=200mVP-P,
RL=8Ω, BTL, CBYPASS=4.7μF
Ripple voltage=200mVP-P,
RL=16Ω, SE, CBYPASS=4.7μF
Input Logic High Level
VIH
0.7
-
-
V
MUTEB Pin, SDB Pin
Input Logic Low Level
VIL
-
-
0.3
V
MUTEB Pin, SDB Pin
“BTL” is BTL-mode when MODE Pin = VDD, “SE” is single-ended mode when MODE Pin = VSS.
Turn-on time in BTL mode is about 11 times faster than single-ended mode.
Also, BTL mode does not have MUTE mode. When MUTEB Pin = VSS, then it will be shutdown mode.
●Block diagram
IN1 1
10
SDB 2
VDD
9 OUT1
Control Logic
MUTEB 3
BYPASS 4
8 MODE
Bias
Generator
IN2 5
7 OUT2
6 VSS
TOP VIEW
Fig. 1 Block diagram
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2/16
2011.05 - Rev.C
Technical Note
BU7150NUV
●Electrical characteristics waveform (Reference data)
Ta=25°C, f=1kHz, VSS=GND unless otherwise specified. Using circuits are Fig.34 and Fig.35.
Also, RL=16Ω for single ended mode, RL=8Ω for BTL mode)
0
0
VDD=1.5V, BTL m ode
-10
-10
-20
-20
THD+N [dB]
THD+N [dB]
VDD=1.5V, SE m ode
-30
-40
-50
-30
-40
-50
-60
-60
-70
-70
10n
100n
1u
10u 100u 1m 10m 100m
Output Power [W]
Fig. 2 THD+N vs . Output Power
10n
-10
-20
-20
-30
-40
-50
-30
-40
-50
-60
-60
10n
100n
1u
10u
100u
1m
10m 100m
10n
Output Power [W]
Fig. 4 THD+N vs . Output Power
0
100n
1u
10u 100u 1m 10m 100m
Output Power [W]
Fig. 5 THD+N vs . Output Power
0
VDD=1.5V, Po=5m W,
SE m ode, BW<80kHz
VDD=1.5V, Po=25m W,
BTL m ode, BW<80kHz
-10
-20
-20
-30
-30
THD+N [dB]
THD+N [dB]
10u 100u 1m 10m 100m
Output Power [W]
Fig. 3 THD+N vs . Output Power
VDD=1.2V, BTL m ode
-10
THD+N [dB]
THD+N [dB]
VDD=1.2V, SE m ode
-40
-50
-40
-50
-60
-60
-70
-70
-80
-80
10
100
1k
10k
Frequency [Hz]
Fig. 6 THD+N vs . Frequency
100k
10
100
1k
10k
Frequency [Hz]
Fig. 7 THD+N vs . Frequency
100k
0
0
VDD=1.2V, Po=2.5m W,
SE m ode, BW<80kHz
-10
VDD=1.2V, Po=10m W,
BTL m ode, BW<80kHz
-10
-20
-20
-30
-30
THD+N [dB]
THD+N [dB]
1u
0
0
-10
100n
-40
-50
-40
-50
-60
-60
-70
-70
-80
-80
10
100
1k
10k
Frequency [Hz]
Fig. 8 THD+N vs . Frequency
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100k
10
3/16
100
1k
10k
Frequency [Hz]
Fig. 9 THD+N vs . Frequency
100k
2011.05 - Rev.C
Technical Note
BU7150NUV
0
0
VDD=1.5V, SE m ode
-10
-10
VDD=1.5V, BTL m ode
-20
Output Level [dBV]
Output Level [dBV]
-20
-30
-40
-50
-60
-70
-80
-30
-40
-50
-60
-70
-80
-90
-90
-100
-100
-100
-80
-60
-40
-20
0
-100
Input Level [dBV]
Fig. 10 Output Level vs . Input Level
-20
0
VDD=1.2V, BTL m ode
-20
Output Level [dBV]
-20
Output Level [dBV]
-40
0
VDD=1.2V, SE m ode
-40
-60
-80
-100
-40
-60
-80
-100
-120
-120
-120
-100
-80
-60
-40
-20
0
-120
Input Level [dBV]
Fig. 12 Output Level vs . Input Level
-100
-80
-60
-40
-20
0
Input Level [dBV]
Fig. 13 Output Level vs . Input Level
10
10
0
0
-10
-10
Gain [dB]
Gain [dB]
-60
