SAVANTIC MJF122 Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
MJF122
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
·Complement to type MJF127
APPLICATIONS
·Designed for general–purpose amplifier
and switching applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current-DC
5
A
ICM
Collector current-Pulse
8
A
IB
Base current-DC
120
mA
PC
Collector power dissipation
TC=25
30
Ta=25
2
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
MJF122
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A, IB=0
VCE(sat)-1
Collector-emitter saturation voltage
IC=3A ,IB=12mA
2.0
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=5A ,IB=20mA
3.5
V
VBE
Base-emitter on voltage
IC=3.0A ; VCE=3V
2.5
V
ICBO
Collector cut-off current
VCB=100V, IE=0
10
µA
ICEO
Collector cut-off current
VCE=50V, IB=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
2.0
mA
hFE-1
DC current gain
IC=0.5A ; VCE=3V
1000
hFE-2
DC current gain
IC=3.0A ; VCE=3V
2000
COB
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
200
pF
2
MIN
TYP.
MAX
100
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
MJF122
Similar pages