MOTOROLA MPSA56 Amplifier transistor Datasheet

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by MPSA05/D
SEMICONDUCTOR TECHNICAL DATA
COLLECTOR
3
COLLECTOR
3
2
BASE
2
BASE
NPN
PNP
1
EMITTER
1
EMITTER
Voltage and current are negative
for PNP transistors
MAXIMUM RATINGS
Symbol
MPSA05
MPSA55
MPSA06
MPSA56
Unit
Collector – Emitter Voltage
VCEO
60
80
Vdc
Collector – Base Voltage
VCBO
60
80
Vdc
Emitter – Base Voltage
Rating
*Motorola Preferred Device
VEBO
4.0
Vdc
Collector Current – Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
Max
Unit
RqJA(1)
200
°C/W
RqJC
83.3
°C/W
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
60
80
—
—
V(BR)EBO
4.0
—
Vdc
ICES
—
0.1
µAdc
—
—
0.1
0.1
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MPSA05, MPSA55
MPSA06, MPSA56
Emitter – Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Vdc
µAdc
ICBO
MPSA05, MPSA55
MPSA06, MPSA56
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
300 ms, Duty Cycle
2.0%.
v
v
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
100
100
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
—
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
—
0.25
Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.2
Vdc
MPSA05
MPSA06
100
—
MPSA55
MPSA56
50
—
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(3)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
fT
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)
MHz
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURN–ON TIME
TURN–OFF TIME
VCC
–1.0 V
VCC
+40 V
+VBB
+40 V
5.0 ms
100
RL
100
OUTPUT
+10 V
Vin
tr = 3.0 ns
OUTPUT
RB
Vin
0
* CS
5.0 mF
RL
t 6.0 pF
RB
* CS
5.0 mF
100
t 6.0 pF
100
5.0 ms
tr = 3.0 ns
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP
300
VCE = 2.0 V
TJ = 25°C
200
100
70
50
30
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
NPN
30
20
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–200
100
TJ = 25°C
TJ = 25°C
70
C, CAPACITANCE (pF)
50
Cibo
20
10
8.0
Cobo
4.0
0.1
0.2
0.5
1.0
2.0
5.0
10
50
20
Cibo
30
20
Cobo
10
7.0
5.0
–0.1 –0.2
100
–0.5 –1.0
–2.0
–5.0
–10 –20
–50 –100
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. MPSA05/06 Capacitance
Figure 5. MPSA55/56 Capacitance
1.0 k
700
500
1.0 k
700
500
ts
300
200
100
70
50
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
5.0 7.0 10
200
100
70
50
30
tr
20
td @ VBE(off) = 0.5 V
20
30
50
70 100
200 300
ts
300
t, TIME (ns)
C, CAPACITANCE (pF)
50
Figure 3. MPSA55/56 Current–Gain —
Bandwidth Product
6.0
t, TIME (ns)
70
Figure 2. MPSA05/06 Current–Gain —
Bandwidth Product
40
10
100
IC, COLLECTOR CURRENT (mA)
60
20
VCE = –2.0 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
80
30
200
500
tf
VCC = –40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
–5.0 –7.0 –10
td @ VBE(off) = –0.5 V
–20 –30
–50 –70 –100
tr
–200 –300
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. MPSA05/06 Switching Time
Figure 7. MPSA55/56 Switching Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–500
3
PNP
1.0 k
700
500
–1.0 k
–700
–500
100 ms
1.0 ms
300
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
NPN
–300
1.0 s
TC = 25°C
200
20
MPSA05
10
1.0
2.0
3.0
5.0 7.0 10
TA = 25°C
–100
–70
–50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
1.0 s
TC = 25°C
–200
TA = 25°C
100
70
50
100 ms
1.0 ms
MPSA06
20
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–30
–20
MPSA55
–10
50
30
70 100
–1.0
–2.0 –3.0
–5.0 –7.0 –10
MPSA56
–20 –30
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. MPSA05/06 Active–Region Safe
Operating Area
Figure 9. MPSA55/56 Active–Region Safe
Operating Area
400
400
TJ = 125°C
TJ = 125°C
VCE = –1.0 V
25°C
–55°C
100
80
60
1.0
1.0
2.0 3.0 5.0
10
20 30
50
100
200
25°C
–55°C
100
80
60
40
–0.5 –1.0 –2.0
200 300 500
–50
–100 –200
Figure 10. MPSA05/06 DC Current Gain
Figure 11. MPSA55/56 DC Current Gain
–1.0
TJ = 25°C
VBE(on) @ VCE = 1.0 V
0.4
–500
TJ = 25°C
–0.8
VBE(sat) @ IC/IB = 10
0.2
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
4
–20
IC, COLLECTOR CURRENT (mA)
0.6
0
0.5
–5.0 –10
IC, COLLECTOR CURRENT (mA)
0.8
V, VOLTAGE (VOLTS)
h FE, DC CURRENT GAIN
200
V, VOLTAGE (VOLTS)
h FE , DC CURRENT GAIN
VCE = 1.0 V
40
0.5
–50 –70 –100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
2.0
5.0
VCE(sat) @ IC/IB = 10
10
20
50
100
200
500
0
–0.5
–1.0 –2.0
–5.0
–10
–20
–50
–100 –200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 12. MPSA05/06 “ON” Voltages
Figure 13. MPSA55/56 “ON” Voltages
–500
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1.0
TJ = 25°C
0.8
IC =
250 mA
IC =
100 mA
IC =
50 mA
IC =
500 mA
0.6
0.4
IC =
10 mA
0.2
0
0.05
0.1
0.2
0.5
2.0
1.0
5.0
10
20
50
–0.8
IC =
–250 mA
IC =
–100 mA
IC =
–50 mA
IC =
–500 mA
–0.6
–0.4
IC =
–10 mA
–0.2
0
–0.05 –0.1 –0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
Figure 14. MPSA05/06 Collector Saturation
Region
Figure 15. MPSA55/56 Collector Saturation
Region
R qVB , TEMPERATURE COEFFICIENT (mV/° C)
–1.6
RqVB for VBE
–2.0
–2.4
–2.8
0.5
1.0
2.0
5.0
10
20
50
100
200
500
–50
–0.8
–1.2
–1.6
RqVB for VBE
–2.0
–2.4
–2.8
–0.5 –1.0 –2.0
–5.0
–10
–20
–50
–100 –200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 16. MPSA05/06 Base–Emitter
Temperature Coefficient
Figure 17. MPSA55/56 Base–Emitter
Temperature Coefficient
–500
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
TJ = 25°C
IB, BASE CURRENT (mA)
–1.2
1.0
0.7
0.5
–1.0
IC, COLLECTOR CURRENT (mA)
–0.8
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
R qVB , TEMPERATURE COEFFICIENT (mV/° C)
PNP
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
NPN
0.02
SINGLE PULSE
ZθJC(t) = r(t) • RθJC
TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
(SEE AN469)
P(pk)
0.01
t1
SINGLE PULSE
0.03
t2
0.02
DUTY CYCLE, D = t1/t2
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
t, TIME (ms)
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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6
◊
*MPSA05/D*
MPSA05/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
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