Input Level [dBV]
Fig. 11 Output Level vs . Input Level
0
-20
-30
-40
-20
-30
-40
VDD=1.5V, Po=5m W, SE m ode
VDD=1.5V, Po=25m W, BTL m ode
-50
-50
10
100
1k
10k
100k
Frequency [Hz]
Fig. 14 Gain vs . Frequency
1M
10
10
10
0
0
-10
-10
Gain [dB]
Gain [dB]
-80
-20
-30
-40
100
1k
10k
100k
Frequency [Hz]
Fig. 15 Gain vs . Frequency
1M
-20
-30
-40
VDD=1.2V, Po=2.5m W, SE m ode
VDD=1.2V, Po=10m W, BTL m ode
-50
-50
10
100
1k
10k
100k
Frequency [Hz]
Fig. 16 Gain vs . Frequency
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1M
10
4/16
100
1k
10k
100k
Frequency [Hz]
Fig. 17 Gain vs . Frequency
1M
2011.05 - Rev.C
Technical Note
BU7150NUV
1000
SE m ode
900
120
800
100
700
Power [mW]
Power [mW]
140
80
60
THD+N = 10%
40
THD+N = 1%
600
500
400
0
0
2
3
4
Supply Voltage [V]
Fig. 18 Maxim um output Power vs . Supply Voltage
1
0
2
3
4
Supply Voltage [V]
Fig. 19 Maxim um output Power vs . Supply Voltage
40
200
SE m ode
Zoom up
35
1
BTL m ode
Zoom up
180
160
30
140
25
Power [mW]
Power [mW]
THD+N = 1%
100
0
20
15
THD+N = 10%
10
120
100
80
THD+N = 10%
60
40
THD+N = 1%
5
× :WC(PO=70m W
THD+N=1%)
THD+N = 1%
20
0
0
0.0
0.0
1.0
1.5
2.0
Supply Voltage [V]
Fig. 21 Maxim um output Power vs . Supply Voltage
1.0
1.5
2.0
Supply Voltage [V]
Fig. 20 Maxim um output Power vs . Supply Voltage
0.5
-20
VDD=1.5V, Input=200m VP-P,
SE m ode, Input Term inated into 10Ω
-10
-30
PSRR [dB]
-40
-50
-60
-40
-50
-60
-70
-70
-80
-80
-90
-90
10
100
1k
10k
Frequency [Hz]
Fig. 22 PSRR vs . Frequency
10
100k
0
-20
VDD=1.5V, Input=200m VP-P,
BTL m ode, Input Term inated into 10Ω
-20
-30
-10
0.5
0
0
-10
PSRR [dB]
THD+N = 10%
300
200
20
100
1k
10k
Frequency [Hz]
Fig. 23 PSRR vs . Frequency
100k
0
VDD=1.2V, Input=200m VP-P,
SE m ode, Input Term inated into 10Ω
VDD=1.2V, Input=200m VP-P,
BTL m ode, Input Term inated into 10Ω
-10
-20
-30
-30
PSRR [dB]
PSRR [dB]
BTL m ode
-40
-50
-60
-40
-50
-60
-70
-70
-80
-80
-90
-90
10
100
1k
10k
Frequency [Hz]
Fig. 24 PSRR vs . Frequency
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100k
10
5/16
100
1k
10k
Frequency [Hz]
Fig. 25 PSRR vs . Frequency
100k
2011.05 - Rev.C
Technical Note
BU7150NUV
-40
-40
VDD=1.5V, Input=400m VP-P,
SE m ode, Input Term inated into 10Ω
-50
-60
Crosstalk [dB]
Crosstalk [dB]
-60
-70
-80
-90
-80
-90
-100
-110
-110
-120
10
0
100
1k
10k
Frequency [Hz]
Fig. 26 Cros s talk vs . Frequency
10
100k
0
VDD=1.5V, SE m ode, 20kHz LPF + A-weight
-20
-40
-60
-80
-100
-120
100
1k
10k
Frequency [Hz]
Fig. 27 Cros s talk vs . Frequency
100k
VDD=1.5V, BTL m ode, 20kHz LPF + A-weight
-20
Noise Level [dBV]
Noise Level [dBV]
-70
-100
-120
-40
-60
-80
-100
-120
-140
-140
-160
-160
10
100
1k
10k
Frequency [Hz]
Fig. 28 Nois e Level vs . Frequency
10
100k
100
1k
10k
Frequency [Hz]
Fig. 29 Nois e Level vs . Frequency
100k
4.5
1.2
SE m ode, Input=no s ignal
SE m ode, Input=no s ignal
4
1
3.5
3
ISD [μA]
0.8
IDD [mA]
VDD=1.2V, Input=400m VP-P,
SE m ode, Input Term inated into 10Ω
-50
0.6
0.4
2.5
2
1.5
1
0.2
0.5
0
0
0
1
2
3
Supply Voltage [V]
Fig. 30 IDD vs . Supply Voltage
0
4
1
2
3
Supply Voltage [V]
Fig. 31 ISD vs . Supply Voltage
4
-50
VDD=1.5V, Input=400m VP-P, SE m ode
-55
MUTE Level [dB]
-60
-65
-70
-75
-80
-85
-90
10
100
1k
10k
Frequem cy [Hz]
Fig. 32 MUTE Level vs . Frequency
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100k
6/16
2011.05 - Rev.C
Technical Note
BU7150NUV
●Application Circuit
+
+
+
+
+
・Resistors RF1, RF2 should be used in 20kΩ~1MΩ range.
・For gain setting greater than 4 times, then RC1, RC2, CC1, CC2 can be eliminated.
Fig. 34 Single-ended mode application circuit
+
+
・Resistors RF1, RF2 should be used in 20kΩ~1MΩ range
Fig. 35 BTL mode application circuit
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7/16
2011.05 - Rev.C
Technical Note
BU7150NUV
●Pin Configuration
No.
Pin Name
1
IN1
Input Pin 1
A
2
SDB
Shutdown Pin (OFF at L)
C
3
MUTEB
Mute Pin (Mute at L)
C
4
BYPASS
Bypass Pin
D
5
IN2
Input Pin 2
A
6
VSS
GND Pin
-
7
OUT2
Output Pin 2
B
8
MODE
Mode Select Pin (SE at VSS, BTL at VDD)
A
9
OUT1
Output Pin 1
B
10
VDD
Power Supply Pin
-
Function
I/O equal circuit
●I/O equal circuit (Fig. 36)
VDD
VDD
VDD
IN1
IN2
MODE
VDD
OUT1
OUT2
50Ω
A
B
VDD
SDB
MUTEB
2kΩ
C
VDD
VDD
VDD
BYPASS
600kΩ
100kΩ
100kΩ
D
Fig.36 I/O equal circuit
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8/16
2011.05 - Rev.C
Technical Note
BU7150NUV
●Functional descriptions
[Timing Chart]
BU7150NUV can control many mode states. “Active” is normal operation state for output signal. “Shutdown” is IC power
down state for low power. “Mute” is Headphone amplifier power down state for low power and fast turn-on, because
keeping BIAS voltage = VDD/2. “Turn on” and “Turn off” are sweep state.
Fig. 37 Timing Chart (MODE = VSS: Single-ended mode)
Fig. 38 Timing Chart (MODE = VDD: BTL- mode)
Also, BU7150NUV has wait time for reduction of pop-sound at turn-on and turn-off. Turn-on wait time is 70msec from IN1
voltage = VDD/2. Turn-off wait time is 140msec from BYPASS voltage = 100mV. Please don't change SDB, MUTEB
condition at 70msec and 140msec wait- time.
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9/16
2011.05 - Rev.C
Technical Note
BU7150NUV
[About Time until Signal Output]
BU7150NUV need wait-time for BIAS charge sweep time and pop-noise reduction.
In the Fig. 37, Ts1 is BIAS charge sweep time from power on or SDB=H. Ts2 is time until signal output from power on or
SDB=H. Also, in the Fig. 38, Tb1 is BIAS charge sweep time from power on. Tb2 is time until signal output from power on.
Tb3 is BIAS charge sweep time from SDB=H. Tb4 is time until signal output from SDB=H.
These values are decided equation (1) ~ (6). However, BIAS charge sweep time (Ts1, Tb1, Tb3) have uneven ±50%, and
wait-time (70msec) is 40msec ~ 126msec for process parameter distribution. (Ta=25°C)
Ts1 
VDD  CBYPASS
[sec]
2.5  10 6
Ts2  Ts1  0.07[sec]
Tb1 
・・・(2)
VDD  2  CBYPASS [sec]
27.5  10
6
Tb2  Tb1  0.07[sec]
Tb3 
・・・(1)
・・・( 4)
VDD  CBYPASS
[sec]
27.5  10 6
Tb4  Tb3  0.07[sec]
・・・(3)
・・・(5)
・・・(6)
In the Fig. 38, Tb1 and Tb3 is differ value, because BU7150NUV’s default is single-ended mode. BU7150NUV need
BYPASS>100mV to recognize for BTL mode.
Also, Td is delay time to CI1=VDD/2 from BYPASS=VDD/2. Td is decided by CI1, RI1, and RF1.
Fig. 39 Flow of Time until Signal Output
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10/16
2011.05 - Rev.C
Technical Note
BU7150NUV
[Operation mode]
・Selecting operation mode
BU7150NUV has two OPAMP in the IC (Fig. 1). BU7150NUV is selected for BTL-mode for mono speaker and
single-ended mode for stereo headphone operation. Mode is composed of external parts and internal control (Fig. 34, 35)
BU7150NUV operates at single-ended mode when MODE pin (pin8) = 0V turn on. BTL mode is operated when MODE
pin (pin8) = VDD turn on. BYPASS voltage = 100mV then operation mode is decided by internal comparator by detecting
MODE voltage.
The difference between Single-ended mode and BTL-mode is mentioned in the following table.
Single ended mode
MODE='VSS'
BTL mode
MODE='VDD'
enable
disenable
Bypass voltage turn on time [Ts1, Tb1, Tb3]
(CBYPASS=4.7μF)
Ts1=2.82sec
Tb1=598msec
Tb3=256msec
Time until Signal Output [Ts2, Tb2,
Tb4](CBYPASS=4.7μF)
Ts2=2.89sec
Tb1=668msec
Tb3=326msec
Maximum Output Power (THD=1%)
14mW
85mW
Total Harmonic Distortion + Noise
0.10%
0.20%
Power Supply Rejection Ratio
66dB
62dB
Parameter
Mute function
(Ta=25℃, VDD=1.5V, f=1kHz)
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11/16
2011.05 - Rev.C
Technical Note
BU7150NUV
・Single-Ended mode
Single-ended mode can be use for stereo headphone amplifier using two internal amplifiers. BU7150NUV can select
amplifier gain Av using external parts. (Fig. 34) Two amplifiers gain Av is decided by input resistance RI1, RI2 and feedback
resistance RF1, RF2 aspect. Also, Please, use RF1, RF2 value in the range 20kΩ~1MΩ.
AV  
RF
RI
Amplifier outputs (OUT1, OUT2) need coupling capacitors in single-ended mode operation. Coupling capacitors reduce
DC-voltage at the output and to pass the audio signal.
Single-ended mode has mute mode. Mute mode reduces pop noise and low power (typ. 15μA when MUTEB pin = Low.
Rise time is high-speed though current consumption increases more than the state of the shutdown so that the state of
the mute may keep the output level at the bias level. Mute level is decided by input resistance RI1, RI2 and feedback
resistance RF1, RF2 and RL
Mute level [dB]
 20Log
RL
RI  RF
BU7150NUV needs phase-compensation circuit using external parts. (Fig. 34) But, for amplifier gain Av > 4 then phase
compensation circuit may be eliminated.
・BTL mode
BTL mode can be used for mono speaker amplifier using two internal amplifiers. BU7150NUV can select amplifier gain Av
using external parts. (Fig. 35) 1st stage gain is decided by selecting external parts. But 2nd stage gain = 1. 1st stage
output signal and 2nd stage output signal are of same amplitude but phase difference of 180°.
Amplifiers gain Av is decided by input resistance RI1 and feedback resistance RF1 aspect. Also, Please, use RF1, RF2 value
in range of 20kΩ~1MΩ.
AV  2
R F1
RI1
BU7150NUV has no output pop noise at BTL mode operation, because output coupling capacitor is not charged.
Therefore, BTL mode is faster by 11 times compared to single-ended mode. SDB pin and MUTEB pin are same function
in BTL mode operation.
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12/16
2011.05 - Rev.C
Technical Note
BU7150NUV
[About Maximum Output Power]
Maximum output power of audio amplifier is reduced line impedance. Please, design to provide low impedance for the
wiring between the power source and VDD pin of BU7150NUV. Also, please design to provide low impedance for the
wiring between the GND and VSS pin of BU7150NUV.
VDD
Power source
Impedance
Speaker
Impedance
GND
Impedance
Fig. 40 Line Impedance
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13/16
2011.05 - Rev.C
Technical Note
BU7150NUV
[How to select external parts for application]
・Power supply capacitor
Power supply capacitor is important for low noise and rejection of alternating current. Please use 10μF electrolytic or
tantalum capacitor for low frequency and 0.1μF ceramic capacitor for high frequency nearer to BU7150NUV.
・BYPASS pin capacitor
BU7150NUV sweeps “Active” state after 70msec wait time after IN1 voltage = VDD/2. IN1 voltage are subordinated
BYPASS voltage Ts. BYPASS voltage is subordinated BYPASS pin capacitor CBYPASS. Therefore, High speed turn on time
is possible if CBYPASS is small value. But, pop noise may occur during turn on time. Therefore, CBYPASS need to be selected
best value for application.
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14/16
2011.05 - Rev.C
Technical Note
BU7150NUV
●Notes for use
(1) Absolute Maximum Ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If
any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical
safety measures including the use of fuses, etc.
(2) Operating conditions
These conditions represent a range within which characteristics can be provided approximately as expected. The
electrical characteristics are guaranteed under the conditions of each parameter.
(3) Reverse connection of power supply connector
The reverse connection of power supply connector can break down ICs. Take protective measures against the
breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s
power supply terminal.
(4) Power supply line
Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this
regard, for the digital block power supply and the analog block power supply, even though these power supplies has
the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus
suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the
wiring patterns. For the GND line, give consideration to design the patterns in a similar manner.
Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal.
At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the
capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus
determining the constant.
(5) GND voltage
Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state.
Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric
transient.
(6) Short circuit between terminals and erroneous mounting
In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting
can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or
between the terminal and the power supply or the GND terminal, the ICs can break down.
(7) Operation in strong electromagnetic field
Be noted that using ICs in the strong electromagnetic field can malfunction them.
(8) Inspection with set PCB
On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress.
Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set
PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to
the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In
addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention
to the transportation and the storage of the set PCB.
(9) Input terminals
In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the
parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of
the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input
terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not
apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power
supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the
guaranteed value of electrical characteristics.
(10) Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of
the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
(11) External capacitor
In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a
degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.
(12) About the rush current
For ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal
powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring,
width of GND wiring, and routing of wiring.
(13) Others
In case of use this LSI, please peruse some other detail documents, we called ,Technical note, Functional description,
Application note.
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© 2011 ROHM Co., Ltd. All rights reserved.
15/16
2011.05 - Rev.C
Technical Note
BU7150NUV
●Ordering part number
B
D
7
Part No.
1
5
0
N
Part No.
U
V
-
Package
NUV : VSON010V3030
E
2
Packaging and forming specification
E2: Embossed tape and reel
VSON010V3030
<Tape and Reel information>
3.0±0.1
3.0±0.1
0.08 S
S
Embossed carrier tape
Quantity
3000pcs
Direction
of feed
(0.22)
+0.03
0.02 -0.02
1.0MAX
1PIN MARK
Tape
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
2.0±0.1
0.5
1
5
10
6
1.2±0.1
0.4±0.1
0.5
C0.25
+0.05
0.25 -0.04
1pin
(Unit : mm)
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© 2011 ROHM Co., Ltd. All rights reserved.
Reel
16/16
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
2011.05 - Rev.C
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
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R1120A
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